Journal of Semiconductors

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Volume 17, Issue 6, Jun 1996

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CONTENTS

ZnSe的MOVPE生长相图：以DMZn和H_2Se为源

段树坤，陆大成

Chin. J. Semicond. 1996, 17(6): 401-405

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 401.

段树坤，陆大成. ZnSe的MOVPE生长相图：以DMZn和H_2Se为源[J]. Chin. J. Semicond., 1996, 17(6): 401..Export: BibTex EndNote

段树坤，陆大成. ZnSe的MOVPE生长相图：以DMZn和H_2Se为源[J]. Chin. J. Semicond., 1996, 17(6): 401...

纳米硅薄膜结构特性研究

韩伟强，韩高荣，丁子上.

Chin. J. Semicond. 1996, 17(6): 406-409

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 406.

韩伟强，韩高荣，丁子上.. 纳米硅薄膜结构特性研究[J]. Chin. J. Semicond., 1996, 17(6): 406..Export: BibTex EndNote

韩伟强，韩高荣，丁子上.. 纳米硅薄膜结构特性研究[J]. Chin. J. Semicond., 1996, 17(6): 406...

Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究

赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.

Chin. J. Semicond. 1996, 17(6): 410-415

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 410.

赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.. Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究[J]. Chin. J. Semicond., 1996, 17(6): 410..Export: BibTex EndNote

赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.. Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究[J]. Chin. J. Semicond., 1996, 17(6): 410...

表面包覆硬脂酸的纳米SnO_2的XRD、ESR、FTIR光谱特征

吴晓春，邹炳锁，张桂兰，汤国庆，余保龙，陈文驹，郭虎森，刘月亭

Chin. J. Semicond. 1996, 17(6): 416-420

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 416.

吴晓春，邹炳锁，张桂兰，汤国庆，余保龙，陈文驹，郭虎森，刘月亭. 表面包覆硬脂酸的纳米SnO_2的XRD、ESR、FTIR光谱特征[J]. Chin. J. Semicond., 1996, 17(6): 416..Export: BibTex EndNote

吴晓春，邹炳锁，张桂兰，汤国庆，余保龙，陈文驹，郭虎森，刘月亭. 表面包覆硬脂酸的纳米SnO_2的XRD、ESR、FTIR光谱特征[J]. Chin. J. Semicond., 1996, 17(6): 416...

四极SIMS对Al_xGa_（1－x）As中Si的定量分析

姜志雄，查良镇，王佑祥，陈春华，陈新

Chin. J. Semicond. 1996, 17(6): 421-427

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 421.

姜志雄，查良镇，王佑祥，陈春华，陈新. 四极SIMS对Al_xGa_（1－x）As中Si的定量分析[J]. Chin. J. Semicond., 1996, 17(6): 421..Export: BibTex EndNote

姜志雄，查良镇，王佑祥，陈春华，陈新. 四极SIMS对Al_xGa_（1－x）As中Si的定量分析[J]. Chin. J. Semicond., 1996, 17(6): 421...

用有效折射率／有限元法分析脊形光波导及其方向耦合器特性

刘立杰，于荣金，洪佩智

Chin. J. Semicond. 1996, 17(6): 428-434

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 428.

刘立杰，于荣金，洪佩智. 用有效折射率／有限元法分析脊形光波导及其方向耦合器特性[J]. Chin. J. Semicond., 1996, 17(6): 428..Export: BibTex EndNote

刘立杰，于荣金，洪佩智. 用有效折射率／有限元法分析脊形光波导及其方向耦合器特性[J]. Chin. J. Semicond., 1996, 17(6): 428...

新型集成压力传感器的研究

张维新，毛赣如，曲宏伟，姚素英，李建文

Chin. J. Semicond. 1996, 17(6): 435-439

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 435.

张维新，毛赣如，曲宏伟，姚素英，李建文. 新型集成压力传感器的研究[J]. Chin. J. Semicond., 1996, 17(6): 435..Export: BibTex EndNote

张维新，毛赣如，曲宏伟，姚素英，李建文. 新型集成压力传感器的研究[J]. Chin. J. Semicond., 1996, 17(6): 435...

