Journal of Semiconductors

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Volume 16, Issue 6, Jun 1995

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CONTENTS

超晶格微带电子态随电场演化过程的电解液电反射谱研究

刘伟，江德生，张耀辉，王若桢

Chin. J. Semicond. 1995, 16(6): 401-406

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 401.

刘伟，江德生，张耀辉，王若桢. 超晶格微带电子态随电场演化过程的电解液电反射谱研究[J]. Chin. J. Semicond., 1995, 16(6): 401..Export: BibTex EndNote

刘伟，江德生，张耀辉，王若桢. 超晶格微带电子态随电场演化过程的电解液电反射谱研究[J]. Chin. J. Semicond., 1995, 16(6): 401...

P－型HgCdTe MIS结构反型层激发态子能带结构研究

刘坤，褚君浩，李标，汤定元

Chin. J. Semicond. 1995, 16(6): 407-412

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 407.

刘坤，褚君浩，李标，汤定元. P－型HgCdTe MIS结构反型层激发态子能带结构研究[J]. Chin. J. Semicond., 1995, 16(6): 407..Export: BibTex EndNote

刘坤，褚君浩，李标，汤定元. P－型HgCdTe MIS结构反型层激发态子能带结构研究[J]. Chin. J. Semicond., 1995, 16(6): 407...

MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系

陆大成，段树坤

Chin. J. Semicond. 1995, 16(6): 413-420

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 413.

陆大成，段树坤. MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系[J]. Chin. J. Semicond., 1995, 16(6): 413..Export: BibTex EndNote

陆大成，段树坤. MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系[J]. Chin. J. Semicond., 1995, 16(6): 413...

分布反馈式半导体激光器／电吸收型调制器单片光子集成器件的理论分析

司伟民，罗毅，李德杰，张克潜，孙长征

Chin. J. Semicond. 1995, 16(6): 421-427

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 421.

司伟民，罗毅，李德杰，张克潜，孙长征. 分布反馈式半导体激光器／电吸收型调制器单片光子集成器件的理论分析[J]. Chin. J. Semicond., 1995, 16(6): 421..Export: BibTex EndNote

司伟民，罗毅，李德杰，张克潜，孙长征. 分布反馈式半导体激光器／电吸收型调制器单片光子集成器件的理论分析[J]. Chin. J. Semicond., 1995, 16(6): 421...

植入式程控生理型（DDD）心脏起搏器中程控解码器的设计和集成

陈群伟，洪志良

Chin. J. Semicond. 1995, 16(6): 428-433

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 428.

陈群伟，洪志良. 植入式程控生理型（DDD）心脏起搏器中程控解码器的设计和集成[J]. Chin. J. Semicond., 1995, 16(6): 428..Export: BibTex EndNote

陈群伟，洪志良. 植入式程控生理型（DDD）心脏起搏器中程控解码器的设计和集成[J]. Chin. J. Semicond., 1995, 16(6): 428...

MBE－GaAs／Si材料晶体质量对少子扩散长度的影响

胡雨生，汪乐

Chin. J. Semicond. 1995, 16(6): 434-438

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 434.

胡雨生，汪乐. MBE－GaAs／Si材料晶体质量对少子扩散长度的影响[J]. Chin. J. Semicond., 1995, 16(6): 434..Export: BibTex EndNote

胡雨生，汪乐. MBE－GaAs／Si材料晶体质量对少子扩散长度的影响[J]. Chin. J. Semicond., 1995, 16(6): 434...

非晶硅X－射线探测阵列的研究

郑怀德，廖显伯，孔光临，刁宏伟，万旭东，夏传钺，潘广勒，肖君

Chin. J. Semicond. 1995, 16(6): 439-442

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 439.

