Archive

Volume 26, Issue 9, Sep 2005

• CONTENTS

  Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films

  Wang Xiaofeng, Huang Fengyi, Sun Guosheng, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Haiou, and Duan Xiaofeng

  Chin. J. Semicond.  2005, 26(9): 1681
  

  Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm

  Pan Jiaoqing, Wang Wei, Zhu Hongliang, Zhao Qian, Wang Baojun, Zhou Fan, and Wang Lufeng

  Chin. J. Semicond.  2005, 26(9): 1688
  

  High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

  Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, Li Min, and Chang Benkang

  Chin. J. Semicond.  2005, 26(9): 1692
  

  A Into-Plane Rotating Micromirror Actuated by a Hybrid Electrostatic Driving Structure

  Wu Wengang, Chen Qinghua, Yin Dongqing, Yan Guizhen, Chen Zhangyuan, Hao Yilong, and Xu Anshi

  Chin. J. Semicond.  2005, 26(9): 1698
  

  Low Phase Noise Quadrature Oscillators Using New Injection Locked Technique

  Chi Baoyong, Zhu Xiaolei, Wang Ziqiang, and Wang Zhihua

  Chin. J. Semicond.  2005, 26(9): 1705
  

  Design of Down Scalers in Mixed-Signal GHz Frequency Synthesizer

  Xu Yong, Wang Zhigong, Qiu Yinghua, Li Zhiqun, Hu Qingsheng, and Min Rui

  Chin. J. Semicond.  2005, 26(9): 1711
  

  Performance Analysis of RF Spiral Inductor with Gradually Changed Metal Width and Space

  Wang Yong, Shi Yanling, Liu Yun, Ding Yanfang, Tang Shenqun, Zhu Jun, Chen Shoumian, and Zhao Yuhang

  Chin. J. Semicond.  2005, 26(9): 1716
  

  Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator

  Liu Qibin, Lin Qing, Liu Weili, Feng Songlin, and Song Zhitang

  Chin. J. Semicond.  2005, 26(9): 1722
  

  Capacitive Microwave MEMS Switch

  Zhang Jinwen, Jin Yufeng, Hao Yilong, Wang Wei, Tian Dayu, and Wang Yangyuan

  Chin. J. Semicond.  2005, 26(9): 1727
  

  A 2.4GHz CMOS Monolithic Transceiver Front-End for IEEE 802.11b Wireless LAN Applications

  Chi Baoyong, Shi Bingxue, and Wang Zhihua

  Chin. J. Semicond.  2005, 26(9): 1731
  

  应变异质结构中超薄中间层的应变协调作用

  陈涌海, 杨少延, 王占国

  Chin. J. Semicond.  2005, 26(9): 1740
  

  超晶格半导体材料的光磁电效应(I)

  罗诗裕, 邵明珠

  Chin. J. Semicond.  2005, 26(9): 1744
  

  快速热退火对高应变InGaAs/Ga As量子阱的影响

  苗振华, 徐应强, 张石勇, 吴东海, 赵欢, 牛智川

  Chin. J. Semicond.  2005, 26(9): 1749
  

  原生直拉单晶硅中的铜沉淀规律席珍强

  席珍强, 杨德仁, 陈君, 阙端麟, H.J.Moeller

  Chin. J. Semicond.  2005, 26(9): 1753
  

  碲锌镉晶片中位错与Te沉淀的透射电子显微分析

  曾冬梅, 王涛, 介万奇

  Chin. J. Semicond.  2005, 26(9): 1760
  

  复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响

  任丙彦, 赵龙, 傅洪波, 曹中谦, 张学强

  Chin. J. Semicond.  2005, 26(9): 1764
  

  导电流体在水平磁场中的粘度

  张雯, 刘彩池, 王海云

  Chin. J. Semicond.  2005, 26(9): 1768
  

  (111)晶向碲锌镉晶片双面腐蚀的对比

  刘从峰, 方维政, 涂步华, 孙士文, 杨建荣

  Chin. J. Semicond.  2005, 26(9): 1773
  

  聚合物/有机小分子异质结掺杂型电致发光二极管及其发射机制

  聂海, 张波, 唐先忠, 李元勋

  Chin. J. Semicond.  2005, 26(9): 1778
  

  一种新型结构的InGaP/GaAs负阻异质结晶体管

  郭维廉, 齐海涛, 张世林, 钟, 鸣, 梁惠来, 毛陆虹, 宋瑞良, 周均铭, 王文新, C.Jagadish, 傅岚

  Chin. J. Semicond.  2005, 26(9): 1783
  

  跨导为325mS/mm的AlGaN/GaN HFET器件

  张志国, 杨瑞霞, 王, 勇, 冯, 震, 杨克武

  Chin. J. Semicond.  2005, 26(9): 1789
  

  808nm InGaAsP单量子阱激光器激射波长的温度依赖性

  张永明, 钟景昌, 路国光, 秦, 莉, 赵英杰, 郝永芹, 姜晓光

  Chin. J. Semicond.  2005, 26(9): 1793
  

  1×32硅基二氧化硅阵列波导光栅的研制

  龙文华, 李广波, 贾科淼, 屈红昌, 唐衍哲, 吴亚明, 杨建义, 王跃林

  Chin. J. Semicond.  2005, 26(9): 1798
  

  C波段0.75mm AlGaN/GaN功率器件

  陈晓娟, 刘新宇, 和致经, 刘, 建, 吴德馨

  Chin. J. Semicond.  2005, 26(9): 1804
  

  一种适用于开关电容电路的MOS开关栅增压电路

  张剑云, 李建, 郭亚炜, 沈泊, 张卫

  Chin. J. Semicond.  2005, 26(9): 1808
  

  深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制

  刘红侠, 郝跃

  Chin. J. Semicond.  2005, 26(9): 1813
  

  埋空隙PSOI结构的耐压分析

  段宝兴, 张波, 李肇基, 罗小蓉

  Chin. J. Semicond.  2005, 26(9): 1818
  

  LDMOS的局部电热效应分析

  李梅芝, 韦光萍, 陈星弼

  Chin. J. Semicond.  2005, 26(9): 1823
  

  一种抗辐照SOI反相器

  赵洪辰, 海潮和, 韩郑生, 钱鹤, 司红

  Chin. J. Semicond.  2005, 26(9): 1829
  

  逆导型GCT阻断特性的分析与设计

  王彩琳, 高, 勇, 张昌利

  Chin. J. Semicond.  2005, 26(9): 1833
  

  一种用于流水线模数转换器的电容失配校准方法

  李福乐, 王红梅, 李冬梅, 王志华

  Chin. J. Semicond.  2005, 26(9): 1838
  

  ISO 14443单芯片读卡机放大、滤波和量化电路的设计

  陈良生, 洪志良, 李联

  Chin. J. Semicond.  2005, 26(9): 1843
  

  一种DC-DC芯片内建可测性设计

  王红义, 来新泉, 李玉山, 陈富吉

  Chin. J. Semicond.  2005, 26(9): 1848
  

  一种低延迟低功耗的片上全局互连方法

  刘祥远, 陈书明

  Chin. J. Semicond.  2005, 26(9): 1854
  

  Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

  Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang, Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Sh

  Chin. J. Semicond.  2005, 26(9): 1860
  

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