薄膜SOIMOSFET浮体效应的抑制优化研究

奚雪梅，王阳元

Chin. J. Semicond. 1996, 17(6): 440-445

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 440.

奚雪梅，王阳元. 薄膜SOIMOSFET浮体效应的抑制优化研究[J]. Chin. J. Semicond., 1996, 17(6): 440..Export: BibTex EndNote

奚雪梅，王阳元. 薄膜SOIMOSFET浮体效应的抑制优化研究[J]. Chin. J. Semicond., 1996, 17(6): 440...

双极型器件慢界面陷阱能量分布的1／f噪声分析方法

庄奕琪，孙青，侯洵

Chin. J. Semicond. 1996, 17(6): 446-451

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 446.

庄奕琪，孙青，侯洵. 双极型器件慢界面陷阱能量分布的1／f噪声分析方法[J]. Chin. J. Semicond., 1996, 17(6): 446..Export: BibTex EndNote

庄奕琪，孙青，侯洵. 双极型器件慢界面陷阱能量分布的1／f噪声分析方法[J]. Chin. J. Semicond., 1996, 17(6): 446...

1．5μm全耗尽CMOS／SIMOX门阵列的研制

张兴，魏丽琼，王阳元

Chin. J. Semicond. 1996, 17(6): 452-457

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 452.

张兴，魏丽琼，王阳元. 1．5μm全耗尽CMOS／SIMOX门阵列的研制[J]. Chin. J. Semicond., 1996, 17(6): 452..Export: BibTex EndNote

张兴，魏丽琼，王阳元. 1．5μm全耗尽CMOS／SIMOX门阵列的研制[J]. Chin. J. Semicond., 1996, 17(6): 452...

氧化物－电解溶液界面的表面基吸附模型研究

牛蒙年，丁辛芳，童勤义

Chin. J. Semicond. 1996, 17(6): 458-463

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 458.

牛蒙年，丁辛芳，童勤义. 氧化物－电解溶液界面的表面基吸附模型研究[J]. Chin. J. Semicond., 1996, 17(6): 458..Export: BibTex EndNote

牛蒙年，丁辛芳，童勤义. 氧化物－电解溶液界面的表面基吸附模型研究[J]. Chin. J. Semicond., 1996, 17(6): 458...

低能量Ar~＋背面轰击对晶体管特性的影响

李观启，曾绍鸿，黄美浅

Chin. J. Semicond. 1996, 17(6): 464-469

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 464.

李观启，曾绍鸿，黄美浅. 低能量Ar~＋背面轰击对晶体管特性的影响[J]. Chin. J. Semicond., 1996, 17(6): 464..Export: BibTex EndNote

李观启，曾绍鸿，黄美浅. 低能量Ar~＋背面轰击对晶体管特性的影响[J]. Chin. J. Semicond., 1996, 17(6): 464...

KOH溶液无掩膜腐蚀加工硅对称梁技术研究

李昕欣，鲍敏杭，沈绍群

Chin. J. Semicond. 1996, 17(6): 470-475

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 470.

李昕欣，鲍敏杭，沈绍群. KOH溶液无掩膜腐蚀加工硅对称梁技术研究[J]. Chin. J. Semicond., 1996, 17(6): 470..Export: BibTex EndNote

李昕欣，鲍敏杭，沈绍群. KOH溶液无掩膜腐蚀加工硅对称梁技术研究[J]. Chin. J. Semicond., 1996, 17(6): 470...

GaAs表面S钝化方法：S气氛辉光放电法

陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明

Chin. J. Semicond. 1996, 17(6): 476-480

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(6): 476.

陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明. GaAs表面S钝化方法：S气氛辉光放电法[J]. Chin. J. Semicond., 1996, 17(6): 476..Export: BibTex EndNote

陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明. GaAs表面S钝化方法：S气氛辉光放电法[J]. Chin. J. Semicond., 1996, 17(6): 476...

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