Journal of Semiconductors

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Volume 17, Issue 4, Apr 1996

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CONTENTS

P＜100＞Si衬底晶向偏离度对外延埋层图形畸变的影响

李养贤，鞠玉林

Chin. J. Semicond. 1996, 17(4): 241-244

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 241.

李养贤，鞠玉林. P＜100＞Si衬底晶向偏离度对外延埋层图形畸变的影响[J]. Chin. J. Semicond., 1996, 17(4): 241..Export: BibTex EndNote

李养贤，鞠玉林. P＜100＞Si衬底晶向偏离度对外延埋层图形畸变的影响[J]. Chin. J. Semicond., 1996, 17(4): 241...

结区中存在量子阱结构样品的C－V特性分析

陆昉，王勤华，王建宝，蒋家禹，孙恒慧

Chin. J. Semicond. 1996, 17(4): 245-251

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 245.

陆昉，王勤华，王建宝，蒋家禹，孙恒慧. 结区中存在量子阱结构样品的C－V特性分析[J]. Chin. J. Semicond., 1996, 17(4): 245..Export: BibTex EndNote

陆昉，王勤华，王建宝，蒋家禹，孙恒慧. 结区中存在量子阱结构样品的C－V特性分析[J]. Chin. J. Semicond., 1996, 17(4): 245...

MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光

董建荣，陆大成，汪度，王晓晖，刘祥林，王占国

Chin. J. Semicond. 1996, 17(4): 252-256

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 252.

董建荣，陆大成，汪度，王晓晖，刘祥林，王占国. MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光[J]. Chin. J. Semicond., 1996, 17(4): 252..Export: BibTex EndNote

董建荣，陆大成，汪度，王晓晖，刘祥林，王占国. MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光[J]. Chin. J. Semicond., 1996, 17(4): 252...

X射线双晶衍射在分布布喇格反射镜研制中的应用

林世鸣，高洪海，张春辉，吴荣汉，庄岩，王玉田

Chin. J. Semicond. 1996, 17(4): 257-260

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 257.

林世鸣，高洪海，张春辉，吴荣汉，庄岩，王玉田. X射线双晶衍射在分布布喇格反射镜研制中的应用[J]. Chin. J. Semicond., 1996, 17(4): 257..Export: BibTex EndNote

林世鸣，高洪海，张春辉，吴荣汉，庄岩，王玉田. X射线双晶衍射在分布布喇格反射镜研制中的应用[J]. Chin. J. Semicond., 1996, 17(4): 257...

β－FeSi_2／SIMOX──一种新结构的光电子材料

王连卫，沈勤我，林贤，林成鲁，邹世昌，庄志诚

Chin. J. Semicond. 1996, 17(4): 261-264

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 261.

王连卫，沈勤我，林贤，林成鲁，邹世昌，庄志诚. β－FeSi_2／SIMOX──一种新结构的光电子材料[J]. Chin. J. Semicond., 1996, 17(4): 261..Export: BibTex EndNote

王连卫，沈勤我，林贤，林成鲁，邹世昌，庄志诚. β－FeSi_2／SIMOX──一种新结构的光电子材料[J]. Chin. J. Semicond., 1996, 17(4): 261...

Co／Si和Co／SiO_2界面反应的观察

张灶利，翟启华，纪箴，肖治纲，杜国维

Chin. J. Semicond. 1996, 17(4): 265-268

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 265.

张灶利，翟启华，纪箴，肖治纲，杜国维. Co／Si和Co／SiO_2界面反应的观察[J]. Chin. J. Semicond., 1996, 17(4): 265..Export: BibTex EndNote

张灶利，翟启华，纪箴，肖治纲，杜国维. Co／Si和Co／SiO_2界面反应的观察[J]. Chin. J. Semicond., 1996, 17(4): 265...

硅中氮的电学行为的研究

佘思明，李冀东，廖平婴

Chin. J. Semicond. 1996, 17(4): 269-274

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 269.

佘思明，李冀东，廖平婴. 硅中氮的电学行为的研究[J]. Chin. J. Semicond., 1996, 17(4): 269..Export: BibTex EndNote

佘思明，李冀东，廖平婴. 硅中氮的电学行为的研究[J]. Chin. J. Semicond., 1996, 17(4): 269...

GaAs／Al_xGa_（1－x）As多量子阱掩埋条形激光器

李世祖，张敬明，杨国文，徐遵图，何晓曦，徐俊英，肖建伟，陈良惠

Chin. J. Semicond. 1996, 17(4): 275-278

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 275.

