Journal of Semiconductors

Archive

Volume 27, Issue 10, Oct 2006

LETTERS

Fabrication of a Silicon-Based Microprobe for Neural Interface Applications

Sui Xiaohong, Zhang Ruoxin, Pei Weihua, Lu Lin, Chen Hongda

Chin. J. Semicond. 2006, 27(10): 1703

A Low-Power High-Frequency CMOS Peak Detector

Li Xuechu, Gao Qingyun, Qin Shicai

Chin. J. Semicond. 2006, 27(10): 1707
PAPERS

A New Method to Investigate InGaAsP Single-Photon AvalancheDiodes Using a Digital Sampling Oscilloscope

Liu Wei, Yang Fuhua, Wu Meng

Chin. J. Semicond. 2006, 27(10): 1711

Polar Quasi-Confined Optical Phonon Modes in Wurtzite Quasi-One-Dimensional GaN/AlxGa1-xN Quantum Well Wires

Zhang Li

Chin. J. Semicond. 2006, 27(10): 1717

2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs

Ji Feng, Xu Jingping, Lai P T, Chen Weibing, Li Yanping

Chin. J. Semicond. 2006, 27(10): 1725

A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor

Yu Jinyong, Yan Beiping, Su Shubing, Liu Xunchun, Wang Runmei, Xu Anhuai, Qi Ming, Liu Xinyu

Chin. J. Semicond. 2006, 27(10): 1732

A Novel Clock Feedthrough Frequency Compensation forFast-Settling of Folded-Cascode OTA

Ning Ning, Yu Qi, Wang Xiangzhan, Dai Guanghao, Liu Yuan, Yang Mohua

Chin. J. Semicond. 2006, 27(10): 1737

A Current-Mode DC-DC Buck Converter with High Stability and Fast Dynamic Response

Chen Dongpo, He Lenian, Yan Xiaolang

Chin. J. Semicond. 2006, 27(10): 1742

Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC

Xiao Zhiqiang, Hong Genshen, Zhang Bo, Liu Zhongli

Chin. J. Semicond. 2006, 27(10): 1750

Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots

Li Zhixin, Xiao Jinglin

Chin. J. Semicond. 2006, 27(10): 1755

Defects and Their Influence on Properties of Bulk ZnO Single Crystal

Wei Xuecheng, Zhao Youwen, Dong Zhiyuan, Li Jinmin

Chin. J. Semicond. 2006, 27(10): 1759

Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures

Xia Jiaozhen, Lu Hui, Wang Pu, Xu Xiaofeng, Du Minggui

Chin. J. Semicond. 2006, 27(10): 1763

Plasma Enhanced Chemical Vapor Deposition and UltravioletLuminescence of Nanocrystalline 6H-SiC Thin Films

Yu Wei, Cui Shuangkui, , Lu Wanbing, Wang Chunsheng

Chin. J. Semicond. 2006, 27(10): 1767

Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution

Zhang Xuhui, Tao Chunlan, Zhang Fujia, Liu Yiyang, Zhang Haoli

Chin. J. Semicond. 2006, 27(10): 1771

Fabrication of Silicon-Based PZT Films Compatible with MEMS

Li Junhong, Wang Chenghao, Huang Xin, Xu Lian

Chin. J. Semicond. 2006, 27(10): 1776

Solar Cells Deposited on Stainless Steel Substrate

Zhang Li, He Qing, Xu Chuanming, Xue Yuming, Wang Chunjing, Shi Chengying, Xiao Jianping, Li Changjian,

Chin. J. Semicond. 2006, 27(10): 1781

Planarizing Deposited SiO2 Thin Films Using ISSG Annealing Technology

Tao Kai, Sun Zhenhai, Sun Ling, Guo Guochao

Chin. J. Semicond. 2006, 27(10): 1785

Piezoresistive Properties of Resonant Tunneling Diodes

Mao Haiyang, Xiong Jijun, Zhang Wendong, Xue Chenyang, Sang Shengbo, Bao Aida

Chin. J. Semicond. 2006, 27(10): 1789

Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors

Meng Zhiguo, Wong Man, Wu Chunya, Li Juan, Kwok H S, Xiong Shaozhen, Zhang Fang

Chin. J. Semicond. 2006, 27(10): 1794

An X-Band PHEMT MMIC Power Amplifier

Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu

Chin. J. Semicond. 2006, 27(10): 1800

Ku-Band 20W GaAs Power PHEMT

Zhong Shichang, Chen Tangsheng

Chin. J. Semicond. 2006, 27(10): 1804

Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers

Cai Shuicheng, Wang Zhigong, Gao Jianjun, Zhu En

Chin. J. Semicond. 2006, 27(10): 1808

A New SOI-LDMOS with Folded Silicon for Very Low On-Resistance

Duan Baoxing, Zhang Bo, Li Zhaoji

Chin. J. Semicond. 2006, 27(10): 1814

Optimization of Breakdown Voltage and On-Resistance Based on the Analysisof the Boundary Curvature of the Drain Region in RF RESURF LDMOS

Chi Yaqing, Hao Yue, Feng Hui, Fang Liang

Chin. J. Semicond. 2006, 27(10): 1818

Ohmic Contact to an AlGaN/GaN Heterostructure

Yang Yan, Wang Wenbo, Hao Yue

Chin. J. Semicond. 2006, 27(10): 1823

A Novel Semi-Insulation Bonding SOI Structure

Tan Kaizhou, Feng Jian, Liu Yong, Xu Shiliu, Yang Mohua, Li Zhaoji, Zhang Zhengfan, Liu Yukui, He Kaiquan

Chin. J. Semicond. 2006, 27(10): 1828

A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer

Luo Xiaorong, Li Zhaoji, Zhang Bo

Chin. J. Semicond. 2006, 27(10): 1832

CMOS Implementation of a Wideband Low Phase Noise PLL Frequency Synthesizer

Chen Zuotian, Wu Xuan, Tang Shoulong, Wu Jianhui

Chin. J. Semicond. 2006, 27(10): 1838

Design and Optimization of SOI Piezoresistive MicrocantileverSensors for Use in Surface Stress Measurement

Zhuang Zhiwei, Wang Zheyao, Liu Litian

Chin. J. Semicond. 2006, 27(10): 1844

Analysis of the Unbalanced State of an Interferometer Based on an SOA

Li Yajie, Wu Chongqing, Wang Yongjun, , Li Yun

Chin. J. Semicond. 2006, 27(10): 1851

Phosphate Glass Waveguide Amplifiers

Zhang Dan, Liu Ke, Zhang Daming, Cheng Chuanhui, Zhang Xizhen, Zhang Haiming, Pan Yubin

Chin. J. Semicond. 2006, 27(10): 1857

A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector

You Da, Xu Jintong, Tang Yingwen, He Zheng, Xu Yunhua, Gong Haimei

Chin. J. Semicond. 2006, 27(10): 1861

An Ultralow-Voltage,Low-Power Baseband Processor for UHF RFID Tags

He Yan, Hu Jianyun, Min Hao

Chin. J. Semicond. 2006, 27(10): 1866

Passive Component Models for GaAs MMICs

Shen Huajun, Chen Yanhu, Yan Beiping, Yang Wei, Ge Ji, Wang Xiantai, Liu Xinyu, Wu Dexin

Chin. J. Semicond. 2006, 27(10): 1872

Temperature Analysis of Electrothermal Microactuators with a Nodal Analysis Model Built Based on the Weighted Residue Method

Li Rengang, Huang Qing'an, Li Weihua

Chin. J. Semicond. 2006, 27(10): 1880