匹配In_(0.53)Ga_(0.47)As/InP量子阱材料的GSMBE生长及特性分析
Chin. J. Semicond. 1997, 18(6): 401
Chin. J. Semicond. 1997, 18(6): 408
Chin. J. Semicond. 1997, 18(6): 412
Chin. J. Semicond. 1997, 18(6): 417
高性能实用化GaInP-AlGaInP半导体量子阱可见光激光器
Chin. J. Semicond. 1997, 18(6): 424
Chin. J. Semicond. 1997, 18(6): 431
P~+-Ge_xSi_(1-x)/P-Si异质结内光发射(HIP)长波长红外探测器结构的改进及其在77K下的特性
Chin. J. Semicond. 1997, 18(6): 436
适合硅微机械系统(MEMS)的集成驱动结构──铝硅双金属膜片
Chin. J. Semicond. 1997, 18(6): 441
Chin. J. Semicond. 1997, 18(6): 448
Chin. J. Semicond. 1997, 18(6): 454
Chin. J. Semicond. 1997, 18(6): 460
Chin. J. Semicond. 1997, 18(6): 466
50周期的In_(0.3)Ga_(0.7)As/GaAs应变超晶格的生长
Chin. J. Semicond. 1997, 18(6): 470
Chin. J. Semicond. 1997, 18(6): 474
Chin. J. Semicond. 1997, 18(6): 478