Journal of Semiconductors

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Volume 16, Issue 10, Oct 1995

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CONTENTS

InGaAs／InP超晶格材料的GSMBE生长研究

孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵

Chin. J. Semicond. 1995, 16(10): 725-729

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 725.

孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵. InGaAs／InP超晶格材料的GSMBE生长研究[J]. Chin. J. Semicond., 1995, 16(10): 725..Export: BibTex EndNote

孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵. InGaAs／InP超晶格材料的GSMBE生长研究[J]. Chin. J. Semicond., 1995, 16(10): 725...

短周期GaAs／AlAs超晶格的光频介电函数谱理论的实验检验

莫党，谭健华，陈宗圭，杨小平，张鹏华，张伟，陈良尧

Chin. J. Semicond. 1995, 16(10): 730-735

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 730.

莫党，谭健华，陈宗圭，杨小平，张鹏华，张伟，陈良尧. 短周期GaAs／AlAs超晶格的光频介电函数谱理论的实验检验[J]. Chin. J. Semicond., 1995, 16(10): 730..Export: BibTex EndNote

莫党，谭健华，陈宗圭，杨小平，张鹏华，张伟，陈良尧. 短周期GaAs／AlAs超晶格的光频介电函数谱理论的实验检验[J]. Chin. J. Semicond., 1995, 16(10): 730...

定域再结晶SOI的透射电镜研究

刘安生，邵贝羚，李永洪，刘峥，张鹏飞，钱佩信

Chin. J. Semicond. 1995, 16(10): 736-740

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 736.

刘安生，邵贝羚，李永洪，刘峥，张鹏飞，钱佩信. 定域再结晶SOI的透射电镜研究[J]. Chin. J. Semicond., 1995, 16(10): 736..Export: BibTex EndNote

刘安生，邵贝羚，李永洪，刘峥，张鹏飞，钱佩信. 定域再结晶SOI的透射电镜研究[J]. Chin. J. Semicond., 1995, 16(10): 736...

高效AlxGa_（1—x）As／GaAs太阳电池的研制及辐照效应

李标，向贤碧，游志朴，许颖，费雪英

Chin. J. Semicond. 1995, 16(10): 741-746

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 741.

李标，向贤碧，游志朴，许颖，费雪英. 高效AlxGa_（1—x）As／GaAs太阳电池的研制及辐照效应[J]. Chin. J. Semicond., 1995, 16(10): 741..Export: BibTex EndNote

李标，向贤碧，游志朴，许颖，费雪英. 高效AlxGa_（1—x）As／GaAs太阳电池的研制及辐照效应[J]. Chin. J. Semicond., 1995, 16(10): 741...

GaAs中氧的SIMS相对灵敏度因子的测定

陈春华，陈新，王佑祥，姜志雄

Chin. J. Semicond. 1995, 16(10): 747-753

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 747.

陈春华，陈新，王佑祥，姜志雄. GaAs中氧的SIMS相对灵敏度因子的测定[J]. Chin. J. Semicond., 1995, 16(10): 747..Export: BibTex EndNote

陈春华，陈新，王佑祥，姜志雄. GaAs中氧的SIMS相对灵敏度因子的测定[J]. Chin. J. Semicond., 1995, 16(10): 747...

收集区局部掺杂的硅双极晶体管的二维数值分析

林绪伦

Chin. J. Semicond. 1995, 16(10): 754-758

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 754.

林绪伦. 收集区局部掺杂的硅双极晶体管的二维数值分析[J]. Chin. J. Semicond., 1995, 16(10): 754..Export: BibTex EndNote

林绪伦. 收集区局部掺杂的硅双极晶体管的二维数值分析[J]. Chin. J. Semicond., 1995, 16(10): 754...

高能离子注入硅中自由载流子的等离子效应的光学响应研究

俞跃辉，邹世昌，周筑颖，赵国庆

Chin. J. Semicond. 1995, 16(10): 759-765

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 759.

俞跃辉，邹世昌，周筑颖，赵国庆. 高能离子注入硅中自由载流子的等离子效应的光学响应研究[J]. Chin. J. Semicond., 1995, 16(10): 759..Export: BibTex EndNote

俞跃辉，邹世昌，周筑颖，赵国庆. 高能离子注入硅中自由载流子的等离子效应的光学响应研究[J]. Chin. J. Semicond., 1995, 16(10): 759...

硼离子注入半绝缘InP和N型InP的电特性研究

赵杰，刘宝钧，李建蒙

Chin. J. Semicond. 1995, 16(10): 766-771

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 766.

