Journal of Semiconductors

2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Authors
About the Journal
Editorial Board

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

|

Issue Browser

Volume 16, Issue 9, Sep 1995

Table of Content

Select articles

CONTENTS

多孔硅中的新量子限制态和PL光谱

薛舫时

Chin. J. Semicond. 1995, 16(9): 641-648

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 641.

薛舫时. 多孔硅中的新量子限制态和PL光谱[J]. Chin. J. Semicond., 1995, 16(9): 641..Export: BibTex EndNote

薛舫时. 多孔硅中的新量子限制态和PL光谱[J]. Chin. J. Semicond., 1995, 16(9): 641...

半导体光放大器相位补偿特性的研究

金韬，黄德修，丘军林

Chin. J. Semicond. 1995, 16(9): 649-654

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 649.

金韬，黄德修，丘军林. 半导体光放大器相位补偿特性的研究[J]. Chin. J. Semicond., 1995, 16(9): 649..Export: BibTex EndNote

金韬，黄德修，丘军林. 半导体光放大器相位补偿特性的研究[J]. Chin. J. Semicond., 1995, 16(9): 649...

量子阱激光器光增益温度关系及对激射特性的影响

张敬明，徐遵图，杨国文，郑婉华，钱毅，李世祖，肖建伟，徐俊英，陈良惠

Chin. J. Semicond. 1995, 16(9): 655-658

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 655.

张敬明，徐遵图，杨国文，郑婉华，钱毅，李世祖，肖建伟，徐俊英，陈良惠. 量子阱激光器光增益温度关系及对激射特性的影响[J]. Chin. J. Semicond., 1995, 16(9): 655..Export: BibTex EndNote

张敬明，徐遵图，杨国文，郑婉华，钱毅，李世祖，肖建伟，徐俊英，陈良惠. 量子阱激光器光增益温度关系及对激射特性的影响[J]. Chin. J. Semicond., 1995, 16(9): 655...

GaAs／AlGaAs激光器及其列阵电流注入及电子线分布研究

吴小萍，朱祖华

Chin. J. Semicond. 1995, 16(9): 659-662

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 659.

吴小萍，朱祖华. GaAs／AlGaAs激光器及其列阵电流注入及电子线分布研究[J]. Chin. J. Semicond., 1995, 16(9): 659..Export: BibTex EndNote

吴小萍，朱祖华. GaAs／AlGaAs激光器及其列阵电流注入及电子线分布研究[J]. Chin. J. Semicond., 1995, 16(9): 659...

Ge_xSi_（1－x）／Si异质结大截面脊形BOA型光开关的模型分析及设计

赵策洲，刘恩科，高勇

Chin. J. Semicond. 1995, 16(9): 663-668

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 663.

赵策洲，刘恩科，高勇. Ge_xSi_（1－x）／Si异质结大截面脊形BOA型光开关的模型分析及设计[J]. Chin. J. Semicond., 1995, 16(9): 663..Export: BibTex EndNote

赵策洲，刘恩科，高勇. Ge_xSi_（1－x）／Si异质结大截面脊形BOA型光开关的模型分析及设计[J]. Chin. J. Semicond., 1995, 16(9): 663...

CdS／CuInSe_2异质结内建电压测试理论和方法的研究

杨文库，杨宇欣，邓文荣

Chin. J. Semicond. 1995, 16(9): 669-672

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 669.

杨文库，杨宇欣，邓文荣. CdS／CuInSe_2异质结内建电压测试理论和方法的研究[J]. Chin. J. Semicond., 1995, 16(9): 669..Export: BibTex EndNote

杨文库，杨宇欣，邓文荣. CdS／CuInSe_2异质结内建电压测试理论和方法的研究[J]. Chin. J. Semicond., 1995, 16(9): 669...

HgCdTe块晶不完整性的X射线双晶衍射研究

施天生，朱南昌，沈杰，方家熊

Chin. J. Semicond. 1995, 16(9): 673-676

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 673.

施天生，朱南昌，沈杰，方家熊. HgCdTe块晶不完整性的X射线双晶衍射研究[J]. Chin. J. Semicond., 1995, 16(9): 673..Export: BibTex EndNote

施天生，朱南昌，沈杰，方家熊. HgCdTe块晶不完整性的X射线双晶衍射研究[J]. Chin. J. Semicond., 1995, 16(9): 673...

