Fabrication of a Silicon-Based Microprobe for Neural Interface Applications
Chin. J. Semicond. 2006, 27(10): 1703
A Low-Power High-Frequency CMOS Peak Detector
Chin. J. Semicond. 2006, 27(10): 1707
Chin. J. Semicond. 2006, 27(10): 1711
Chin. J. Semicond. 2006, 27(10): 1717
2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs
Chin. J. Semicond. 2006, 27(10): 1725
A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor
Chin. J. Semicond. 2006, 27(10): 1732
A Novel Clock Feedthrough Frequency Compensation forFast-Settling of Folded-Cascode OTA
Chin. J. Semicond. 2006, 27(10): 1737
A Current-Mode DC-DC Buck Converter with High Stability and Fast Dynamic Response
Chin. J. Semicond. 2006, 27(10): 1742
Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC
Chin. J. Semicond. 2006, 27(10): 1750
Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots
Chin. J. Semicond. 2006, 27(10): 1755
Defects and Their Influence on Properties of Bulk ZnO Single Crystal
Chin. J. Semicond. 2006, 27(10): 1759
Chin. J. Semicond. 2006, 27(10): 1763
Chin. J. Semicond. 2006, 27(10): 1767
Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution
Chin. J. Semicond. 2006, 27(10): 1771
Fabrication of Silicon-Based PZT Films Compatible with MEMS
Chin. J. Semicond. 2006, 27(10): 1776
Solar Cells Deposited on Stainless Steel Substrate
Chin. J. Semicond. 2006, 27(10): 1781
Planarizing Deposited SiO2 Thin Films Using ISSG Annealing Technology
Chin. J. Semicond. 2006, 27(10): 1785
Piezoresistive Properties of Resonant Tunneling Diodes
Chin. J. Semicond. 2006, 27(10): 1789
Chin. J. Semicond. 2006, 27(10): 1794
An X-Band PHEMT MMIC Power Amplifier
Chin. J. Semicond. 2006, 27(10): 1800
Chin. J. Semicond. 2006, 27(10): 1804
Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers
Chin. J. Semicond. 2006, 27(10): 1808
A New SOI-LDMOS with Folded Silicon for Very Low On-Resistance
Chin. J. Semicond. 2006, 27(10): 1814
Chin. J. Semicond. 2006, 27(10): 1818
Ohmic Contact to an AlGaN/GaN Heterostructure
Chin. J. Semicond. 2006, 27(10): 1823
A Novel Semi-Insulation Bonding SOI Structure
Chin. J. Semicond. 2006, 27(10): 1828
A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer
Chin. J. Semicond. 2006, 27(10): 1832
CMOS Implementation of a Wideband Low Phase Noise PLL Frequency Synthesizer
Chin. J. Semicond. 2006, 27(10): 1838
Chin. J. Semicond. 2006, 27(10): 1844
Analysis of the Unbalanced State of an Interferometer Based on an SOA
Chin. J. Semicond. 2006, 27(10): 1851
Phosphate Glass Waveguide Amplifiers
Chin. J. Semicond. 2006, 27(10): 1857
A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector
Chin. J. Semicond. 2006, 27(10): 1861
An Ultralow-Voltage,Low-Power Baseband Processor for UHF RFID Tags
Chin. J. Semicond. 2006, 27(10): 1866
Passive Component Models for GaAs MMICs
Chin. J. Semicond. 2006, 27(10): 1872
Chin. J. Semicond. 2006, 27(10): 1880