Journal of Semiconductors

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Volume 20, Issue 6, Jun 1999

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CONTENTS

CdF_2半导体中表面磁极化子的性质

肖景林, 额尔敦朝鲁, 张鹏

Chin. J. Semicond. 1999, 20(6): 441-447

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 441.

肖景林, 额尔敦朝鲁, 张鹏. CdF_2半导体中表面磁极化子的性质[J]. Chin. J. Semicond., 1999, 20(6): 441..Export: BibTex EndNote

肖景林, 额尔敦朝鲁, 张鹏. CdF_2半导体中表面磁极化子的性质[J]. Chin. J. Semicond., 1999, 20(6): 441...

硅中氦离子注入所产生的微孔结构的吸杂作用

闵靖, 朱剑豪, 吕翔

Chin. J. Semicond. 1999, 20(6): 448-451

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 448.

闵靖, 朱剑豪, 吕翔. 硅中氦离子注入所产生的微孔结构的吸杂作用[J]. Chin. J. Semicond., 1999, 20(6): 448..Export: BibTex EndNote

闵靖, 朱剑豪, 吕翔. 硅中氦离子注入所产生的微孔结构的吸杂作用[J]. Chin. J. Semicond., 1999, 20(6): 448...

Pd/Sb(Mn)薄膜的光学性质研究

程磊, 赵一广, 吴克, 焦鹏飞, 陈娓兮

Chin. J. Semicond. 1999, 20(6): 452-457

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 452.

程磊, 赵一广, 吴克, 焦鹏飞, 陈娓兮. Pd/Sb(Mn)薄膜的光学性质研究[J]. Chin. J. Semicond., 1999, 20(6): 452..Export: BibTex EndNote

程磊, 赵一广, 吴克, 焦鹏飞, 陈娓兮. Pd/Sb(Mn)薄膜的光学性质研究[J]. Chin. J. Semicond., 1999, 20(6): 452...

Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀

王启元, 王俊, 韩秀峰, 邓惠芳, 王建华, 昝育德, 蔡田海, 郁元桓, 林兰英

Chin. J. Semicond. 1999, 20(6): 458-462

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 458.

王启元, 王俊, 韩秀峰, 邓惠芳, 王建华, 昝育德, 蔡田海, 郁元桓, 林兰英. Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀[J]. Chin. J. Semicond., 1999, 20(6): 458..Export: BibTex EndNote

王启元, 王俊, 韩秀峰, 邓惠芳, 王建华, 昝育德, 蔡田海, 郁元桓, 林兰英. Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀[J]. Chin. J. Semicond., 1999, 20(6): 458...

多晶硅薄膜应力特性研究

张国炳, 郝一龙, 田大宇, 刘诗美, 王铁松, 武国英

Chin. J. Semicond. 1999, 20(6): 463-467

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 463.

张国炳, 郝一龙, 田大宇, 刘诗美, 王铁松, 武国英. 多晶硅薄膜应力特性研究[J]. Chin. J. Semicond., 1999, 20(6): 463..Export: BibTex EndNote

张国炳, 郝一龙, 田大宇, 刘诗美, 王铁松, 武国英. 多晶硅薄膜应力特性研究[J]. Chin. J. Semicond., 1999, 20(6): 463...

SiGe HBTs高频特性模拟分析

赵立新, 沈光地

Chin. J. Semicond. 1999, 20(6): 468-475

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 468.

赵立新, 沈光地. SiGe HBTs高频特性模拟分析[J]. Chin. J. Semicond., 1999, 20(6): 468..Export: BibTex EndNote

赵立新, 沈光地. SiGe HBTs高频特性模拟分析[J]. Chin. J. Semicond., 1999, 20(6): 468...

一种新型的光敏变容管的研究

陈杰

Chin. J. Semicond. 1999, 20(6): 476-480

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 476.

陈杰. 一种新型的光敏变容管的研究[J]. Chin. J. Semicond., 1999, 20(6): 476..Export: BibTex EndNote

陈杰. 一种新型的光敏变容管的研究[J]. Chin. J. Semicond., 1999, 20(6): 476...

VLSI3-维容错结构及其成品率分析

赵天绪, 郝跃, 许冬岗

Chin. J. Semicond. 1999, 20(6): 481-487

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 481.

赵天绪, 郝跃, 许冬岗. VLSI3-维容错结构及其成品率分析[J]. Chin. J. Semicond., 1999, 20(6): 481..Export: BibTex EndNote

赵天绪, 郝跃, 许冬岗. VLSI3-维容错结构及其成品率分析[J]. Chin. J. Semicond., 1999, 20(6): 481...

GaAs/GaAlAs量子阱激子能量调谐的新方法

徐仲英, 王建农, 王玉琪, 葛惟琨, 李晴, 李树深

Chin. J. Semicond. 1999, 20(6): 488-491

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 488.

