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Study on Structural Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys
Chin. J. Semicond. 1997, 18(3): 228
LP-MOVPE生长的1.3μm InGaAsP/InP张压应变交替MQW特性
Chin. J. Semicond. 1997, 18(3): 232
Effects of Non-abrupt Interface on Waveguide Properties of SiGe/Si MQW Photodetector
Chin. J. Semicond. 1997, 18(3): 237