赵杰，刘宝钧，李建蒙. 硼离子注入半绝缘InP和N型InP的电特性研究[J]. Chin. J. Semicond., 1995, 16(10): 766..Export: BibTex EndNote

赵杰，刘宝钧，李建蒙. 硼离子注入半绝缘InP和N型InP的电特性研究[J]. Chin. J. Semicond., 1995, 16(10): 766...

多能MeV硼离子注入单晶硅形成特殊形状载流子分布

康一秀，赵渭江，王宇钢，张利春，虞福春

Chin. J. Semicond. 1995, 16(10): 772-778

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 772.

康一秀，赵渭江，王宇钢，张利春，虞福春. 多能MeV硼离子注入单晶硅形成特殊形状载流子分布[J]. Chin. J. Semicond., 1995, 16(10): 772..Export: BibTex EndNote

康一秀，赵渭江，王宇钢，张利春，虞福春. 多能MeV硼离子注入单晶硅形成特殊形状载流子分布[J]. Chin. J. Semicond., 1995, 16(10): 772...

用射频偏压溅射制备的具有快速紫外光响应的ZnO薄膜

张德恒

Chin. J. Semicond. 1995, 16(10): 779-782

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 779.

张德恒. 用射频偏压溅射制备的具有快速紫外光响应的ZnO薄膜[J]. Chin. J. Semicond., 1995, 16(10): 779..Export: BibTex EndNote

张德恒. 用射频偏压溅射制备的具有快速紫外光响应的ZnO薄膜[J]. Chin. J. Semicond., 1995, 16(10): 779...

硼掺杂及未掺杂金刚石薄膜的电学和光电导特性

张仿清，张文军，胡博，谢二庆，陈光华

Chin. J. Semicond. 1995, 16(10): 783-788

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 783.

张仿清，张文军，胡博，谢二庆，陈光华. 硼掺杂及未掺杂金刚石薄膜的电学和光电导特性[J]. Chin. J. Semicond., 1995, 16(10): 783..Export: BibTex EndNote

张仿清，张文军，胡博，谢二庆，陈光华. 硼掺杂及未掺杂金刚石薄膜的电学和光电导特性[J]. Chin. J. Semicond., 1995, 16(10): 783...

直拉硅单晶中热施主的快速热退除

栾洪发，张果虎，李兵，陈学清，秦福，钱佩信

Chin. J. Semicond. 1995, 16(10): 789-793

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 789.

栾洪发，张果虎，李兵，陈学清，秦福，钱佩信. 直拉硅单晶中热施主的快速热退除[J]. Chin. J. Semicond., 1995, 16(10): 789..Export: BibTex EndNote

栾洪发，张果虎，李兵，陈学清，秦福，钱佩信. 直拉硅单晶中热施主的快速热退除[J]. Chin. J. Semicond., 1995, 16(10): 789...

退火条件对β—FeSi_2形成的影响

陈向东，王连卫，林贤，林成鲁，邹世昌

Chin. J. Semicond. 1995, 16(10): 794-797

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 794.

陈向东，王连卫，林贤，林成鲁，邹世昌. 退火条件对β—FeSi_2形成的影响[J]. Chin. J. Semicond., 1995, 16(10): 794..Export: BibTex EndNote

陈向东，王连卫，林贤，林成鲁，邹世昌. 退火条件对β—FeSi_2形成的影响[J]. Chin. J. Semicond., 1995, 16(10): 794...

SiO_2全封闭的硅量子线列阵

施毅，刘建林，汪峰，张荣，韩平，余是东，张学渊，顾书林，胡立群，茅保华，郑有

Chin. J. Semicond. 1995, 16(10): 798-800

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 798.

施毅，刘建林，汪峰，张荣，韩平，余是东，张学渊，顾书林，胡立群，茅保华，郑有. SiO_2全封闭的硅量子线列阵[J]. Chin. J. Semicond., 1995, 16(10): 798..Export: BibTex EndNote

施毅，刘建林，汪峰，张荣，韩平，余是东，张学渊，顾书林，胡立群，茅保华，郑有. SiO_2全封闭的硅量子线列阵[J]. Chin. J. Semicond., 1995, 16(10): 798...

固体C_（70）／P型Si接触的电学性质

陈开茅，贾勇强，吴克，金泗轩，李传义，周锡煌，顾镇南

Chin. J. Semicond. 1995, 16(10): 801-804

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(10): 801.

陈开茅，贾勇强，吴克，金泗轩，李传义，周锡煌，顾镇南. 固体C_（70）／P型Si接触的电学性质[J]. Chin. J. Semicond., 1995, 16(10): 801..Export: BibTex EndNote

陈开茅，贾勇强，吴克，金泗轩，李传义，周锡煌，顾镇南. 固体C_（70）／P型Si接触的电学性质[J]. Chin. J. Semicond., 1995, 16(10): 801...

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