J. Semicond. 2008, 29(4): 613
J. Semicond. 2008, 29(4): 620
Emerging Challenges in ESD Protection for RF ICs in CMOS
J. Semicond. 2008, 29(4): 628
J. Semicond. 2008, 29(4): 637
Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
J. Semicond. 2008, 29(4): 641
An SIT-BJT Operation Model for SITh in the Blocking State
J. Semicond. 2008, 29(4): 645
OTFT with Bilayer Gate Insulator and Modificative Electrode
J. Semicond. 2008, 29(4): 650
A High Purity Integer-N Frequency Synthesizer in 0.35μm SiGe BiCMOS
J. Semicond. 2008, 29(4): 655
A Novel All-pMOS AC to DC Charge Pump with High Efficiency
J. Semicond. 2008, 29(4): 660
J. Semicond. 2008, 29(4): 663
1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs
J. Semicond. 2008, 29(4): 668
A Novel Equivalent Circuit Model of GaAs PIN Diodes
J. Semicond. 2008, 29(4): 672
An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure
J. Semicond. 2008, 29(4): 677
A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating
J. Semicond. 2008, 29(4): 682
A High Precision CMOS Opamp Suitable for ISFET Readout
J. Semicond. 2008, 29(4): 686
A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors
J. Semicond. 2008, 29(4): 693
Design of a High Precision Array Pulse Sensor in TCM
J. Semicond. 2008, 29(4): 701
Top-Down Design of 260k Color TFT-LCD One-Chip Driver ICs
J. Semicond. 2008, 29(4): 706
Design and Implementation of an FDP Chip
J. Semicond. 2008, 29(4): 713
A Passive NCITS 256 UHF RFID Transponder
J. Semicond. 2008, 29(4): 719
J. Semicond. 2008, 29(4): 724
Structural and Optical Properties of Amorphous MCT Films Deposited by RF Magnetron Sputtering
J. Semicond. 2008, 29(4): 733
Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz
J. Semicond. 2008, 29(4): 737
J. Semicond. 2008, 29(4): 741
J. Semicond. 2008, 29(4): 746
Study of a New Pattern of Omni-Directional Reflector AlGaInP Thin-Film Light-Emitting Diodes
J. Semicond. 2008, 29(4): 751
J. Semicond. 2008, 29(4): 754
J. Semicond. 2008, 29(4): 757
J. Semicond. 2008, 29(4): 765
J. Semicond. 2008, 29(4): 770
Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor
J. Semicond. 2008, 29(4): 774
J. Semicond. 2008, 29(4): 780
An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors
J. Semicond. 2008, 29(4): 785
Optimization of a Thermoelectric Microwave Power Sensor
J. Semicond. 2008, 29(4): 789
J. Semicond. 2008, 29(4): 794
A CMOS Down-Converting Mixer For OFDM UWB Receivers
J. Semicond. 2008, 29(4): 800
Research and Implementation Process of a 42" PDP Scan Driver IC
J. Semicond. 2008, 29(4): 806