Chin. J. Semicond. 2006, 27(6): 959
0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz
Chin. J. Semicond. 2006, 27(6): 963
High-Power Distributed Feedback Laser Diodes Emitting at 820nm
Chin. J. Semicond. 2006, 27(6): 966
A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions
Chin. J. Semicond. 2006, 27(6): 970
Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS
Chin. J. Semicond. 2006, 27(6): 976
Characterization and Modeling of Finite-Ground Coplanar Waveguides in 0.13μm CMOS
Chin. J. Semicond. 2006, 27(6): 982
A 2.4GHz Low Power ASK Transmitter for Wireless Capsule Endoscope Applications
Chin. J. Semicond. 2006, 27(6): 988
An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags
Chin. J. Semicond. 2006, 27(6): 994
Design and Analysis of Analog Front-End of Passive RFID Transponders
Chin. J. Semicond. 2006, 27(6): 999
High-Speed,Robust CMOS Dynamic Circuit Design
Chin. J. Semicond. 2006, 27(6): 1006
Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses
Chin. J. Semicond. 2006, 27(6): 1012
Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics
Chin. J. Semicond. 2006, 27(6): 1016
Thermoelectric Properties of p-Type Rare-Earth Element Cerium-Filled Skutterudite CeyFexCo4-xSb12
Chin. J. Semicond. 2006, 27(6): 1021
Growth and Properties of Cd0.8Mn0.2Te Crystal
Chin. J. Semicond. 2006, 27(6): 1026
Study of Incubation Layers in Microcrystalline Silicon Solar Cells
Chin. J. Semicond. 2006, 27(6): 1030
Properties of a Photonic Crystal Microcavity
Chin. J. Semicond. 2006, 27(6): 1034
Calculation of the Efficiency of GaAs Quantum Well Solar Cells
Chin. J. Semicond. 2006, 27(6): 1038
GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment
Chin. J. Semicond. 2006, 27(6): 1042
Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon
Chin. J. Semicond. 2006, 27(6): 1046
Fabrication of ZnO Thin-Film Transistors by L-MBE
Chin. J. Semicond. 2006, 27(6): 1051
Correlations Between an AlN Insert Layer and Current Collapse in AlGaN/GaN HEMTs
Chin. J. Semicond. 2006, 27(6): 1055
Transport Current Model of SiGe HBT
Chin. J. Semicond. 2006, 27(6): 1059
A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant
Chin. J. Semicond. 2006, 27(6): 1064
Numerical Simulation and Analysis of SiGeC/Si Heterojunction Power Diodes
Chin. J. Semicond. 2006, 27(6): 1068
Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices
Chin. J. Semicond. 2006, 27(6): 1073
A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control
Chin. J. Semicond. 2006, 27(6): 1078
Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon
Chin. J. Semicond. 2006, 27(6): 1084
Optimum Design of PSJ for High-Voltage Devices
Chin. J. Semicond. 2006, 27(6): 1089
A K-Band MMIC Medium Power Amplifier for Automotive Radars
Chin. J. Semicond. 2006, 27(6): 1094
Large Two-Dimensional Photonic Band-Gaps Designed by Rapid Genetic Algorithms
Chin. J. Semicond. 2006, 27(6): 1098
Characteristic of a Vertically-Coupled Triple Microring Resonant Wavelength Multi/Demultiplexer
Chin. J. Semicond. 2006, 27(6): 1103
Diffraction Coupling of a Very Long Wavelength Quantum Well Infrared Photodetector Linear Array
Chin. J. Semicond. 2006, 27(6): 1109
Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices
Chin. J. Semicond. 2006, 27(6): 1115
Simulation and Optimization of FD SOI CMOS Devices at High Temperatures
Chin. J. Semicond. 2006, 27(6): 1120
Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips
Chin. J. Semicond. 2006, 27(6): 1125
A Highly Sensitive Local Curvature Metrology for Internal Stress Detection in Thin Films
Chin. J. Semicond. 2006, 27(6): 1129
Electromigration of SnAgCu Solder Interconnects
Chin. J. Semicond. 2006, 27(6): 1136
Raman Online Measurement of Stress Resulting from Micromachining
Chin. J. Semicond. 2006, 27(6): 1141
Fabrication of Micro Zone Plates by E-Beam and X-Ray Lithography
Chin. J. Semicond. 2006, 27(6): 1147