符合法弹性前冲测量重掺锑硅中氧含量

徐岳生，刘彩池，李养贤，朱则韶，王红梅，韦伦存

Chin. J. Semicond. 1995, 16(9): 677-682

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 677.

徐岳生，刘彩池，李养贤，朱则韶，王红梅，韦伦存. 符合法弹性前冲测量重掺锑硅中氧含量[J]. Chin. J. Semicond., 1995, 16(9): 677..Export: BibTex EndNote

徐岳生，刘彩池，李养贤，朱则韶，王红梅，韦伦存. 符合法弹性前冲测量重掺锑硅中氧含量[J]. Chin. J. Semicond., 1995, 16(9): 677...

掺杂聚合物蓝绿发光二极管

唐建国，马於光，刘式墉，沈家骢，田文晶

Chin. J. Semicond. 1995, 16(9): 683-687

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 683.

唐建国，马於光，刘式墉，沈家骢，田文晶. 掺杂聚合物蓝绿发光二极管[J]. Chin. J. Semicond., 1995, 16(9): 683..Export: BibTex EndNote

唐建国，马於光，刘式墉，沈家骢，田文晶. 掺杂聚合物蓝绿发光二极管[J]. Chin. J. Semicond., 1995, 16(9): 683...

小波变换的电路集成

张永梅，徐葭生

Chin. J. Semicond. 1995, 16(9): 688-694

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 688.

张永梅，徐葭生. 小波变换的电路集成[J]. Chin. J. Semicond., 1995, 16(9): 688..Export: BibTex EndNote

张永梅，徐葭生. 小波变换的电路集成[J]. Chin. J. Semicond., 1995, 16(9): 688...

多晶硅栅光刻前后注F对MOS器件辐照特性的影响

张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红

Chin. J. Semicond. 1995, 16(9): 695-699

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 695.

张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红. 多晶硅栅光刻前后注F对MOS器件辐照特性的影响[J]. Chin. J. Semicond., 1995, 16(9): 695..Export: BibTex EndNote

张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红. 多晶硅栅光刻前后注F对MOS器件辐照特性的影响[J]. Chin. J. Semicond., 1995, 16(9): 695...

Si~＋、As~＋双离子注入半绝缘GaAs的研究

王永晨，刘明成，叶维祎，王玉芳，赵杰

Chin. J. Semicond. 1995, 16(9): 700-705

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 700.

王永晨，刘明成，叶维祎，王玉芳，赵杰. Si~＋、As~＋双离子注入半绝缘GaAs的研究[J]. Chin. J. Semicond., 1995, 16(9): 700..Export: BibTex EndNote

王永晨，刘明成，叶维祎，王玉芳，赵杰. Si~＋、As~＋双离子注入半绝缘GaAs的研究[J]. Chin. J. Semicond., 1995, 16(9): 700...

高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究

杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟

Chin. J. Semicond. 1995, 16(9): 706-710

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 706.

杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟. 高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究[J]. Chin. J. Semicond., 1995, 16(9): 706..Export: BibTex EndNote

杨斌，王占国，陈涌海，梁基本，廖奇为，林兰英，朱战萍，徐波，李伟. 高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究[J]. Chin. J. Semicond., 1995, 16(9): 706...

在纵向电场作用下量子阱中空间直接／间接激子的转化

罗克俭，郑厚植，李承芳，徐士杰，张鹏华，张伟，杨小平

Chin. J. Semicond. 1995, 16(9): 711-715

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 711.

罗克俭，郑厚植，李承芳，徐士杰，张鹏华，张伟，杨小平. 在纵向电场作用下量子阱中空间直接／间接激子的转化[J]. Chin. J. Semicond., 1995, 16(9): 711..Export: BibTex EndNote

罗克俭，郑厚植，李承芳，徐士杰，张鹏华，张伟，杨小平. 在纵向电场作用下量子阱中空间直接／间接激子的转化[J]. Chin. J. Semicond., 1995, 16(9): 711...

