Archive

Volume 29, Issue 4, Apr 2008

• LETTERS

  The Bipolar Theory of the Field-Effect Transistor:X.The Fundamental Physics and Theory(All Device Structures)

  Sah Chih-Tang, Jie Binbin

  J. Semicond.  2008, 29(4): 613
  

  The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)

  Jie Binbin, Sah Chih-Tang

  J. Semicond.  2008, 29(4): 620
  

  Emerging Challenges in ESD Protection for RF ICs in CMOS

  Wang Albert, Lin Lin, Wang Xin, Liu Hainan, Zhou Yumei

  J. Semicond.  2008, 29(4): 628
  

  Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

  Guo Hui, Feng Qian, Tang Xiaoyan, Zhang Yimen, Zhang Yuming

  J. Semicond.  2008, 29(4): 637
  

  Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

  Zeng Yugang, Han Genquan, Yu Jinzhong

  J. Semicond.  2008, 29(4): 641
  

  An SIT-BJT Operation Model for SITh in the Blocking State

  Yang Jianhong, Wang Zaixing, Li Siyuan

  J. Semicond.  2008, 29(4): 645
  

  OTFT with Bilayer Gate Insulator and Modificative Electrode

  Bai Yu, Khizar-ul-Haq, M.A.Khan, Jiang Xueyin, Zhang Zhilin

  J. Semicond.  2008, 29(4): 650
  

  A High Purity Integer-N Frequency Synthesizer in 0.35μm SiGe BiCMOS

  Zhang Jian, Li Zhiqiang, Chen Liqiang, Chen Pufeng, Zhang Haiying

  J. Semicond.  2008, 29(4): 655
  

  A Novel All-pMOS AC to DC Charge Pump with High Efficiency

  Jiang Bowei, Wang Xiao, Min Hao

  J. Semicond.  2008, 29(4): 660
  

• PAPERS

  The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures

  Miao Qinghai, Lu Shuojin, Zhang Xinghua, Zong Fujian, Zhu Yangjun

  J. Semicond.  2008, 29(4): 663
  

  1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs

  Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, Liu Liang, Li Xiao, Zhang Jian, Ye Tianchun

  J. Semicond.  2008, 29(4): 668
  

  A Novel Equivalent Circuit Model of GaAs PIN Diodes

  Wu Rufei, Zhang Haiying, Yin Junjian, Li Xiao, Liu Huidong, Liu Xunchun

  J. Semicond.  2008, 29(4): 672
  

  An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure

  Duan Baoxing, Yang Yintang, Zhang Bo, Li Zhaoji

  J. Semicond.  2008, 29(4): 677
  

  A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating

  Chen Dingbo, Zhu Hongliang, Liang Song, Wang Baojun, Wang Lufeng, Kong Duanhua, Zhang Wei, Wang Huan, Sun Yu, Zhang Yunxiao, Wang Liesong

  J. Semicond.  2008, 29(4): 682
  

  A High Precision CMOS Opamp Suitable for ISFET Readout

  Zhang Chong, Yang Haigang, Wei Jinbao

  J. Semicond.  2008, 29(4): 686
  

  A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

  Zhang Wancheng, Wu Nanjian

  J. Semicond.  2008, 29(4): 693
  

  Design of a High Precision Array Pulse Sensor in TCM

  Huai Yongjin, Han Zhengsheng

  J. Semicond.  2008, 29(4): 701
  

  Top-Down Design of 260k Color TFT-LCD One-Chip Driver ICs

  Wei Tingcun, Gao Wu

  J. Semicond.  2008, 29(4): 706
  

  Design and Implementation of an FDP Chip

  Chen Liguang, Wang Yabin, Wu Fang, Lai Jinmei, Tong Jiarong, Zhang Huowen, Tu Rui, Wang Jian, Wang Yuan, Shen Qiushi, Yu Hui, Huang Junnai, Lu Haizhou, Pan Guanghua

