温度引起的ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中势阱层和势垒层的反转
Chin. J. Semicond. 1999, 20(11): 945
Chin. J. Semicond. 1999, 20(11): 952
Chin. J. Semicond. 1999, 20(11): 957
Chin. J. Semicond. 1999, 20(11): 963
电子束蒸镀Y_2O_3-ZrO_2减反射膜用于1.3μm半导体激光器
Chin. J. Semicond. 1999, 20(11): 971
Chin. J. Semicond. 1999, 20(11): 977
Chin. J. Semicond. 1999, 20(11): 983
Chin. J. Semicond. 1999, 20(11): 989
Chin. J. Semicond. 1999, 20(11): 994
Chin. J. Semicond. 1999, 20(11): 999
Chin. J. Semicond. 1999, 20(11): 1004
Chin. J. Semicond. 1999, 20(11): 1010
Chin. J. Semicond. 1999, 20(11): 1015
Chin. J. Semicond. 1999, 20(11): 1022
Chin. J. Semicond. 1999, 20(11): 1026
Chin. J. Semicond. 1999, 20(11): 1034
Chin. J. Semicond. 1999, 20(11): 1040
铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀
Chin. J. Semicond. 1999, 20(11): 1044