用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性结果的比较(英文)
Chin. J. Semicond. 2002, 23(2): 113
Chin. J. Semicond. 2002, 23(2): 120
热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)
Chin. J. Semicond. 2002, 23(2): 124
基于对称螺旋型电感和差分二极管的2.4GHz CMOS正交输出压控振荡器(英文)
Chin. J. Semicond. 2002, 23(2): 131
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Chin. J. Semicond. 2002, 23(2): 157
立方相Al_xGa_(1-x)N/GaAs(100)的MOCVD外延生长
Chin. J. Semicond. 2002, 23(2): 161
Chin. J. Semicond. 2002, 23(2): 165
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Chin. J. Semicond. 2002, 23(2): 174
Chin. J. Semicond. 2002, 23(2): 178
由等价掺杂转换理论得到非对称线性缓变P-N结的击穿特性(英文)
Chin. J. Semicond. 2002, 23(2): 183
基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型
Chin. J. Semicond. 2002, 23(2): 188
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Chin. J. Semicond. 2002, 23(2): 203
HF/CrO_3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备
Chin. J. Semicond. 2002, 23(2): 208
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