李世祖，张敬明，杨国文，徐遵图，何晓曦，徐俊英，肖建伟，陈良惠. GaAs／Al_xGa_（1－x）As多量子阱掩埋条形激光器[J]. Chin. J. Semicond., 1996, 17(4): 275..Export: BibTex EndNote

李世祖，张敬明，杨国文，徐遵图，何晓曦，徐俊英，肖建伟，陈良惠. GaAs／Al_xGa_（1－x）As多量子阱掩埋条形激光器[J]. Chin. J. Semicond., 1996, 17(4): 275...

硅1．3～1．6μm电光强度调制器探索

赵策洲，刘育梁，李国正，刘恩科，高勇

Chin. J. Semicond. 1996, 17(4): 279-282

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 279.

赵策洲，刘育梁，李国正，刘恩科，高勇. 硅1．3～1．6μm电光强度调制器探索[J]. Chin. J. Semicond., 1996, 17(4): 279..Export: BibTex EndNote

赵策洲，刘育梁，李国正，刘恩科，高勇. 硅1．3～1．6μm电光强度调制器探索[J]. Chin. J. Semicond., 1996, 17(4): 279...

RESURF原理应用于SOI LDMOS晶体管

富力文，阎力大

Chin. J. Semicond. 1996, 17(4): 283-288

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 283.

富力文，阎力大. RESURF原理应用于SOI LDMOS晶体管[J]. Chin. J. Semicond., 1996, 17(4): 283..Export: BibTex EndNote

富力文，阎力大. RESURF原理应用于SOI LDMOS晶体管[J]. Chin. J. Semicond., 1996, 17(4): 283...

适合于PSPICE的一种精确的功率MOSFET等效电路

周宝霞，陈治明，王守觉

Chin. J. Semicond. 1996, 17(4): 289-293

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 289.

周宝霞，陈治明，王守觉. 适合于PSPICE的一种精确的功率MOSFET等效电路[J]. Chin. J. Semicond., 1996, 17(4): 289..Export: BibTex EndNote

周宝霞，陈治明，王守觉. 适合于PSPICE的一种精确的功率MOSFET等效电路[J]. Chin. J. Semicond., 1996, 17(4): 289...

自对准外延CoSi_2源漏接触CMOS器件技术

邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏

Chin. J. Semicond. 1996, 17(4): 294-299

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 294.

邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏. 自对准外延CoSi_2源漏接触CMOS器件技术[J]. Chin. J. Semicond., 1996, 17(4): 294..Export: BibTex EndNote

邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏. 自对准外延CoSi_2源漏接触CMOS器件技术[J]. Chin. J. Semicond., 1996, 17(4): 294...

SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析

竺士炀，林成鲁

Chin. J. Semicond. 1996, 17(4): 300-304

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 300.

竺士炀，林成鲁. SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析[J]. Chin. J. Semicond., 1996, 17(4): 300..Export: BibTex EndNote

竺士炀，林成鲁. SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析[J]. Chin. J. Semicond., 1996, 17(4): 300...

固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究

房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪

Chin. J. Semicond. 1996, 17(4): 305-312

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 305.

房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪. 固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究[J]. Chin. J. Semicond., 1996, 17(4): 305..Export: BibTex EndNote

房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪. 固相外延CoSi_2薄膜作为扩散源形成n~＋p浅结技术研究[J]. Chin. J. Semicond., 1996, 17(4): 305...

真空微电子器件的栅极制造技术

朱长纯，关辉，李天英

Chin. J. Semicond. 1996, 17(4): 313-317

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 313.

朱长纯，关辉，李天英. 真空微电子器件的栅极制造技术[J]. Chin. J. Semicond., 1996, 17(4): 313..Export: BibTex EndNote

朱长纯，关辉，李天英. 真空微电子器件的栅极制造技术[J]. Chin. J. Semicond., 1996, 17(4): 313...

多孔硅膜的半峰值宽度小于10nm的针形发光峰

夏永伟，滕学公

Chin. J. Semicond. 1996, 17(4): 318-320

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(4): 318.

夏永伟，滕学公. 多孔硅膜的半峰值宽度小于10nm的针形发光峰[J]. Chin. J. Semicond., 1996, 17(4): 318..Export: BibTex EndNote

夏永伟，滕学公. 多孔硅膜的半峰值宽度小于10nm的针形发光峰[J]. Chin. J. Semicond., 1996, 17(4): 318...

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