Chin. J. Semicond. 2001, 22(9): 1097
RESURF LDMOS功率器件表面场分布和击穿电压的解析模型(英文)
Chin. J. Semicond. 2001, 22(9): 1102
Chin. J. Semicond. 2001, 22(9): 1107
Chin. J. Semicond. 2001, 22(9): 1112
Chin. J. Semicond. 2001, 22(9): 1116
Chin. J. Semicond. 2001, 22(9): 1119
温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响
Chin. J. Semicond. 2001, 22(9): 1122
Chin. J. Semicond. 2001, 22(9): 1127
Chin. J. Semicond. 2001, 22(9): 1131
Chin. J. Semicond. 2001, 22(9): 1135
Chin. J. Semicond. 2001, 22(9): 1139
Chin. J. Semicond. 2001, 22(9): 1143
Chin. J. Semicond. 2001, 22(9): 1147
Chin. J. Semicond. 2001, 22(9): 1154
4H-SiC射频功率MESFET大信号直流I-V特性解析模型
Chin. J. Semicond. 2001, 22(9): 1160
Chin. J. Semicond. 2001, 22(9): 1165
Chin. J. Semicond. 2001, 22(9): 1171
Chin. J. Semicond. 2001, 22(9): 1176
Chin. J. Semicond. 2001, 22(9): 1182
Chin. J. Semicond. 2001, 22(9): 1188
Chin. J. Semicond. 2001, 22(9): 1191
Chin. J. Semicond. 2001, 22(9): 1197
Chin. J. Semicond. 2001, 22(9): 1202
Chin. J. Semicond. 2001, 22(9): 1207
Chin. J. Semicond. 2001, 22(9): 1212
Chin. J. Semicond. 2001, 22(9): 1217
Chin. J. Semicond. 2001, 22(9): 1222
Chin. J. Semicond. 2001, 22(9): 1226