Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film
J. Semicond. 2009, 30(12): 122001
doi: 10.1088/1674-4926/30/12/122001
GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
J. Semicond. 2009, 30(12): 123001
doi: 10.1088/1674-4926/30/12/123001
ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light
J. Semicond. 2009, 30(12): 123002
doi: 10.1088/1674-4926/30/12/123002
Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD
J. Semicond. 2009, 30(12): 123003
doi: 10.1088/1674-4926/30/12/123003
Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs
J. Semicond. 2009, 30(12): 124001
doi: 10.1088/1674-4926/30/12/124001
Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
J. Semicond. 2009, 30(12): 124002
doi: 10.1088/1674-4926/30/12/124002
Improvements to the extraction of an AlGaN/GaN HEMT small-signal model
J. Semicond. 2009, 30(12): 124003
doi: 10.1088/1674-4926/30/12/124003
J. Semicond. 2009, 30(12): 124004
doi: 10.1088/1674-4926/30/12/124004
An improved HCI degradation model for a VLSI MOSFET
J. Semicond. 2009, 30(12): 124005
doi: 10.1088/1674-4926/30/12/124005
A symbolically defined InP double heterojunction bipolar transistor large-signal model
J. Semicond. 2009, 30(12): 124006
doi: 10.1088/1674-4926/30/12/124006
Simulation for signal charge transfer of charge coupled devices
J. Semicond. 2009, 30(12): 124007
doi: 10.1088/1674-4926/30/12/124007
Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers
J. Semicond. 2009, 30(12): 124008
doi: 10.1088/1674-4926/30/12/124008
A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
J. Semicond. 2009, 30(12): 125001
doi: 10.1088/1674-4926/30/12/125001
A constant-gm and high-slew-rate operational amplifier for an LCD driver
J. Semicond. 2009, 30(12): 125002
doi: 10.1088/1674-4926/30/12/125002
A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB
J. Semicond. 2009, 30(12): 125003
doi: 10.1088/1674-4926/30/12/125003
A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process
J. Semicond. 2009, 30(12): 125004
doi: 10.1088/1674-4926/30/12/125004
A four-channel microelectronic system for neural signal regeneration
J. Semicond. 2009, 30(12): 125005
doi: 10.1088/1674-4926/30/12/125005
A multi-mode low ripple charge pump with active regulation
J. Semicond. 2009, 30(12): 125006
doi: 10.1088/1674-4926/30/12/125006
A bootstrapped switch employing a new clock feed-through compensation technique
J. Semicond. 2009, 30(12): 125007
doi: 10.1088/1674-4926/30/12/125007
J. Semicond. 2009, 30(12): 125008
doi: 10.1088/1674-4926/30/12/125008
J. Semicond. 2009, 30(12): 125009
doi: 10.1088/1674-4926/30/12/125009
Monte Carlo analysis of a low power domino gate under parameter fluctuation
J. Semicond. 2009, 30(12): 125010
doi: 10.1088/1674-4926/30/12/125010
A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma–delta modulator
J. Semicond. 2009, 30(12): 125011
doi: 10.1088/1674-4926/30/12/125011
Tunable current mirror and its application in LNA
J. Semicond. 2009, 30(12): 125012
doi: 10.1088/1674-4926/30/12/125012
Low-power CMOS fully-folding ADC with a mixed-averaging distributed T/H circuit
J. Semicond. 2009, 30(12): 125013
doi: 10.1088/1674-4926/30/12/125013
TaN wet etch for application in dual-metal-gate integration technology
J. Semicond. 2009, 30(12): 126001
doi: 10.1088/1674-4926/30/12/126001