Quantum Well Infrared Photodetectors:the Basic Design and New Research Directions
Chin. J. Semicond. 2001, 22(5): 529
Chin. J. Semicond. 2001, 22(5): 538
采用TEOS和H_2O源PECVD方法生长氧化硅厚膜(英文)
Chin. J. Semicond. 2001, 22(5): 543
Chin. J. Semicond. 2001, 22(5): 548
Chin. J. Semicond. 2001, 22(5): 554
Chin. J. Semicond. 2001, 22(5): 558
Chin. J. Semicond. 2001, 22(5): 565
Chin. J. Semicond. 2001, 22(5): 569
Chin. J. Semicond. 2001, 22(5): 573
Chin. J. Semicond. 2001, 22(5): 580
等离子体化学气相沉积非晶SiO_x∶H(0≤x≤2.0)薄膜的红外光谱
Chin. J. Semicond. 2001, 22(5): 587
Chin. J. Semicond. 2001, 22(5): 594
Chin. J. Semicond. 2001, 22(5): 599
MOCVD生长的InGaN薄膜的离子束背散射沟道及其光致发光
Chin. J. Semicond. 2001, 22(5): 604
Chin. J. Semicond. 2001, 22(5): 609
Chin. J. Semicond. 2001, 22(5): 613
Chin. J. Semicond. 2001, 22(5): 618
Chin. J. Semicond. 2001, 22(5): 622
Chin. J. Semicond. 2001, 22(5): 629
Chin. J. Semicond. 2001, 22(5): 636
Chin. J. Semicond. 2001, 22(5): 641
Chin. J. Semicond. 2001, 22(5): 646
Chin. J. Semicond. 2001, 22(5): 652
Chin. J. Semicond. 2001, 22(5): 656
Chin. J. Semicond. 2001, 22(5): 660
Chin. J. Semicond. 2001, 22(5): 664
Chin. J. Semicond. 2001, 22(5): 670