MBE Growth of High Electron Mobility InP Epilayers
Chin. J. Semicond. 2005, 26(8): 1485
Design and Fabrication of a High-Voltage nMOS Device
Chin. J. Semicond. 2005, 26(8): 1489
Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT
Chin. J. Semicond. 2005, 26(8): 1495
High Speed VCSEL-Based Parallel Optical Transmission Modules
Chin. J. Semicond. 2005, 26(8): 1500
Chin. J. Semicond. 2005, 26(8): 1504
Monte Carlo Analysis of Yield and Performance of a GaAs Flash ADC
Chin. J. Semicond. 2005, 26(8): 1509
Yield Modeling of Rectangular Defect Outline
Chin. J. Semicond. 2005, 26(8): 1514
Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors
Chin. J. Semicond. 2005, 26(8): 1519
A CMOS Fully Integrated Frequency Synthesizer with Stability Compensation
Chin. J. Semicond. 2005, 26(8): 1524
2.5Gb/s Monolithic IC of Clock Recovery,Data Decision,and 1∶4 Demultiplexer
Chin. J. Semicond. 2005, 26(8): 1532
A Novel Multi-Functional Leakage Current Protector IC Design
Chin. J. Semicond. 2005, 26(8): 1537
Chin. J. Semicond. 2005, 26(8): 1543
Chin. J. Semicond. 2005, 26(8): 1549
Chin. J. Semicond. 2005, 26(8): 1553
Chin. J. Semicond. 2005, 26(8): 1558
Chin. J. Semicond. 2005, 26(8): 1562
Chin. J. Semicond. 2005, 26(8): 1567
Chin. J. Semicond. 2005, 26(8): 1572
Si(111)衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系
Chin. J. Semicond. 2005, 26(8): 1577
Chin. J. Semicond. 2005, 26(8): 1582
Chin. J. Semicond. 2005, 26(8): 1586
Chin. J. Semicond. 2005, 26(8): 1591
Chin. J. Semicond. 2005, 26(8): 1595
Chin. J. Semicond. 2005, 26(8): 1599
Chin. J. Semicond. 2005, 26(8): 1605
Chin. J. Semicond. 2005, 26(8): 1610
Chin. J. Semicond. 2005, 26(8): 1616
Chin. J. Semicond. 2005, 26(8): 1619
Chin. J. Semicond. 2005, 26(8): 1623
Chin. J. Semicond. 2005, 26(8): 1629
Chin. J. Semicond. 2005, 26(8): 1635
Chin. J. Semicond. 2005, 26(8): 1640
Chin. J. Semicond. 2005, 26(8): 1646
Chin. J. Semicond. 2005, 26(8): 1653
Chin. J. Semicond. 2005, 26(8): 1656
Chin. J. Semicond. 2005, 26(8): 1662
Chin. J. Semicond. 2005, 26(8): 1667
Chin. J. Semicond. 2005, 26(8): 1671
Chin. J. Semicond. 2005, 26(8): 1676