Archive

Volume 27, Issue 6, Jun 2006

• LETTERS

  Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

  Ma Long, Huang Yinglong, Zhang Yang, Wang Liangchen, Yang Fuhua, Zeng Yiping

  Chin. J. Semicond.  2006, 27(6): 959
  

  0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with f_T of 77GHz

  Zheng Yingkui, Liu Guoguo, He Zhijing, Liu Xinyu, Wu Dexin

  Chin. J. Semicond.  2006, 27(6): 963
  

  High-Power Distributed Feedback Laser Diodes Emitting at 820nm

  Fu Shenghui, Zhong Yuan, Song Guofeng, Chen Lianghui

  Chin. J. Semicond.  2006, 27(6): 966
  

  A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

  Ma Desheng, Shi Yin, Dai Fa Foster

  Chin. J. Semicond.  2006, 27(6): 970
  

• PAPERS

  Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

  Sun Weifeng, Yi Yangbo, Lu Shengli, Shi Longxing

  Chin. J. Semicond.  2006, 27(6): 976
  

  Characterization and Modeling of Finite-Ground Coplanar Waveguides in 0.13μm CMOS

  Chen Xu, Wang Zhigong

  Chin. J. Semicond.  2006, 27(6): 982
  

  A 2.4GHz Low Power ASK Transmitter for Wireless Capsule Endoscope Applications

  Han Shuguang, Chi Baoyong, Wang Zhihua

  Chin. J. Semicond.  2006, 27(6): 988
  

  An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags

  Yan Na, Tan Xi, Zhao Dixian, Min Hao

  Chin. J. Semicond.  2006, 27(6): 994
  

  Design and Analysis of Analog Front-End of Passive RFID Transponders

  Hu Jianyun, He Yan, Min Hao

  Chin. J. Semicond.  2006, 27(6): 999
  

  High-Speed,Robust CMOS Dynamic Circuit Design

  Lai Lianzhang, Tang Tingao, Lin Yinyin

  Chin. J. Semicond.  2006, 27(6): 1006
  

  Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses

  Zhang Guanjie, Xu Bo, Chen Yonghai, Yao Jianghong, Lin Yaowang, Shu Yongchun, Pi Biao, Xing Xiaodong, Liu Rubin, Shu Qiang, Wang Zhanguo, Xu Jingjun

  Chin. J. Semicond.  2006, 27(6): 1012
  

  Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

  Cen Zhanhong, Xu Jun, Li Xin, Li Wei, , Chen San, Liu Yansong, Huang Xinfan

  Chin. J. Semicond.  2006, 27(6): 1016
  

  Thermoelectric Properties of p-Type Rare-Earth Element Cerium-Filled Skutterudite CeyFexCo4-xSb12

  Wang Kun, Tang Xinfeng, Zhang Qingjie

  Chin. J. Semicond.  2006, 27(6): 1021
  

  Growth and Properties of Cd0.8Mn0.2Te Crystal

  Zhang Jijun, Jie Wanqi

  Chin. J. Semicond.  2006, 27(6): 1026
  

  Study of Incubation Layers in Microcrystalline Silicon Solar Cells

  Zhang Xiaodan, Zhao Ying, Gao Yantao, Zhu Feng, Wei Changchun, , Sun Jian, Geng Xinhua

  Chin. J. Semicond.  2006, 27(6): 1030
  

  Properties of a Photonic Crystal Microcavity

  Zhao Zhimin, Xu Xingsheng, Li Fang, Liu Yuliang, Chen Hongda

  Chin. J. Semicond.  2006, 27(6): 1034
  

  Calculation of the Efficiency of GaAs Quantum Well Solar Cells

  Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, Mu Hui, Sun Qiang

  Chin. J. Semicond.  2006, 27(6): 1038
  

  GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment

  Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo, Shen Guangdi

  Chin. J. Semicond.  2006, 27(6): 1042
  

  Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon

  Zhao Liwei, Liu Caichi, Teng Xiaoyun, Hao Qiuyan, Zhu Junshan, Sun Shilong, Wang Haiyun, Xu Yuesheng, Feng Yuchun, Guo Baoping

  Chin. J. Semicond.  2006, 27(6): 1046
  

  Fabrication of ZnO Thin-Film Transistors by L-MBE

  Zhang Xin’an, Zhang Jingwen, Yang Xiaodong, Lou Hui, , Liu Zhenling, Zhang Weifeng

