Monolithic Integration DFB Laser Array by Angling Active Stripe and Using Thin-Film Stripe Heater
Chin. J. Semicond. 2000, 21(7): 625
Novel Type of Wide-Bandwidth GaAs/AlGaAs Infrared Photodetectors
Chin. J. Semicond. 2000, 21(7): 630
Forming of Very Shallow Junction for S/D Extension in Deep Sub- Micron CMOS Devices
Chin. J. Semicond. 2000, 21(7): 637
Chin. J. Semicond. 2000, 21(7): 646
衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响
Chin. J. Semicond. 2000, 21(7): 652
Chin. J. Semicond. 2000, 21(7): 657
Chin. J. Semicond. 2000, 21(7): 662
Chin. J. Semicond. 2000, 21(7): 667
在硅衬底上用HFCVD法生长的纳米SiC薄膜及其室温光致发光
Chin. J. Semicond. 2000, 21(7): 673
Si基热氧化Si_(1-x-y)Ge_xC_y薄膜的室温光致发光特性
Chin. J. Semicond. 2000, 21(7): 677
Chin. J. Semicond. 2000, 21(7): 682
用SIPOS-SiO_2复合层对4H-SiCn~+pp~+结构钝化的分析
Chin. J. Semicond. 2000, 21(7): 686
Chin. J. Semicond. 2000, 21(7): 691
Chin. J. Semicond. 2000, 21(7): 697
Chin. J. Semicond. 2000, 21(7): 705
Chin. J. Semicond. 2000, 21(7): 711
Chin. J. Semicond. 2000, 21(7): 717
Chin. J. Semicond. 2000, 21(7): 723
Chin. J. Semicond. 2000, 21(7): 726