Chin. J. Semicond. 1999, 20(5): 353
Chin. J. Semicond. 1999, 20(5): 358
Chin. J. Semicond. 1999, 20(5): 365
Chin. J. Semicond. 1999, 20(5): 371
Chin. J. Semicond. 1999, 20(5): 378
Chin. J. Semicond. 1999, 20(5): 383
平面掺杂异质结场效应管的二维电子气浓度和材料结构尺寸之间的关系
Chin. J. Semicond. 1999, 20(5): 389
Chin. J. Semicond. 1999, 20(5): 395
Chin. J. Semicond. 1999, 20(5): 400
Al_xGa_(1-x)N and GaN/Al_xGa_(1-x)N Quantum Wells Grown by Gas Source Molecular Beam Epitaxy
Chin. J. Semicond. 1999, 20(5): 407
Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm Wavelength
Chin. J. Semicond. 1999, 20(5): 412
2.5Gb/s1.55μm InGaAsP/InP分布反馈激光器/电吸收调制器单片集成器件
Chin. J. Semicond. 1999, 20(5): 416
Chin. J. Semicond. 1999, 20(5): 421
Chin. J. Semicond. 1999, 20(5): 425
混晶GaAs_(1-x)P_x∶N(x=0.4)中的N_X和N_Γ发光带的研究
Chin. J. Semicond. 1999, 20(5): 429
Chin. J. Semicond. 1999, 20(5): 433
Chin. J. Semicond. 1999, 20(5): 437