Chin. J. Semicond. 1991, 12(11): 649
Chin. J. Semicond. 1991, 12(11): 657
Chin. J. Semicond. 1991, 12(11): 666
Chin. J. Semicond. 1991, 12(11): 673
Chin. J. Semicond. 1991, 12(11): 679
Chin. J. Semicond. 1991, 12(11): 686
Chin. J. Semicond. 1991, 12(11): 695
Chin. J. Semicond. 1991, 12(11): 700
nμc-Si:H/SiO_x/Ag隧道背面接触对a-Si:H太阳能电池性能的影响
Chin. J. Semicond. 1991, 12(11): 705
Chin. J. Semicond. 1991, 12(11): 709