Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate
Chin. J. Semicond. 2006, 27(1): 1
Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor
Chin. J. Semicond. 2006, 27(1): 5
Chin. J. Semicond. 2006, 27(1): 9
An Ultra Wideband VHF CMOS LC VCO
Chin. J. Semicond. 2006, 27(1): 14
12Gb/s 0.25μm CMOS Low-Power 1∶4 Demultiplexer
Chin. J. Semicond. 2006, 27(1): 19
A Novel Algorithm to Extract Weighted Critical Area
Chin. J. Semicond. 2006, 27(1): 24
Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices
Chin. J. Semicond. 2006, 27(1): 30
Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET
Chin. J. Semicond. 2006, 27(1): 35
Analysis and Design of a ΔΣ Modulator for Fractional-N Frequency Synthesis
Chin. J. Semicond. 2006, 27(1): 41
A 12-Channel,30Gb/s,0.18μm CMOS Front-End Amplifier for Parallel Optic-Fiber Receivers
Chin. J. Semicond. 2006, 27(1): 47
Elmore Delay Estimation of Two Adjacent Coupling Interconnects
Chin. J. Semicond. 2006, 27(1): 54
Calculation of Microband Breadth of GaAs/AlGaAs Superlattice
Chin. J. Semicond. 2006, 27(1): 59
Chin. J. Semicond. 2006, 27(1): 63
Chin. J. Semicond. 2006, 27(1): 68
Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si
Chin. J. Semicond. 2006, 27(1): 73
Effect of H2 on Low Temperature Selective Growth of Si1-xGex by UHV/CVD
Chin. J. Semicond. 2006, 27(1): 78
Influence of Annealing Temperature on Luminescence of β-FeSi2 Particles Embedded in Silicon
Chin. J. Semicond. 2006, 27(1): 82
Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate
Chin. J. Semicond. 2006, 27(1): 86
Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD
Chin. J. Semicond. 2006, 27(1): 91
Photoresponse of ZnO Single Crystal Film
Chin. J. Semicond. 2006, 27(1): 96
Ray Tracing Simulation of InGaN/GaN Light-Emitting Diodes with Parabolic Substrates
Chin. J. Semicond. 2006, 27(1): 100
Accurate Measurement of Forward Electrical Characteristics in Laser Diodes
Chin. J. Semicond. 2006, 27(1): 105
Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents
Chin. J. Semicond. 2006, 27(1): 110
A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench
Chin. J. Semicond. 2006, 27(1): 115
Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices
Chin. J. Semicond. 2006, 27(1): 121
Design and Implementation of a Novel Chip for Full Digital Three-Phase SPWM Signal Generation
Chin. J. Semicond. 2006, 27(1): 126
Chin. J. Semicond. 2006, 27(1): 132
A Low-Jitter and Low-Power Frequency Synthesizer Applied to 1000Base-T Ethernet
Chin. J. Semicond. 2006, 27(1): 137
Chin. J. Semicond. 2006, 27(1): 143
A MEMS Based Focus Plane Array for Infrared Imaging
Chin. J. Semicond. 2006, 27(1): 150
Effects of Die Bonding on MEMS Characteristics:Cell Library
Chin. J. Semicond. 2006, 27(1): 156
Effect of Load Stiffness on the Output of Thermal Microactuators
Chin. J. Semicond. 2006, 27(1): 162
Transmission Lines Embedded in Silicon Oxide Layers on Silicon Wafers
Chin. J. Semicond. 2006, 27(1): 168
Direct Tunneling Effect in SiC Schottky Contacts
Chin. J. Semicond. 2006, 27(1): 174
Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells
Chin. J. Semicond. 2006, 27(1): 178
A Modified Model for Etching a Sacrificial Layer in Bubble Structures
Chin. J. Semicond. 2006, 27(1): 183