Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches
Chin. J. Semicond. 2007, 28(6): 819
A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications
Chin. J. Semicond. 2007, 28(6): 823
Broadband MMIC Power Amplifier for C-X-Ku-Band Applications
Chin. J. Semicond. 2007, 28(6): 829
A Novel Digital Transceiver for CT0 Standard
Chin. J. Semicond. 2007, 28(6): 833
Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile
Chin. J. Semicond. 2007, 28(6): 842
Chin. J. Semicond. 2007, 28(6): 848
Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells
Chin. J. Semicond. 2007, 28(6): 856
Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys
Chin. J. Semicond. 2007, 28(6): 860
Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer
Chin. J. Semicond. 2007, 28(6): 865
Control of Vapor Transport Process of Large Size ZnO Single Crystal Growth
Chin. J. Semicond. 2007, 28(6): 869
Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping
Chin. J. Semicond. 2007, 28(6): 873
Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN
Chin. J. Semicond. 2007, 28(6): 878
Effect of Growth-Preferred Orientation on the Photoelectric Properties of ITO Thin Film
Chin. J. Semicond. 2007, 28(6): 883
Synthesis and Photoluminescence Properties of Dy-Doped ZnO Nanocrystals
Chin. J. Semicond. 2007, 28(6): 887
Research on Optimizing Barrier Material for AlInGaN Quantum Wells
Chin. J. Semicond. 2007, 28(6): 893
Growth of PbI2 Crystal with Excessive Pb and Its Characterization
Chin. J. Semicond. 2007, 28(6): 898
Growth of GaN Thick Film by HVPE on Sapphire Substrate
Chin. J. Semicond. 2007, 28(6): 902
Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy
Chin. J. Semicond. 2007, 28(6): 909
Chin. J. Semicond. 2007, 28(6): 913
A Novel Structure for a Static Induction Transistor
Chin. J. Semicond. 2007, 28(6): 918
Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout
Chin. J. Semicond. 2007, 28(6): 923
Physical Model and Numerical Algorithm Realization for RSD
Chin. J. Semicond. 2007, 28(6): 931
Thermal Safety of Switching Operation of LDMOS Under Different Frequencies
Chin. J. Semicond. 2007, 28(6): 938
Design of InGaAsP Composite Collector for InP DHBT
Chin. J. Semicond. 2007, 28(6): 943
Chin. J. Semicond. 2007, 28(6): 947
Concept and Simulation of a Novel Pre-Equalized CMOS Optoelectronic Integrated Receiver
Chin. J. Semicond. 2007, 28(6): 951
Chin. J. Semicond. 2007, 28(6): 958
X-Band Low Noise Amplifier Module
Chin. J. Semicond. 2007, 28(6): 963
Design and Implementation of a High-Resolution Hybrid DPWM
Chin. J. Semicond. 2007, 28(6): 967
Design of Low Power,High PSRR Voltage Reference
Chin. J. Semicond. 2007, 28(6): 975
Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices
Chin. J. Semicond. 2007, 28(6): 980
High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN
Chin. J. Semicond. 2007, 28(6): 984
Two-Dimensional Discharge Simulation of InductivelyCoupled Plasma Etcher
Chin. J. Semicond. 2007, 28(6): 989
Finite Element Simulation and Process Optimization of Localized Laser Bonding
Chin. J. Semicond. 2007, 28(6): 995