Chin. J. Semicond. 2007, 28(1): 1
Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide
Chin. J. Semicond. 2007, 28(1): 5
Fabrication of SiC MESFETs for Microwave Power Applications
Chin. J. Semicond. 2007, 28(1): 10
Off-State Breakdown Characteristics of PDSOI nMOSFETs
Chin. J. Semicond. 2007, 28(1): 14
Structural and Optical Performance of GaN Thick Film Grown by HVPE
Chin. J. Semicond. 2007, 28(1): 19
10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver
Chin. J. Semicond. 2007, 28(1): 24
Waveguide Optimization for a 9.0μm GaAs-Based Quantum Cascade Laser
Chin. J. Semicond. 2007, 28(1): 31
IC Implementation of a Programmable CMOS Voltage Reference
Chin. J. Semicond. 2007, 28(1): 36
Strain Distribution and Piezoelectric Effect in GaN/AlN Quantum Dots
Chin. J. Semicond. 2007, 28(1): 42
Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing
Chin. J. Semicond. 2007, 28(1): 47
Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer
Chin. J. Semicond. 2007, 28(1): 52
Chin. J. Semicond. 2007, 28(1): 56
Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT
Chin. J. Semicond. 2007, 28(1): 60
Magnetic Viscosity of Si Melt Under a Magnetic Field
Chin. J. Semicond. 2007, 28(1): 65
Chin. J. Semicond. 2007, 28(1): 69
Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT
Chin. J. Semicond. 2007, 28(1): 73
Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT
Chin. J. Semicond. 2007, 28(1): 78
An Inverter Unified Model of RTT
Chin. J. Semicond. 2007, 28(1): 84
Plasma-Induced Damage on 90nm-Technology MOSFETs
Chin. J. Semicond. 2007, 28(1): 92
High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells
Chin. J. Semicond. 2007, 28(1): 96
High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector
Chin. J. Semicond. 2007, 28(1): 100
Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED
Chin. J. Semicond. 2007, 28(1): 104
High-Power Ridge-Waveguide Tapered Diode Lasers at 14xxnm
Chin. J. Semicond. 2007, 28(1): 108
Design and Mechanical Characteristics of Novel MEMS Microneedles
Chin. J. Semicond. 2007, 28(1): 113
Design and Analysis of a Long Wavelength MOEMS Tunable Filter
Chin. J. Semicond. 2007, 28(1): 117
Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP
Chin. J. Semicond. 2007, 28(1): 122
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
Chin. J. Semicond. 2007, 28(1): 127
RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications
Chin. J. Semicond. 2007, 28(1): 131
Circuit Simulation of SEU for SRAM Cells
Chin. J. Semicond. 2007, 28(1): 138