带寄生及匹配约束的CMOS模拟电路模块的STACK生成优化方法(英文)
Chin. J. Semicond. 2001, 22(1): 1
1.55μm In_(1 - x - y) Ga_y Al_x As压缩应变量子阱激光器的近似阱宽和光增益公式(英文)
Chin. J. Semicond. 2001, 22(1): 11
栅控二极管正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性(英文)
Chin. J. Semicond. 2001, 22(1): 18
Chin. J. Semicond. 2001, 22(1): 25
离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文)
Chin. J. Semicond. 2001, 22(1): 31
使用 X射线衍射技术判定 Si C单晶体的结构和极性(英文)
Chin. J. Semicond. 2001, 22(1): 35
GSMBE生长 1.8- 2.0μm波段In Ga As/ In Ga As P应变量子阱激光器
Chin. J. Semicond. 2001, 22(1): 40
Chin. J. Semicond. 2001, 22(1): 47
Chin. J. Semicond. 2001, 22(1): 53
Chin. J. Semicond. 2001, 22(1): 57
Chin. J. Semicond. 2001, 22(1): 61
Chin. J. Semicond. 2001, 22(1): 66
Chin. J. Semicond. 2001, 22(1): 69
发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析
Chin. J. Semicond. 2001, 22(1): 74
Chin. J. Semicond. 2001, 22(1): 79
Chin. J. Semicond. 2001, 22(1): 83
Chin. J. Semicond. 2001, 22(1): 91
Chin. J. Semicond. 2001, 22(1): 96
Chin. J. Semicond. 2001, 22(1): 102
Chin. J. Semicond. 2001, 22(1): 107