Chin. J. Semicond. 1998, 19(10): 721
Chin. J. Semicond. 1998, 19(10): 729
Chin. J. Semicond. 1998, 19(10): 736
Chin. J. Semicond. 1998, 19(10): 740
Fe_2O_3-SnO_2双层薄膜对氨气敏感特性及其机理研究
Chin. J. Semicond. 1998, 19(10): 745
Chin. J. Semicond. 1998, 19(10): 752
Chin. J. Semicond. 1998, 19(10): 756
Si/Si_(1-x)Ge_x应变层异质结双极晶体管(HBT)交直流特性的仿真研究
Chin. J. Semicond. 1998, 19(10): 765
Chin. J. Semicond. 1998, 19(10): 773
Chin. J. Semicond. 1998, 19(10): 777
Chin. J. Semicond. 1998, 19(10): 784
Chin. J. Semicond. 1998, 19(10): 788
1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器
Chin. J. Semicond. 1998, 19(10): 793
Chin. J. Semicond. 1998, 19(10): 798