  Chin. J. Semicond.  2006, 27(6): 1051
  

  Correlations Between an AlN Insert Layer and Current Collapse in AlGaN/GaN HEMTs

  Li Chengzhan, Liu Jian, Liu Xinyu, Xue Lijun, Chen Xiaojuan, He Zhijing

  Chin. J. Semicond.  2006, 27(6): 1055
  

  Transport Current Model of SiGe HBT

  Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao

  Chin. J. Semicond.  2006, 27(6): 1059
  

  A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant

  Su Shubing, Xu Anhuai, Liu Xinyu, Qi Ming, Liu Xunchun, Wang Runmei

  Chin. J. Semicond.  2006, 27(6): 1064
  

  Numerical Simulation and Analysis of SiGeC/Si Heterojunction Power Diodes

  Gao Yong, Liu Jing, Ma Li, Yu Mingbin

  Chin. J. Semicond.  2006, 27(6): 1068
  

  Optimization of BSIM3 I-V Modeling of High Voltage MOS Devices

  Ren Zheng, Shi Yanling, , Hu Shaojian, Jin Meng, Zhu Jun, Chen Shoumian

  Chin. J. Semicond.  2006, 27(6): 1073
  

  A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control

  Fang Jian, Wu Chao, Qiao Ming, Zhang Bo, Li Zhaoji

  Chin. J. Semicond.  2006, 27(6): 1078
  

  Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon

  Yang Fan, Wang Xiangzhan, Zheng Wei, Ren Jun, You Huancheng, Li Liping, Yang Mohua

  Chin. J. Semicond.  2006, 27(6): 1084
  

  Optimum Design of PSJ for High-Voltage Devices

  Chen Wanjun, Zhang Bo, Li Zhaoji, Deng Xiaochuan

  Chin. J. Semicond.  2006, 27(6): 1089
  

  A K-Band MMIC Medium Power Amplifier for Automotive Radars

  Wang Chuang, Qian Rong, Sun Xiaowei

  Chin. J. Semicond.  2006, 27(6): 1094
  

  Large Two-Dimensional Photonic Band-Gaps Designed by Rapid Genetic Algorithms

  Gong Chunjuan, Hu Xiongwei

  Chin. J. Semicond.  2006, 27(6): 1098
  

  Characteristic of a Vertically-Coupled Triple Microring Resonant Wavelength Multi/Demultiplexer

  Yan Xin, Ma Chunsheng, Wang Xianyin, Xu Yuanzhe, E Shulin, Zhang Daming

  Chin. J. Semicond.  2006, 27(6): 1103
  

  Diffraction Coupling of a Very Long Wavelength Quantum Well Infrared Photodetector Linear Array

  Guo Fangmin, Li Ning, Yu Shaoxin, Xiong Dayuan, Lin Jianfeng, Hou Ying, He Yuhuan, Zhu Ziqiang, Lu Wei, Huang Qi, Zhou Junming

  Chin. J. Semicond.  2006, 27(6): 1109
  

  Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices

  Shi Kai, Xu Mingzhen, Tan Changhua

  Chin. J. Semicond.  2006, 27(6): 1115
  

  Simulation and Optimization of FD SOI CMOS Devices at High Temperatures

  Liu Mengxin, Gao Yong, Zhang Xin, Wang Cailin, Yang Yuan

  Chin. J. Semicond.  2006, 27(6): 1120
  

  Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips

  Wang Huizhi, Li Fuxiao

  Chin. J. Semicond.  2006, 27(6): 1125
  

  A Highly Sensitive Local Curvature Metrology for Internal Stress Detection in Thin Films

  Wang Shasha, Chen Jing, Li Dachao, , Huang Yubo

  Chin. J. Semicond.  2006, 27(6): 1129
  

  Electromigration of SnAgCu Solder Interconnects

  Wu Yiping, , Zhang Jinsong, Wu Fengshun

  Chin. J. Semicond.  2006, 27(6): 1136
  

  Raman Online Measurement of Stress Resulting from Micromachining

  Sang Shengbo, Xue Chenyang, Zhang Wendong, Xiong Jijun, Ruan Yong, Zhang Dacheng, Hao Yilong

  Chin. J. Semicond.  2006, 27(6): 1141
  

  Fabrication of Micro Zone Plates by E-Beam and X-Ray Lithography

  Wang Deqiang, Cao Leifeng, Xie Changqing, Ye Tianchun

  Chin. J. Semicond.  2006, 27(6): 1147
  

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