Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films
Chin. J. Semicond. 2005, 26(9): 1681
Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm
Chin. J. Semicond. 2005, 26(9): 1688
Chin. J. Semicond. 2005, 26(9): 1692
A Into-Plane Rotating Micromirror Actuated by a Hybrid Electrostatic Driving Structure
Chin. J. Semicond. 2005, 26(9): 1698
Low Phase Noise Quadrature Oscillators Using New Injection Locked Technique
Chin. J. Semicond. 2005, 26(9): 1705
Design of Down Scalers in Mixed-Signal GHz Frequency Synthesizer
Chin. J. Semicond. 2005, 26(9): 1711
Performance Analysis of RF Spiral Inductor with Gradually Changed Metal Width and Space
Chin. J. Semicond. 2005, 26(9): 1716
Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator
Chin. J. Semicond. 2005, 26(9): 1722
Capacitive Microwave MEMS Switch
Chin. J. Semicond. 2005, 26(9): 1727
A 2.4GHz CMOS Monolithic Transceiver Front-End for IEEE 802.11b Wireless LAN Applications
Chin. J. Semicond. 2005, 26(9): 1731
Chin. J. Semicond. 2005, 26(9): 1740
Chin. J. Semicond. 2005, 26(9): 1744
Chin. J. Semicond. 2005, 26(9): 1749
Chin. J. Semicond. 2005, 26(9): 1753
Chin. J. Semicond. 2005, 26(9): 1760
复合式热屏对Φ200mm CZSi单晶生长速率和氧含量的影响
Chin. J. Semicond. 2005, 26(9): 1764
Chin. J. Semicond. 2005, 26(9): 1768
Chin. J. Semicond. 2005, 26(9): 1773
Chin. J. Semicond. 2005, 26(9): 1778
Chin. J. Semicond. 2005, 26(9): 1783
Chin. J. Semicond. 2005, 26(9): 1789
808nm InGaAsP单量子阱激光器激射波长的温度依赖性
Chin. J. Semicond. 2005, 26(9): 1793
Chin. J. Semicond. 2005, 26(9): 1798
Chin. J. Semicond. 2005, 26(9): 1804
Chin. J. Semicond. 2005, 26(9): 1808
Chin. J. Semicond. 2005, 26(9): 1813
Chin. J. Semicond. 2005, 26(9): 1818
Chin. J. Semicond. 2005, 26(9): 1823
Chin. J. Semicond. 2005, 26(9): 1829
Chin. J. Semicond. 2005, 26(9): 1833
Chin. J. Semicond. 2005, 26(9): 1838
Chin. J. Semicond. 2005, 26(9): 1843
Chin. J. Semicond. 2005, 26(9): 1848
Chin. J. Semicond. 2005, 26(9): 1854
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes
Chin. J. Semicond. 2005, 26(9): 1860