Journal of Semiconductors

Archive

Volume 26, Issue 10, Oct 2005

CONTENTS

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y

Chin. J. Semicond. 2005, 26(10): 1865

A DBRTD with a High PVCR and a Peak Current Density at Room Temperature

Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, and Ye Tianchun

Chin. J. Semicond. 2005, 26(10): 1871

Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation

Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe

Chin. J. Semicond. 2005, 26(10): 1875

20Gb/s 1∶2 Demultiplexer in 0.18μm CMOS

Wang Gui, Wang Zhigong, Wang Huan, Ding Jingfeng, and Xiong Mingzhen

Chin. J. Semicond. 2005, 26(10): 1881

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Sun Lei, Pang Huiqing, Pan Liyang, and Zhu Jun

Chin. J. Semicond. 2005, 26(10): 1886

A Linear CMOS OTA and Its Application to a 3.3V 20MHz High-Q gm-C Bandpass Filter

Wang, Bin, and, Yang, Huazhong

Chin. J. Semicond. 2005, 26(10): 1892

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Deng Shengling, Huang Yongzhen, Jin Chaoyuan, and Yu Lijuan

Chin. J. Semicond. 2005, 26(10): 1898

Design of an OP-AMP Based on a LDO Regulator

Fan, Hua, and, Feng, Quanyuan

Chin. J. Semicond. 2005, 26(10): 1905

A 2.4GHz Quadrature Output Frequency Synthesizer

Yi Xiaofeng, Fang Han, Yang Yujia, and Hong Zhiliang

Chin. J. Semicond. 2005, 26(10): 1910

Temporal Floorplanning Using Solution Space Smoothing Based on 3D-BSSG Structure

Zheng Shuyi, Dong Sheqin, and Hong Xianlong

Chin. J. Semicond. 2005, 26(10): 1916

柱型量子点中弱耦合磁极化子的激发态性质

赵翠兰, 丁朝华, 肖景林

Chin. J. Semicond. 2005, 26(10): 1925

GaAs-Al_xGa_1-xAs双势垒结构中电子共振隧穿寿命

宫箭, 梁希侠, 班士良

Chin. J. Semicond. 2005, 26(10): 1929

(GaN)_n/(AlN)_n应变层超晶格的电子结构

王新华, 王玲玲, 王怀玉, 邓辉球, 黄维清

Chin. J. Semicond. 2005, 26(10): 1934

GaN异质结的二维表面态

薛舫时

Chin. J. Semicond. 2005, 26(10): 1939

(NH4)₂S硫化后ZnS/InP界面的电学特性

庄春泉, 汤英文, 黄杨程, 吕衍秋, 龚海梅

Chin. J. Semicond. 2005, 26(10): 1945

导带的非抛物线性对应变InxGa1-xAs/AlAs量子阱红外谱的影响

杨晓峰, 温廷敦, 张文栋

Chin. J. Semicond. 2005, 26(10): 1949

Cu(In,Ga)Se₂材料成分对其电池性能的影响

刘芳芳, 何青, 李凤岩, 敖建平, 孙国忠, 周志强, 孙云

Chin. J. Semicond. 2005, 26(10): 1954

拓扑缺陷对碳纳米管电学性能的影响

张丽芳, 胡慧芳

Chin. J. Semicond. 2005, 26(10): 1959

ZnO/p-Si异质结的光电转换特性

段理, 林碧霞, 傅竹西, 蔡俊江, 张子俞

Chin. J. Semicond. 2005, 26(10): 1963

TLP应力下深亚微米GGNMOSFET特性的仿真

朱志炜, 郝跃

Chin. J. Semicond. 2005, 26(10): 1968

MOS结构热载子注入与总剂量辐照响应的相关性

余学峰, 任迪远, 艾尔肯, 张国强, 陆妩, 郭旗

Chin. J. Semicond. 2005, 26(10): 1975

八羟基喹啉锌非晶薄膜器件的制备和开关特性

时军朋, 温振超, 宋长安, 陈殷, 彭应全

Chin. J. Semicond. 2005, 26(10): 1979

用阱作高阻漂移区的LDMOS导通电阻的解析模型

孟坚, 高珊, 陈军宁, 柯导明, 孙伟锋, 时龙兴, 徐超

Chin. J. Semicond. 2005, 26(10): 1983

用于40Gb/s光接收机的0.2μm GaAs PHEMT分布放大器

郑远, 陈堂胜, 钱峰, 李拂晓, 邵凯

Chin. J. Semicond. 2005, 26(10): 1989

MS/RF CMOS工艺兼容的光电探测器

黄家乐, 毛陆虹, 陈弘达, 高鹏, 刘金彬, 雷晓荃

Chin. J. Semicond. 2005, 26(10): 1995

用于40Gb/s光电子器件的新型低成本硅基过渡热沉

熊兵, 王健, 蔡鹏飞, 田建柏, 孙长征, 罗毅

Chin. J. Semicond. 2005, 26(10): 2001

一种改进的CMOS差分LC压控振荡器

李永峰, 张建辉

Chin. J. Semicond. 2005, 26(10): 2006

一种采用开关阶跃电容的压控振荡器(上):调谐特性的理论分析

唐长文, 何捷, 闵昊

Chin. J. Semicond. 2005, 26(10): 2010

低压低功耗CMOS带隙电压基准及启动电路设计

许长喜

Chin. J. Semicond. 2005, 26(10): 2022

LDMOS低功耗自恢复电平移位电路设计

邓兰萍, 王纪民

Chin. J. Semicond. 2005, 26(10): 2028

表征ULSI低介电常数互连材料机械特性的表面波频散特性

李志国, 肖夏, 张鑫慧, 姚素英

Chin. J. Semicond. 2005, 26(10): 2032

深亚微米HCI模型参数多目标全域提取方法

李康, 郝跃, 刘红侠, 马晓华, 马佩军

Chin. J. Semicond. 2005, 26(10): 2038

128×160元GaAs/AlGaAs多量子阱长波红外焦平面阵列

苏艳梅, 种明, 张艳冰, 胡小燕, 孙永伟, 赵伟, 陈良惠

Chin. J. Semicond. 2005, 26(10): 2044