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Volume 20, Issue 3, Mar 1999
Table of Content
CONTENTS
铁电-硅微集成系统
李志坚, 任天令, 刘理天
Chin. J. Semicond.  1999, 20(3): 177-182
Abstract PDF

PECVD SiN_x薄膜应力的研究
赵永军, 王民娟, 杨拥军, 梁春广
Chin. J. Semicond.  1999, 20(3): 183-187
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基区复合对nSi/pSi_(1-x)Ge_x/nSi晶体管共射极电流增益的影响
安俊明, 李建军, 魏希文, 沈光地, 陈建新, 邹德恕
Chin. J. Semicond.  1999, 20(3): 188-193
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MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器
徐遵图, 杨国文, 徐俊英, 张敬明, 沈光地, 高国, 廉鹏, 陈良惠
Chin. J. Semicond.  1999, 20(3): 194-199
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Pt/TiO_2二极管湿敏传感器
孙德明, 肖梦秋, 汪荣昌, 戎瑞芬
Chin. J. Semicond.  1999, 20(3): 200-205
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一维离散小波/小波包变换的VLSI结构
吴晓冬, 李永明, 陈弘毅
Chin. J. Semicond.  1999, 20(3): 206-213
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High Temperature 1.3μm AlGaInAs/InP Strained Multiquantum Well Laser Grown by Metalorganic Vapor Phase Epitaxy
Bo Chen(陈博), Xiaojie Wang(汪孝杰), Wei Wang(王圩)
Chin. J. Semicond.  1999, 20(3): 214-218
Abstract PDF

We have investigated the AlGaInA/InP compressively strained layer separate confinement heterostructure multiquantum well (SCH-MQW) laser structure, which was grown by Low-Pressure Metalorganic Vapor phase Epitaxy. The T0 of AlGaInA/InP SCH-MQW buried-heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0.54dB at temperatures between 20℃ and 80℃.

We have investigated the AlGaInA/InP compressively strained layer separate confinement heterostructure multiquantum well (SCH-MQW) laser structure, which was grown by Low-Pressure Metalorganic Vapor phase Epitaxy. The T0 of AlGaInA/InP SCH-MQW buried-heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0.54dB at temperatures between 20℃ and 80℃.
包含多子带结构的MOS器件开启电压量子力学效应修正模型
马玉涛, 李志坚, 刘理天
Chin. J. Semicond.  1999, 20(3): 219-224
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GaAs(001)衬底上MOCVD生长的立方相GaN外延薄膜的光学性质研究
孙小玲, 杨辉, 李国华, 郑联喜, 李建斌, 王玉田, 王占国
Chin. J. Semicond.  1999, 20(3): 225-230
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二氧化硅覆盖退火增强磷化铟基体激光器材料的量子阱混合
韩德俊, 朱洪亮, J G Simmons, Q C Zhao
Chin. J. Semicond.  1999, 20(3): 231-236
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表面光电压测量P型硅抛光片少子扩散长度及铁杂质含量的研究
屠海令, 朱悟新, 王敬, 周旗钢, 张椿, 孙燕
Chin. J. Semicond.  1999, 20(3): 237-241
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Si~+注入SiO_2薄膜的三个PL峰及其受RTA的影响
刘世祥, 刘渝珍, 伍勇, 石万全, 陈志坚, 韩一琴, 刘金龙, 张通和, 姚德成
Chin. J. Semicond.  1999, 20(3): 242-245
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Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应
龚健, 符小荣, 宋世庚, 谭辉, 陶明德
Chin. J. Semicond.  1999, 20(3): 246-249
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对Fukui法测量MESFET栅极串联电阻的改进
穆甫臣, 李志国, 张万荣, 郭伟玲, 孙英华, 严永鑫
Chin. J. Semicond.  1999, 20(3): 250-253
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640×480 TFT-AMLCD有源层的制备
葛长军, 靳在渊, 成建波
Chin. J. Semicond.  1999, 20(3): 254-259
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AlAs选择性湿氮氧化的工艺条件对氧化速率的影响
张益, 潘钟, 杜云, 黄永箴, 吴荣汉
Chin. J. Semicond.  1999, 20(3): 260-264
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