纳米硅／非晶硅多层膜室温可见光致发光研究

佟嵩，刘湘娜，鲍希茂

Chin. J. Semicond. 1995, 16(9): 716-719

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 716.

佟嵩，刘湘娜，鲍希茂. 纳米硅／非晶硅多层膜室温可见光致发光研究[J]. Chin. J. Semicond., 1995, 16(9): 716..Export: BibTex EndNote

佟嵩，刘湘娜，鲍希茂. 纳米硅／非晶硅多层膜室温可见光致发光研究[J]. Chin. J. Semicond., 1995, 16(9): 716...

GaAs表面的室温光致氮化

徐前江，丁训民，侯晓远

Chin. J. Semicond. 1995, 16(9): 721-724

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(9): 721.

徐前江，丁训民，侯晓远. GaAs表面的室温光致氮化[J]. Chin. J. Semicond., 1995, 16(9): 721..Export: BibTex EndNote

徐前江，丁训民，侯晓远. GaAs表面的室温光致氮化[J]. Chin. J. Semicond., 1995, 16(9): 721...

Search

Advanced Search >>

Issues

2025

Volume 46 lssue 5, May 2025

Volume 46 lssue 4, Apr 2025

Volume 46 lssue 3, Mar 2025

Volume 46 lssue 2, Feb 2025

Volume 46 lssue 1, Jan 2025
2024

Volume 45 lssue 12, Dec 2024

Volume 45 lssue 11, Nov 2024

Volume 45 lssue 10, Oct 2024

Volume 45 lssue 9, Sep 2024

Volume 45 lssue 8, Aug 2024

Volume 45 lssue 7, Jul 2024

Volume 45 lssue 6, Jun 2024

Volume 45 lssue 5, May 2024

Volume 45 lssue 4, Apr 2024

Volume 45 lssue 3, Mar 2024

Volume 45 lssue 2, Feb 2024

Volume 45 lssue 1, Jan 2024
2023

Volume 44 lssue 12, Dec 2023

Volume 44 lssue 11, Nov 2023

Volume 44 lssue 10, Oct 2023

Volume 44 lssue 9, Sep 2023

Volume 44 lssue 8, Aug 2023

Volume 44 lssue 7, Jul 2023

Volume 44 lssue 6, Jun 2023

Volume 44 lssue 5, May 2023

Volume 44 lssue 4, Apr 2023

Volume 44 lssue 3, Mar 2023

Volume 44 lssue 2, Feb 2023

Volume 44 lssue 1, Jan 2023
2022

Volume 43 lssue 12, Dec 2022

Volume 43 lssue 11, Nov 2022

Volume 43 lssue 10, Oct 2022

Volume 43 lssue 9, Sep 2022

Volume 43 lssue 8, Aug 2022

Volume 43 lssue 7, Jul 2022

Volume 43 lssue 6, Jun 2022

Volume 43 lssue 5, May 2022

Volume 43 lssue 4, Apr 2022

Volume 43 lssue 3, Mar 2022

Volume 43 lssue 2, Feb 2022

Volume 43 lssue 1, Jan 2022
2021

Volume 42 lssue 12, Dec 2021

Volume 42 lssue 11, Nov 2021

Volume 42 lssue 10, Oct 2021

Volume 42 lssue 9, Sep 2021

Volume 42 lssue 8, Aug 2021

Volume 42 lssue 7, Jul 2021

Volume 42 lssue 6, Jun 2021

Volume 42 lssue 5, May 2021

Volume 42 lssue 4, Apr 2021

Volume 42 lssue 3, Mar 2021

Volume 42 lssue 2, Feb 2021

Volume 42 lssue 1, Jan 2021

Authors Preparing Your Manuscript Submit Your Manuscript Peer-Review Policy Ethical Policy Copyright and Permissions Word Template EndNote for References
About the Journal About the Journal Scope Advisory Board Editorial Board Contact Information
Link JoS in IOPScience Live Report in KouShare (“半语-益言”直播讲座) ScienceDB PHYSIKE Dyna Sense(鼎信优威)
WeChat ID
Mobile Terminal

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2

Export File

Format

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Content

Citation Only

Citation and Abstract

Citation