Chin. J. Semicond. 2007, 28(7): 1005
Growth Mode of PTCDA on p-Si Substrates
Chin. J. Semicond. 2007, 28(7): 1009
Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer
Chin. J. Semicond. 2007, 28(7): 1012
Current Share Control IC Design for Paralleled DC/DC Converters
Chin. J. Semicond. 2007, 28(7): 1017
A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis
Chin. J. Semicond. 2007, 28(7): 1023
Chip Design of Li-Ion Battery Charger Operating in Constant-Current/Constant-Voltage Modes
Chin. J. Semicond. 2007, 28(7): 1030
A High Linearity CMOS DVB-S Front-End
Chin. J. Semicond. 2007, 28(7): 1036
Analytic Models for Compensation Ratio of Wurtzite n-GaN at Room Temperature
Chin. J. Semicond. 2007, 28(7): 1041
Effect of Native Oxide on Elasticity of a Silicon Nano-Plate
Chin. J. Semicond. 2007, 28(7): 1048
Characteristics of GaMnN Film Grown by ECR-PEMOCVD
Chin. J. Semicond. 2007, 28(7): 1053
Chin. J. Semicond. 2007, 28(7): 1058
Preparation and Optical Properties of 8-Hydroxylquinline Cadmium Thin Film
Chin. J. Semicond. 2007, 28(7): 1063
Growth and Electrical Properties of Mercury Indium Telluride Crystals
Chin. J. Semicond. 2007, 28(7): 1069
Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells
Chin. J. Semicond. 2007, 28(7): 1072
LPE Growth and Characterization of HgCdTe on Si Based Substrate
Chin. J. Semicond. 2007, 28(7): 1078
Preparation of SiOxNanowires by Hydrothermal Method and Their Photoluminescence
Chin. J. Semicond. 2007, 28(7): 1083
GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates
Chin. J. Semicond. 2007, 28(7): 1088
Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface
Chin. J. Semicond. 2007, 28(7): 1092
Study on ICP Etching Induced Damage in p-GaN
Chin. J. Semicond. 2007, 28(7): 1097
13.7~14.5GHz Internally-Matched GaAs High Power Device
Chin. J. Semicond. 2007, 28(7): 1104
Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor
Chin. J. Semicond. 2007, 28(7): 1107
Chin. J. Semicond. 2007, 28(7): 1112
CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding
Chin. J. Semicond. 2007, 28(7): 1117
Origins of Double Emission Peaks in Electroluminescence Spectrum from InGaN/GaN MQW LED
Chin. J. Semicond. 2007, 28(7): 1121
An Improved Thermal Model for a VCSEL
Chin. J. Semicond. 2007, 28(7): 1125
Fabrication of Hybrid Sol-Gel SiO2 Optical Waveguide Devices by UV-Light Imprinting
Chin. J. Semicond. 2007, 28(7): 1130
Properties of W Sub-Microtube Heater Electrode Used for PhaseChange Memory
Chin. J. Semicond. 2007, 28(7): 1134
Radiation-Hardened 128kb PDSOI CMOS Static RAM
Chin. J. Semicond. 2007, 28(7): 1139
A Novel Inline Type Microwave Power Sensor
Chin. J. Semicond. 2007, 28(7): 1144
High Stability LDO with Large Output Current
Chin. J. Semicond. 2007, 28(7): 1149
Novel Electrostatic Discharge Protection Design Method
Chin. J. Semicond. 2007, 28(7): 1156
A Testing Method on a Thin Film Transistor Array for Active Matrix Organic Emitting Diode
Chin. J. Semicond. 2007, 28(7): 1161