郑怀德，廖显伯，孔光临，刁宏伟，万旭东，夏传钺，潘广勒，肖君. 非晶硅X－射线探测阵列的研究[J]. Chin. J. Semicond., 1995, 16(6): 439..Export: BibTex EndNote

郑怀德，廖显伯，孔光临，刁宏伟，万旭东，夏传钺，潘广勒，肖君. 非晶硅X－射线探测阵列的研究[J]. Chin. J. Semicond., 1995, 16(6): 439...

多晶硅发射区晶体管的解析模型

马平西，张利春，赵宝瑛，王阳元

Chin. J. Semicond. 1995, 16(6): 443-451

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 443.

马平西，张利春，赵宝瑛，王阳元. 多晶硅发射区晶体管的解析模型[J]. Chin. J. Semicond., 1995, 16(6): 443..Export: BibTex EndNote

马平西，张利春，赵宝瑛，王阳元. 多晶硅发射区晶体管的解析模型[J]. Chin. J. Semicond., 1995, 16(6): 443...

一种全对称高分辨精度的多端电流型MAX门和MIN门电路

李斌桥，李志坚，石秉学

Chin. J. Semicond. 1995, 16(6): 452-457

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 452.

李斌桥，李志坚，石秉学. 一种全对称高分辨精度的多端电流型MAX门和MIN门电路[J]. Chin. J. Semicond., 1995, 16(6): 452..Export: BibTex EndNote

李斌桥，李志坚，石秉学. 一种全对称高分辨精度的多端电流型MAX门和MIN门电路[J]. Chin. J. Semicond., 1995, 16(6): 452...

数据流图的优化：时序重构和结合关系重构

王以峰，洪先龙，徐葭生

Chin. J. Semicond. 1995, 16(6): 458-467

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 458.

王以峰，洪先龙，徐葭生. 数据流图的优化：时序重构和结合关系重构[J]. Chin. J. Semicond., 1995, 16(6): 458..Export: BibTex EndNote

王以峰，洪先龙，徐葭生. 数据流图的优化：时序重构和结合关系重构[J]. Chin. J. Semicond., 1995, 16(6): 458...

硼掺杂半导体金刚石薄膜的合成与红外吸收特性

张仿清，谢二庆，杨斌，才永明，陈光华

Chin. J. Semicond. 1995, 16(6): 468-472

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 468.

张仿清，谢二庆，杨斌，才永明，陈光华. 硼掺杂半导体金刚石薄膜的合成与红外吸收特性[J]. Chin. J. Semicond., 1995, 16(6): 468..Export: BibTex EndNote

张仿清，谢二庆，杨斌，才永明，陈光华. 硼掺杂半导体金刚石薄膜的合成与红外吸收特性[J]. Chin. J. Semicond., 1995, 16(6): 468...

杂质锗对CZ－Si性能的影响

张维连，刘彩池，王志军，冀志江

Chin. J. Semicond. 1995, 16(6): 473-476

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 473.

张维连，刘彩池，王志军，冀志江. 杂质锗对CZ－Si性能的影响[J]. Chin. J. Semicond., 1995, 16(6): 473..Export: BibTex EndNote

张维连，刘彩池，王志军，冀志江. 杂质锗对CZ－Si性能的影响[J]. Chin. J. Semicond., 1995, 16(6): 473...

光致发光纳米晶粒硅薄膜的电子自旋共振研究

刘湘娜，王路春，佟嵩，鲍希茂，眭云霞，韩世莹，金通政

Chin. J. Semicond. 1995, 16(6): 477-480

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(6): 477.

刘湘娜，王路春，佟嵩，鲍希茂，眭云霞，韩世莹，金通政. 光致发光纳米晶粒硅薄膜的电子自旋共振研究[J]. Chin. J. Semicond., 1995, 16(6): 477..Export: BibTex EndNote

刘湘娜，王路春，佟嵩，鲍希茂，眭云霞，韩世莹，金通政. 光致发光纳米晶粒硅薄膜的电子自旋共振研究[J]. Chin. J. Semicond., 1995, 16(6): 477...

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