Archive

Volume 30, Issue 12, Dec 2009

• SEMICONDUCTOR PHYSICS

  Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

  Chi Yaqing, Zhong Haiqin, Zhang Xueao, Fang Liang, Chang Shengli

  J. Semicond.  2009, 30(12): 122001
  doi: 10.1088/1674-4926/30/12/122001

• SEMICONDUCTOR MATERIALS

  GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

  Zhang Xiaoying, Ruan Yujiao, Chen Songyan, Li Cheng

  J. Semicond.  2009, 30(12): 123001
  doi: 10.1088/1674-4926/30/12/123001

  ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light

  Cheng Ping, Zhang Yuming, Zhang Yimen, Guo Hui

  J. Semicond.  2009, 30(12): 123002
  doi: 10.1088/1674-4926/30/12/123002

  Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD

  Xu Zhihao, Zhang Jincheng, Duan Huantao, Zhang Zhongfen, Zhu Qingwei, Xu Hao, Hao Yue

  J. Semicond.  2009, 30(12): 123003
  doi: 10.1088/1674-4926/30/12/123003

• SEMICONDUCTOR DEVICES

  Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs

  Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke, Liu Guoguo

  J. Semicond.  2009, 30(12): 124001
  doi: 10.1088/1674-4926/30/12/124001

  Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

  Quan Si, Hao Yue, Ma Xiaohua, Xie Yuanbin, Ma Jigang

  J. Semicond.  2009, 30(12): 124002
  doi: 10.1088/1674-4926/30/12/124002

  Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

  Pu Yan, Pang Lei, Wang Liang, Chen Xiaojuan, Li Chengzhan, Liu Xinyu

  J. Semicond.  2009, 30(12): 124003
  doi: 10.1088/1674-4926/30/12/124003

  Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F--N stress tests

  He Jin, Ma Chenyue, Wang Hao, Chen Xu, Zhang Chenfei, Lin Xinnan, Zhang Xing

  J. Semicond.  2009, 30(12): 124004
  doi: 10.1088/1674-4926/30/12/124004

  An improved HCI degradation model for a VLSI MOSFET

  Tang Yi, Wan Xinggong, Gu Xiang, Wan Wenyuan, Zhang Huirui, Liu Yuwei

  J. Semicond.  2009, 30(12): 124005
  doi: 10.1088/1674-4926/30/12/124005

  A symbolically defined InP double heterojunction bipolar transistor large-signal model

  Cao Yuxiong, Jin Zhi, Ge Ji, Su Yongbo, Liu Xinyu

  J. Semicond.  2009, 30(12): 124006
  doi: 10.1088/1674-4926/30/12/124006

  Simulation for signal charge transfer of charge coupled devices

  Wang Zujun, Liu Yinong, Chen Wei, Tang Benqi, Xiao Zhigang, Huang Shaoyan, Liu Minbo, Zhang Yong

  J. Semicond.  2009, 30(12): 124007
  doi: 10.1088/1674-4926/30/12/124007

  Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

  Zhao Lixin, Jin Zhi, Liu Xinyu

  J. Semicond.  2009, 30(12): 124008
  doi: 10.1088/1674-4926/30/12/124008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

  Liu Jizhi, Chen Xingbi

  J. Semicond.  2009, 30(12): 125001
  doi: 10.1088/1674-4926/30/12/125001

  A constant-gm and high-slew-rate operational amplifier for an LCD driver

  Lai Xinquan, Li Xinlin, Ye Qiang, Yuan Bing, Li Xianrui

  J. Semicond.  2009, 30(12): 125002
  doi: 10.1088/1674-4926/30/12/125002

  A 3.1--4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

  Zheng Renliang, Ren Junyan, Li Wei, Li Ning

  J. Semicond.  2009, 30(12): 125003
  doi: 10.1088/1674-4926/30/12/125003

  A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

  Xiao Xindong, Mao Luhong, Yu Changliang, Zhang Shilin, Xie Sheng

  J. Semicond.  2009, 30(12): 125004
  doi: 10.1088/1674-4926/30/12/125004

  A four-channel microelectronic system for neural signal regeneration

  Xie Shushan, Wang Zhigong, Lü Xiaoying, Li Wenyuan, Pan Haixian

  J. Semicond.  2009, 30(12): 125005
  doi: 10.1088/1674-4926/30/12/125005

  A multi-mode low ripple charge pump with active regulation

  Ye Qiang, Lai Xinquan, Xu Luping, Wang Hui, Zeng Huali, Chen Fuji

  J. Semicond.  2009, 30(12): 125006
  doi: 10.1088/1674-4926/30/12/125006

  A bootstrapped switch employing a new clock feed-through compensation technique

  Wu Xiaofeng, Liu Hongxia, Su Li, Hao Yue, Li Di, Hu Shigang

  J. Semicond.  2009, 30(12): 125007
  doi: 10.1088/1674-4926/30/12/125007

  A variable step-down conversion ratio switched capacitor DC--DC converter for energy harvesting systems working in intermittent mode

  Hao Wenhan, Jia Chen, Chen Hong, Zhang Chun, Wang Zhihua

  J. Semicond.  2009, 30(12): 125008
  doi: 10.1088/1674-4926/30/12/125008

  A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

  Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua, Li Junfeng

  J. Semicond.  2009, 30(12): 125009
  doi: 10.1088/1674-4926/30/12/125009

  Monte Carlo analysis of a low power domino gate under parameter fluctuation

  Wang Jinhui, Wu Wuchen, Gong Na, Hou Ligang, Peng Xiaohong, Gao Daming

  J. Semicond.  2009, 30(12): 125010
  doi: 10.1088/1674-4926/30/12/125010

  A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma–delta modulator

  Li Yuanwen, Qi Da, Dong Yifeng, Xu Jun, Ren Junyan

  J. Semicond.  2009, 30(12): 125011
  doi: 10.1088/1674-4926/30/12/125011

  Tunable current mirror and its application in LNA

  Li Kun, Teng Jianfu, Yu Changliang, Huang Jianyao

  J. Semicond.  2009, 30(12): 125012
  doi: 10.1088/1674-4926/30/12/125012

  Low-power CMOS fully-folding ADC with a mixed-averaging distributed T/H circuit

  Liu Zhen, Jia Song, Wang Yuan, Ji Lijiu, Zhang Xing

  J. Semicond.  2009, 30(12): 125013
  doi: 10.1088/1674-4926/30/12/125013

• SEMICONDUCTOR TECHNOLOGY

  TaN wet etch for application in dual-metal-gate integration technology

  Li Yongliang, Xu Qiuxia

  J. Semicond.  2009, 30(12): 126001
  doi: 10.1088/1674-4926/30/12/126001

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