Chin. J. Semicond. 1990, 11(10): 727
Chin. J. Semicond. 1990, 11(10): 733
Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究
Chin. J. Semicond. 1990, 11(10): 738
液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究
Chin. J. Semicond. 1990, 11(10): 746
Chin. J. Semicond. 1990, 11(10): 751
Chin. J. Semicond. 1990, 11(10): 759
Chin. J. Semicond. 1990, 11(10): 768
InGaAs/InGaAsP/InP SAGM-APD器件设计考虑及I_P—V曲线二级阶梯状扭折
Chin. J. Semicond. 1990, 11(10): 773
Chin. J. Semicond. 1990, 11(10): 780
Chin. J. Semicond. 1990, 11(10): 786
InGaAsP/InP CCTS双稳态激光器的纵模及偏振特性
Chin. J. Semicond. 1990, 11(10): 790
空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器
Chin. J. Semicond. 1990, 11(10): 795
Chin. J. Semicond. 1990, 11(10): 799
Chin. J. Semicond. 1990, 11(10): 804