消除边缘区效应的“三脉冲DLTS”法及对DX-中心俘获过程的测量
Chin. J. Semicond. 1990, 11(1): 1
Chin. J. Semicond. 1990, 11(1): 7
测定离子注入单晶损伤与应变的双晶(n~v,-n~v)排列方法
Chin. J. Semicond. 1990, 11(1): 14
Chin. J. Semicond. 1990, 11(1): 20
Chin. J. Semicond. 1990, 11(1): 28
Chin. J. Semicond. 1990, 11(1): 35
Chin. J. Semicond. 1990, 11(1): 42
Chin. J. Semicond. 1990, 11(1): 48
Chin. J. Semicond. 1990, 11(1): 55
Chin. J. Semicond. 1990, 11(1): 63
流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性
Chin. J. Semicond. 1990, 11(1): 68
GaAs/Al_xGa_(1-x)As超晶格中的纵光学声子模
Chin. J. Semicond. 1990, 11(1): 72
Chin. J. Semicond. 1990, 11(1): 77