Chin. J. Semicond. 2007, 28(4): 473
A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications
Chin. J. Semicond. 2007, 28(4): 480
Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor
Chin. J. Semicond. 2007, 28(4): 484
Bandgap Reference Design by Means of Multiple Point Curvature Compensation
Chin. J. Semicond. 2007, 28(4): 490
Chin. J. Semicond. 2007, 28(4): 496
Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures
Chin. J. Semicond. 2007, 28(4): 500
Effect of Inertial Shock on RF MEMS Capacitive Switches Property in Low Vacuum
Chin. J. Semicond. 2007, 28(4): 507
AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
Chin. J. Semicond. 2007, 28(4): 514
Single-Stage Wide-Range CMOS VGA with Temperature Compensation and Linear-in-dB Gain Control
Chin. J. Semicond. 2007, 28(4): 518
A CMOS LC VCO with 3.2~6.1GHz Tuning Range
Chin. J. Semicond. 2007, 28(4): 526
Chin. J. Semicond. 2007, 28(4): 530
2.5Gb/s 0.18μm CMOS Clock and Data Recovery Circuit
Chin. J. Semicond. 2007, 28(4): 537
Key Techniques of Frequency Synthesizer for WLAN Receivers
Chin. J. Semicond. 2007, 28(4): 542
Magnetic-Field-Induced Enhancement of Electronic Conduction in Weakly Coupled Supperlattices
Chin. J. Semicond. 2007, 28(4): 549
Synthesis and Electrical Transmission Characteristics of Type-I Ba8Ga16ZnxSi30-x Clathrates
Chin. J. Semicond. 2007, 28(4): 553
Investigation of Back Contacts for CdS/CdTe Solar Cells
Chin. J. Semicond. 2007, 28(4): 558
Chin. J. Semicond. 2007, 28(4): 563
A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs
Chin. J. Semicond. 2007, 28(4): 567
Research on InP-Based AlAs/In0.53Ga0.47As RTD
Chin. J. Semicond. 2007, 28(4): 573
RTS Noise in Ultra-Thin Oxide nMOSFET under High Gate Bias
Chin. J. Semicond. 2007, 28(4): 576
Analysis of Envelope Elimination and Restoration RF Power Amplifier
Chin. J. Semicond. 2007, 28(4): 582
5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End
Chin. J. Semicond. 2007, 28(4): 587
Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector
Chin. J. Semicond. 2007, 28(4): 592
Noise as a Representation for CTR of Optoelectronic Coupled Devices
Chin. J. Semicond. 2007, 28(4): 597
Research and Design of SPDT RF MEMS Switch
Chin. J. Semicond. 2007, 28(4): 604
Study of Micro-Structure Ethanol Gas Sensor Based on La0.7Sr0.3FeO3
Chin. J. Semicond. 2007, 28(4): 610
Design of a High-Speed Low-Power 9-Port Register File
Chin. J. Semicond. 2007, 28(4): 614
Electromigration of Typical Sn-Based Solder Bump
Chin. J. Semicond. 2007, 28(4): 619
Chin. J. Semicond. 2007, 28(4): 625