  J. Semicond.  2008, 29(4): 713
  

  A Passive NCITS 256 UHF RFID Transponder

  Liu Zhongqi, Sun Xuguang, Bai Rongrong, Zhang Chun, Li Yongming, Wang Zhihua

  J. Semicond.  2008, 29(4): 719
  

  Delay and Energy Efficient Design of an On-Chip Bus with Repeaters Using a New Spatial and Temporal Encoding Technique

  Zhang Qingli, Wang Jinxiang, Yu Mingyan, Ye Yizheng

  J. Semicond.  2008, 29(4): 724
  

  Structural and Optical Properties of Amorphous MCT Films Deposited by RF Magnetron Sputtering

  Kong Jincheng, Kong Lingde, Zhao Jun, Zhang Pengju, Li Hongzhi, Li Xiongjun, Wang Shanli, Ji Rongbin

  J. Semicond.  2008, 29(4): 733
  

  Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz

  Zhao Yuhang, Hu Shaojian, Ren Zheng

  J. Semicond.  2008, 29(4): 737
  

  An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs

  Zhou Shouli, Ren Xiaomin

  J. Semicond.  2008, 29(4): 741
  

  A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos

  Luan Suzhen, Liu Hongxia, Jia Renxu, Wang Jin

  J. Semicond.  2008, 29(4): 746
  

  Study of a New Pattern of Omni-Directional Reflector AlGaInP Thin-Film Light-Emitting Diodes

  Gao Wei, Zou Deshu, Li Jianjun, Guo Weiling, Shen Guangdi

  J. Semicond.  2008, 29(4): 751
  

  Luminescence Characteristics of a Blue-Green Emission Thin Film Electroluminescence Device Based on a ZnSe Emitting Layer

  Jiang Weiwei, Zhao Suling, Zhang Fujun, Xu Zheng

  J. Semicond.  2008, 29(4): 754
  

  Substrate Current and Hot-Carrier-Injection in High Voltage Asymmetrical n-Channel MOS Transistor Technology

  Dai Mingzhi, Liu Shaohua, Arthur Cheng, Li Hong, Andrew Yap, Wang Jun, Jiang Liu, Liao Kuanyang

  J. Semicond.  2008, 29(4): 757
  

  Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

  Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng, Wu Huizhen

  J. Semicond.  2008, 29(4): 765
  

  Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals

  Lü Jin, Chen Yubin, Zuo Zheng, Shi Yi, Pu Lin, Zheng Youdou

  J. Semicond.  2008, 29(4): 770
  

  Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor

  Zhu Dapeng, Luo Le

  J. Semicond.  2008, 29(4): 774
  

  Analysis of Processing Chamber Flow Field Characteristics for an ICP Etcher Based on Regression Orthogonal Design

  Cheng Jia, Zhu Yu, Duan Guanghong, Wang Chunhong

  J. Semicond.  2008, 29(4): 780
  

  An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors

  Deng Heqing, Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong

  J. Semicond.  2008, 29(4): 785
  

  Optimization of a Thermoelectric Microwave Power Sensor

  Han Lei, Huang Qing’an, Liao Xiaoping

  J. Semicond.  2008, 29(4): 789
  

  A "Time Reuse" Technique for Design of a Low-Power,High-Speed Multi-Modulus Divider in a Frequency Synthesizer

  Yuan Quan, Yang Haigang, Dong Fangyuan, Zhong Lungui

  J. Semicond.  2008, 29(4): 794
  

  A CMOS Down-Converting Mixer For OFDM UWB Receivers

  Hu Jiasheng, Li Wei, Li Ning

  J. Semicond.  2008, 29(4): 800
  

  Research and Implementation Process of a 42" PDP Scan Driver IC

  Hong Hui, Han Yan, Han Chenggong, Wang Yalin

  J. Semicond.  2008, 29(4): 806
  

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