Journal of Semiconductors

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Volume 15, Issue 7, Jul 1994

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CONTENTS

利用STM观察Si（100）微斜面的表面结构

张兆祥，井藤浩志，市川竹男

Chin. J. Semicond. 1994, 15(7): 439-443

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 439.

张兆祥，井藤浩志，市川竹男. 利用STM观察Si（100）微斜面的表面结构[J]. Chin. J. Semicond., 1994, 15(7): 439..Export: BibTex EndNote

张兆祥，井藤浩志，市川竹男. 利用STM观察Si（100）微斜面的表面结构[J]. Chin. J. Semicond., 1994, 15(7): 439...

低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光

俞容文，郑健生，糜东林，颜炳章

Chin. J. Semicond. 1994, 15(7): 444-449

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 444.

俞容文，郑健生，糜东林，颜炳章. 低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光[J]. Chin. J. Semicond., 1994, 15(7): 444..Export: BibTex EndNote

俞容文，郑健生，糜东林，颜炳章. 低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光[J]. Chin. J. Semicond., 1994, 15(7): 444...

PECVDSi_3N_4钝化膜对GaAsMESFET直流特性的影响

宫俊

Chin. J. Semicond. 1994, 15(7): 450-454

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 450.

宫俊. PECVDSi_3N_4钝化膜对GaAsMESFET直流特性的影响[J]. Chin. J. Semicond., 1994, 15(7): 450..Export: BibTex EndNote

宫俊. PECVDSi_3N_4钝化膜对GaAsMESFET直流特性的影响[J]. Chin. J. Semicond., 1994, 15(7): 450...

GaAs／GaAlAs双异质结光波导开关内带隙的注入载流子感生变化

王德煌，王威礼，庄婉如，林雯华

Chin. J. Semicond. 1994, 15(7): 455-459

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 455.

王德煌，王威礼，庄婉如，林雯华. GaAs／GaAlAs双异质结光波导开关内带隙的注入载流子感生变化[J]. Chin. J. Semicond., 1994, 15(7): 455..Export: BibTex EndNote

王德煌，王威礼，庄婉如，林雯华. GaAs／GaAlAs双异质结光波导开关内带隙的注入载流子感生变化[J]. Chin. J. Semicond., 1994, 15(7): 455...

砷化镓声电荷输运的二维互作用模型

邹英寅

Chin. J. Semicond. 1994, 15(7): 460-464

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 460.

邹英寅. 砷化镓声电荷输运的二维互作用模型[J]. Chin. J. Semicond., 1994, 15(7): 460..Export: BibTex EndNote

邹英寅. 砷化镓声电荷输运的二维互作用模型[J]. Chin. J. Semicond., 1994, 15(7): 460...

一个集成光波导器件计算机辅助分析系统及其应用

陈维友，刘式墉

Chin. J. Semicond. 1994, 15(7): 465-469

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 465.

陈维友，刘式墉. 一个集成光波导器件计算机辅助分析系统及其应用[J]. Chin. J. Semicond., 1994, 15(7): 465..Export: BibTex EndNote

陈维友，刘式墉. 一个集成光波导器件计算机辅助分析系统及其应用[J]. Chin. J. Semicond., 1994, 15(7): 465...

快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究

冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平

Chin. J. Semicond. 1994, 15(7): 470-477

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 470.

冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平. 快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究[J]. Chin. J. Semicond., 1994, 15(7): 470..Export: BibTex EndNote

冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平. 快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究[J]. Chin. J. Semicond., 1994, 15(7): 470...

适于半导体器件模拟的改进Gummel算法

曹俊诚，郑茳，魏同立，樊继山

Chin. J. Semicond. 1994, 15(7): 478-481

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 478.

曹俊诚，郑茳，魏同立，樊继山. 适于半导体器件模拟的改进Gummel算法[J]. Chin. J. Semicond., 1994, 15(7): 478..Export: BibTex EndNote

曹俊诚，郑茳，魏同立，樊继山. 适于半导体器件模拟的改进Gummel算法[J]. Chin. J. Semicond., 1994, 15(7): 478...

高温注入离子的扩散和激活行为的研究

俞跃辉，邹世昌

Chin. J. Semicond. 1994, 15(7): 482-487

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 482.

俞跃辉，邹世昌. 高温注入离子的扩散和激活行为的研究[J]. Chin. J. Semicond., 1994, 15(7): 482..Export: BibTex EndNote

俞跃辉，邹世昌. 高温注入离子的扩散和激活行为的研究[J]. Chin. J. Semicond., 1994, 15(7): 482...

中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制

赵善麒，高鼎三，王正元

Chin. J. Semicond. 1994, 15(7): 488-495

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 488.

赵善麒，高鼎三，王正元. 中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制[J]. Chin. J. Semicond., 1994, 15(7): 488..Export: BibTex EndNote

赵善麒，高鼎三，王正元. 中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制[J]. Chin. J. Semicond., 1994, 15(7): 488...

硅／多孔硅异质结光生电压谱研究

阎锋，鲍希茂

Chin. J. Semicond. 1994, 15(7): 496-500

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(7): 496.

阎锋，鲍希茂. 硅／多孔硅异质结光生电压谱研究[J]. Chin. J. Semicond., 1994, 15(7): 496..Export: BibTex EndNote

阎锋，鲍希茂. 硅／多孔硅异质结光生电压谱研究[J]. Chin. J. Semicond., 1994, 15(7): 496...

高迁移率Si／Si_0.7Ge_0.3／Si调制掺杂异质结构的生长和输运性质

江若琏，刘建林，李海峰，郑厚植

Chin. J. Semicond. 1994, 15(7): 501-504

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(7): 501.

江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si_（0．7）Ge_（0．3）／Si调制掺杂异质结构的生长和输运性质[J]. Chin. J. Semicond., 1994, 15(7): 501..Export: BibTex EndNote

江若琏，刘建林，李海峰，郑厚植. 高迁移率Si／Si_（0．7）Ge_（0．3）／Si调制掺杂异质结构的生长和输运性质[J]. Chin. J. Semicond., 1994, 15(7): 501...

GaAs表面钝化的新方法：S₂Cl₂处理

李喆深，蔡卫中，苏润洲，侯晓远，董国胜，金晓峰，丁训民，王迅

Chin. J. Semicond. 1994, 15(7): 505-510

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(7): 505.

李喆深，蔡卫中，苏润洲，侯晓远，董国胜，金晓峰，丁训民，王迅. GaAs表面钝化的新方法：S_2Cl_2处理[J]. Chin. J. Semicond., 1994, 15(7): 505..Export: BibTex EndNote

李喆深，蔡卫中，苏润洲，侯晓远，董国胜，金晓峰，丁训民，王迅. GaAs表面钝化的新方法：S_2Cl_2处理[J]. Chin. J. Semicond., 1994, 15(7): 505...

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