Chin. J. Semicond. 2002, 23(8): 785
Chin. J. Semicond. 2002, 23(8): 794
Si(100)衬底上高质量3C-SiC的改良外延生长(英文)
Chin. J. Semicond. 2002, 23(8): 800
Chin. J. Semicond. 2002, 23(8): 805
大功率808nm AlGaAs/GaAs宽波导量子阱激光二极管(英文)
Chin. J. Semicond. 2002, 23(8): 809
Chin. J. Semicond. 2002, 23(8): 813
Chin. J. Semicond. 2002, 23(8): 817
Chin. J. Semicond. 2002, 23(8): 825
硅基衬底Ba_(0.5)Sr_(0.5)TiO_3厚膜制备的Sol-gel新方法
Chin. J. Semicond. 2002, 23(8): 830
Chin. J. Semicond. 2002, 23(8): 835
Chin. J. Semicond. 2002, 23(8): 840
Chin. J. Semicond. 2002, 23(8): 846
Chin. J. Semicond. 2002, 23(8): 852
Chin. J. Semicond. 2002, 23(8): 855
Chin. J. Semicond. 2002, 23(8): 861
Chin. J. Semicond. 2002, 23(8): 867
Chin. J. Semicond. 2002, 23(8): 874
GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较
Chin. J. Semicond. 2002, 23(8): 881
Chin. J. Semicond. 2002, 23(8): 886
Chin. J. Semicond. 2002, 23(8): 892