Chin. J. Semicond. 2005, 26(2): 225
Measurements of Carrier Confinement at β-FeSi2-Si Heterojunction by Electroluminescence
Chin. J. Semicond. 2005, 26(2): 230
Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs
Chin. J. Semicond. 2005, 26(2): 234
Design and Fabrication of Schottky Diode with Standard CMOS Process
Chin. J. Semicond. 2005, 26(2): 238
Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile
Chin. J. Semicond. 2005, 26(2): 243
Chin. J. Semicond. 2005, 26(2): 250
Design,Fabrication,and Testing of SingleSide Alignment of 16×0.8nm Arrayed Waveguide Grating
Chin. J. Semicond. 2005, 26(2): 254
Analysis on Characteristic of Static Induction Transistor Using Mirror Method
Chin. J. Semicond. 2005, 26(2): 258
Fabrication of Ultrathin SiO2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate
Chin. J. Semicond. 2005, 26(2): 266
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
Chin. J. Semicond. 2005, 26(2): 271
An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides
Chin. J. Semicond. 2005, 26(2): 276
Bulk-Silicon Resonant Accelerometer
Chin. J. Semicond. 2005, 26(2): 281
Synthesis Scheme for Low Power Designs Under Timing Constraints
Chin. J. Semicond. 2005, 26(2): 287
Chin. J. Semicond. 2005, 26(2): 294
Chin. J. Semicond. 2005, 26(2): 299
Chin. J. Semicond. 2005, 26(2): 304
InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质
Chin. J. Semicond. 2005, 26(2): 309
Chin. J. Semicond. 2005, 26(2): 314
Chin. J. Semicond. 2005, 26(2): 319
Chin. J. Semicond. 2005, 26(2): 324
Chin. J. Semicond. 2005, 26(2): 329
Chin. J. Semicond. 2005, 26(2): 335
Chin. J. Semicond. 2005, 26(2): 341
Chin. J. Semicond. 2005, 26(2): 345
Chin. J. Semicond. 2005, 26(2): 349
Chin. J. Semicond. 2005, 26(2): 354
Chin. J. Semicond. 2005, 26(2): 357
Chin. J. Semicond. 2005, 26(2): 363
Chin. J. Semicond. 2005, 26(2): 368
Chin. J. Semicond. 2005, 26(2): 373
Chin. J. Semicond. 2005, 26(2): 379
一种适用于10/100MHz Base TX以太网的新型发射电路
Chin. J. Semicond. 2005, 26(2): 385
Chin. J. Semicond. 2005, 26(2): 390
Chin. J. Semicond. 2005, 26(2): 395
Chin. J. Semicond. 2005, 26(2): 399
Chin. J. Semicond. 2005, 26(2): 406
Chin. J. Semicond. 2005, 26(2): 410
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes
Chin. J. Semicond. 2005, 26(2): 414