徐仲英, 王建农, 王玉琪, 葛惟琨, 李晴, 李树深. GaAs/GaAlAs量子阱激子能量调谐的新方法[J]. Chin. J. Semicond., 1999, 20(6): 488..Export: BibTex EndNote

徐仲英, 王建农, 王玉琪, 葛惟琨, 李晴, 李树深. GaAs/GaAlAs量子阱激子能量调谐的新方法[J]. Chin. J. Semicond., 1999, 20(6): 488...

ZnCdSe/ZnSe单量子阱中的双激子发光谱

魏彦锋, 黄大鸣, 王兴军, 俞根才, 诸长生, 王迅

Chin. J. Semicond. 1999, 20(6): 492-496

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 492.

魏彦锋, 黄大鸣, 王兴军, 俞根才, 诸长生, 王迅. ZnCdSe/ZnSe单量子阱中的双激子发光谱[J]. Chin. J. Semicond., 1999, 20(6): 492..Export: BibTex EndNote

魏彦锋, 黄大鸣, 王兴军, 俞根才, 诸长生, 王迅. ZnCdSe/ZnSe单量子阱中的双激子发光谱[J]. Chin. J. Semicond., 1999, 20(6): 492...

δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移

程文超, 夏建白, 郑文硕, 黄醒良, 金载元, 林三镐, 瑞恩庆, 李亨宰

Chin. J. Semicond. 1999, 20(6): 497-500

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 497.

程文超, 夏建白, 郑文硕, 黄醒良, 金载元, 林三镐, 瑞恩庆, 李亨宰. δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移[J]. Chin. J. Semicond., 1999, 20(6): 497..Export: BibTex EndNote

程文超, 夏建白, 郑文硕, 黄醒良, 金载元, 林三镐, 瑞恩庆, 李亨宰. δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移[J]. Chin. J. Semicond., 1999, 20(6): 497...

浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应

朱洪亮, 韩德俊, 胡雄伟, 汪孝杰, 王圩

Chin. J. Semicond. 1999, 20(6): 501-505

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 501.

朱洪亮, 韩德俊, 胡雄伟, 汪孝杰, 王圩. 浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应[J]. Chin. J. Semicond., 1999, 20(6): 501..Export: BibTex EndNote

朱洪亮, 韩德俊, 胡雄伟, 汪孝杰, 王圩. 浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应[J]. Chin. J. Semicond., 1999, 20(6): 501...

Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology

Xu Guoyang, Yan Xuejin, Zhu Hongliang，Zhou Fan, Duan Lihong, Tian Huiliang，Bai Yunxia, Wang Wei

Chin. J. Semicond. 1999, 20(6): 506-509

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 506.

X G yang, Y X jin, Z H Fan, D L hong, T H Yunxia, W Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. Chin. J. Semicond., 1999, 20(6): 506..Export: BibTex EndNote

X G yang, Y X jin, Z H Fan, D L hong, T H Yunxia, W Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. Chin. J. Semicond., 1999, 20(6): 506...

VLSI Design Debug Using Focused Ion Beam Technology

Chang, Xu

Chin. J. Semicond. 1999, 20(6): 510-514

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 510.

Chang, Xu. VLSI Design Debug Using Focused Ion Beam Technology[J]. Chin. J. Semicond., 1999, 20(6): 510..Export: BibTex EndNote

Chang, Xu. VLSI Design Debug Using Focused Ion Beam Technology[J]. Chin. J. Semicond., 1999, 20(6): 510...

高质量栅氧化层的制备及其辐照特性研究

张兴, 王阳元

Chin. J. Semicond. 1999, 20(6): 515-519

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 515.

张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. Chin. J. Semicond., 1999, 20(6): 515..Export: BibTex EndNote

张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. Chin. J. Semicond., 1999, 20(6): 515...

包含自加热效应的BJT电路的直流及瞬态模拟

陈勇, 杨谟华, 朱德之

Chin. J. Semicond. 1999, 20(6): 520-524

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 520.

陈勇, 杨谟华, 朱德之. 包含自加热效应的BJT电路的直流及瞬态模拟[J]. Chin. J. Semicond., 1999, 20(6): 520..Export: BibTex EndNote

陈勇, 杨谟华, 朱德之. 包含自加热效应的BJT电路的直流及瞬态模拟[J]. Chin. J. Semicond., 1999, 20(6): 520...

聚硅烷(紫外光敏材料)的氧等离子体处理特性

谢茂浓, 傅鹤鉴

Chin. J. Semicond. 1999, 20(6): 525-528

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(6): 525.

谢茂浓, 傅鹤鉴. 聚硅烷(紫外光敏材料)的氧等离子体处理特性[J]. Chin. J. Semicond., 1999, 20(6): 525..Export: BibTex EndNote

谢茂浓, 傅鹤鉴. 聚硅烷(紫外光敏材料)的氧等离子体处理特性[J]. Chin. J. Semicond., 1999, 20(6): 525...

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