Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs
J. Semicond. 2008, 29(12): 2297
Sampled Grating DBR Lasers with 35nm Quasi-Continuous Tuning Range
J. Semicond. 2008, 29(12): 2301
Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers
J. Semicond. 2008, 29(12): 2304
Polymer Arrayed Waveguide Grating with Box-Like Spectral Response
J. Semicond. 2008, 29(12): 2307
J. Semicond. 2008, 29(12): 2311
Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO
J. Semicond. 2008, 29(12): 2316
Preparation of SnS∶Ag Thin Films by Pulse Electrodeposition
J. Semicond. 2008, 29(12): 2322
Post-Gate Process Annealing Effects of Recessed AlGaN/GaN HEMTs
J. Semicond. 2008, 29(12): 2326
J. Semicond. 2008, 29(12): 2331
259W QCW Al-Free 808nm Linear Laser Diode Arrays
J. Semicond. 2008, 29(12): 2335
Numerical Study of Surface Plasmons Nano-Optical Antenna and Its Array
J. Semicond. 2008, 29(12): 2340
Various Effective Resist Diffusion Lengths Methodology for OPC Model Calibration
J. Semicond. 2008, 29(12): 2346
A Novel High-Speed Equalizer for QAM Signals
J. Semicond. 2008, 29(12): 2353
A 10bit 100MS/s Pipelined ADC with an Improved 1.5bit/Stage Architecture
J. Semicond. 2008, 29(12): 2359
J. Semicond. 2008, 29(12): 2364
Preparation and Acetone Sensing Properties of Flower-Like ZnO Nanorods
J. Semicond. 2008, 29(12): 2372
J. Semicond. 2008, 29(12): 2376
Analysis to Microstructure of CuO/SiO2 Composite Thin Films Annealing at Different Atmospheres
J. Semicond. 2008, 29(12): 2381
Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs
J. Semicond. 2008, 29(12): 2385
Performance and Design of GaN-Based Transferred-Electron Devices
J. Semicond. 2008, 29(12): 2389
Poly-Si Film Functional Layer Based AM-OLED Display Panel
J. Semicond. 2008, 29(12): 2393
Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory
J. Semicond. 2008, 29(12): 2398
Mechanism of Energy-Injection Damage of Silicon Bipolar Low-Noise Amplifiers
J. Semicond. 2008, 29(12): 2403
Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC Substrate
J. Semicond. 2008, 29(12): 2408
Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers
J. Semicond. 2008, 29(12): 2412
Low-Voltage and High Efficiency Tandem White Organic Light Emitting Diodes
J. Semicond. 2008, 29(12): 2417
Experimental Study on Solar Cell Arrays of Trough Concentrating Solar System
J. Semicond. 2008, 29(12): 2421
A Decoupled Silicon Micromachined Gyroscope with Vibration Isolation Frame
J. Semicond. 2008, 29(12): 2427
A Nodal Analysis Method for Electrically Actuated Bow-tie Shaped Fixed-Fixed Beams
J. Semicond. 2008, 29(12): 2432
MMIC-Based RF On-Chip LC Passive Filters
J. Semicond. 2008, 29(12): 2437
Design of pn Mixed Pull-Down Network Domino XOR Gate in 45nm Technology
J. Semicond. 2008, 29(12): 2443