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Volume 26, Issue 10, Oct 2005
Table of Content
CONTENTS
X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD
Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y
Chin. J. Semicond.  2005, 26(10): 1865-1870
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A DBRTD with a High PVCR and a Peak Current Density at Room Temperature
Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, and Ye Tianchun
Chin. J. Semicond.  2005, 26(10): 1871-1874
Abstract PDF

Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation
Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe
Chin. J. Semicond.  2005, 26(10): 1875-1880
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20Gb/s 1∶2 Demultiplexer in 0.18μm CMOS
Wang Gui, Wang Zhigong, Wang Huan, Ding Jingfeng, and Xiong Mingzhen
Chin. J. Semicond.  2005, 26(10): 1881-1885
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An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory
Sun Lei, Pang Huiqing, Pan Liyang, and Zhu Jun
Chin. J. Semicond.  2005, 26(10): 1886-1891
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A Linear CMOS OTA and Its Application to a 3.3V 20MHz High-Q gm-C Bandpass Filter
Wang, Bin, and, Yang, Huazhong
Chin. J. Semicond.  2005, 26(10): 1892-1897
Abstract PDF

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers
Deng Shengling, Huang Yongzhen, Jin Chaoyuan, and Yu Lijuan
Chin. J. Semicond.  2005, 26(10): 1898-1904
Abstract PDF

Design of an OP-AMP Based on a LDO Regulator
Fan, Hua, and, Feng, Quanyuan
Chin. J. Semicond.  2005, 26(10): 1905-1909
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A 2.4GHz Quadrature Output Frequency Synthesizer
Yi Xiaofeng, Fang Han, Yang Yujia, and Hong Zhiliang
Chin. J. Semicond.  2005, 26(10): 1910-1915
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Temporal Floorplanning Using Solution Space Smoothing Based on 3D-BSSG Structure
Zheng Shuyi, Dong Sheqin, and Hong Xianlong
Chin. J. Semicond.  2005, 26(10): 1916-1924
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柱型量子点中弱耦合磁极化子的激发态性质
赵翠兰, 丁朝华, 肖景林
Chin. J. Semicond.  2005, 26(10): 1925-1928
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GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命
宫箭, 梁希侠, 班士良
Chin. J. Semicond.  2005, 26(10): 1929-1933
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(GaN)n/(AlN)n应变层超晶格的电子结构
王新华, 王玲玲, 王怀玉, 邓辉球, 黄维清
Chin. J. Semicond.  2005, 26(10): 1934-1938
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GaN异质结的二维表面态
薛舫时
Chin. J. Semicond.  2005, 26(10): 1939-1944
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(NH4)2S硫化后ZnS/InP界面的电学特性
庄春泉, 汤英文, 黄杨程, 吕衍秋, 龚海梅
Chin. J. Semicond.  2005, 26(10): 1945-1948
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导带的非抛物线性对应变InxGa1-xAs/AlAs量子阱红外谱的影响
杨晓峰, 温廷敦, 张文栋
Chin. J. Semicond.  2005, 26(10): 1949-1953
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Cu(In,Ga)Se2材料成分对其电池性能的影响
刘芳芳, 何青, 李凤岩, 敖建平, 孙国忠, 周志强, 孙云
Chin. J. Semicond.  2005, 26(10): 1954-1958
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拓扑缺陷对碳纳米管电学性能的影响
张丽芳, 胡慧芳
Chin. J. Semicond.  2005, 26(10): 1959-1962
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ZnO/p-Si异质结的光电转换特性
段理, 林碧霞, 傅竹西, 蔡俊江, 张子俞
Chin. J. Semicond.  2005, 26(10): 1963-1967
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TLP应力下深亚微米GGNMOSFET特性的仿真
朱志炜, 郝跃
Chin. J. Semicond.  2005, 26(10): 1968-1974
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MOS结构热载子注入与总剂量辐照响应的相关性
余学峰, 任迪远, 艾尔肯, 张国强, 陆妩, 郭旗
Chin. J. Semicond.  2005, 26(10): 1975-1978
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八羟基喹啉锌非晶薄膜器件的制备和开关特性
时军朋, 温振超, 宋长安, 陈殷, 彭应全
Chin. J. Semicond.  2005, 26(10): 1979-1982
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用阱作高阻漂移区的LDMOS导通电阻的解析模型
孟坚, 高珊, 陈军宁, 柯导明, 孙伟锋, 时龙兴, 徐超
Chin. J. Semicond.  2005, 26(10): 1983-1988
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用于40Gb/s光接收机的0.2μm GaAs PHEMT分布放大器
郑远, 陈堂胜, 钱峰, 李拂晓, 邵凯
Chin. J. Semicond.  2005, 26(10): 1989-1994
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MS/RF CMOS工艺兼容的光电探测器
黄家乐, 毛陆虹, 陈弘达, 高鹏, 刘金彬, 雷晓荃
Chin. J. Semicond.  2005, 26(10): 1995-2000
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用于40Gb/s光电子器件的新型低成本硅基过渡热沉
熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅
Chin. J. Semicond.  2005, 26(10): 2001-2005
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一种改进的CMOS差分LC压控振荡器
李永峰, 张建辉
Chin. J. Semicond.  2005, 26(10): 2006-2009
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一种采用开关阶跃电容的压控振荡器(上):调谐特性的理论分析
唐长文, 何捷, 闵昊
Chin. J. Semicond.  2005, 26(10): 2010-2021
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低压低功耗CMOS带隙电压基准及启动电路设计
许长喜
Chin. J. Semicond.  2005, 26(10): 2022-2027
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LDMOS低功耗自恢复电平移位电路设计
邓兰萍, 王纪民
Chin. J. Semicond.  2005, 26(10): 2028-2031
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表征ULSI低介电常数互连材料机械特性的表面波频散特性
李志国, 肖夏, 张鑫慧, 姚素英
Chin. J. Semicond.  2005, 26(10): 2032-2037
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深亚微米HCI模型参数多目标全域提取方法
李康, 郝跃, 刘红侠, 马晓华, 马佩军
Chin. J. Semicond.  2005, 26(10): 2038-2043
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128×160元GaAs/AlGaAs多量子阱长波红外焦平面阵列
苏艳梅, 种明, 张艳冰, 胡小燕, 孙永伟, 赵伟, 陈良惠
Chin. J. Semicond.  2005, 26(10): 2044-2047
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