J. Semicond. 2008, 29(2): 193
J. Semicond. 2008, 29(2): 201
A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium
J. Semicond. 2008, 29(2): 206
J. Semicond. 2008, 29(2): 210
J. Semicond. 2008, 29(2): 214
A Novel Capacitive Biaxial Microaccelerometer Based on the Slide-Film Damping Effect
J. Semicond. 2008, 29(2): 219
A Programmable 2.4GHz CMOS Multi-Modulus Frequency Divider
J. Semicond. 2008, 29(2): 224
A Novel SPICE Macro-Model for Power Ics
J. Semicond. 2008, 29(2): 229
J. Semicond. 2008, 29(2): 234
J. Semicond. 2008, 29(2): 240
Multiple Node Upset in SEU Hardened Storage Cells
J. Semicond. 2008, 29(2): 244
Design of a 4.224GHz Quadrature LC-VCO
J. Semicond. 2008, 29(2): 251
An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers
J. Semicond. 2008, 29(2): 256
A 0.5mV High Sensitivity 200Mbps CMOS Limiting Amplifier with RSSI for Optical Receivers
J. Semicond. 2008, 29(2): 262
J. Semicond. 2008, 29(2): 269
A Novel Hybrid DPWM for Digital DC-DC Converters
J. Semicond. 2008, 29(2): 275
A Piecewise Linear Slope Compensation Circuit for DC-DC Converters
J. Semicond. 2008, 29(2): 281
A Novel Technique for Improving Temperature Independence of Ring-ADCs
J. Semicond. 2008, 29(2): 288
A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID
J. Semicond. 2008, 29(2): 293
Low Power Polarity Conversion Based on the Whole Annealing Genetic Algorithm
J. Semicond. 2008, 29(2): 298
Stochastic Analysis of Interconnect Delay in the Presence of Process Variations
J. Semicond. 2008, 29(2): 304
Effect of Quantum Confinement on Acceptor Binding Energy in Multiple Quantum Wells
J. Semicond. 2008, 29(2): 310
Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD
J. Semicond. 2008, 29(2): 315
Preparation and C2H2 Sensing Characteristics of Sm2O3-Doped SnO2 Gas Sensors
J. Semicond. 2008, 29(2): 319
Resonant Tunneling Diode Based Stress Measurement
J. Semicond. 2008, 29(2): 324
Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si3N4 Passivation
J. Semicond. 2008, 29(2): 329
Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs
J. Semicond. 2008, 29(2): 334
Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs
J. Semicond. 2008, 29(2): 338
Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer
J. Semicond. 2008, 29(2): 344
A New Structural IGBT-- an Internal Transparent Collector IGBT and Its Simulation
J. Semicond. 2008, 29(2): 348
An Air-Bridge Inter-Connection Method for Microwave and High Temperature Devices
J. Semicond. 2008, 29(2): 352
Theoretical and Experimental Investigation of SGDBR on Sampled Grating
J. Semicond. 2008, 29(2): 356
A UHF Balanced Broadband 20W Power Amplifier
J. Semicond. 2008, 29(2): 361
A 10b 40MS/s, 72dB SFDR Pipelined ADC for DTMB Receivers
J. Semicond. 2008, 29(2): 366
A Programmable Assert Threshold Loss-of-Signal Detector for Intelligent Optical Modules
J. Semicond. 2008, 29(2): 371
An Approach to Resisting High-Order Differential Power Analysis Attacks on DES Chips
J. Semicond. 2008, 29(2): 376
EOS Failure Analysis and Die Attach Optimization
J. Semicond. 2008, 29(2): 381
A CMOS Implementation for Radial Basis Function Networks
J. Semicond. 2008, 29(2): 387