Archive

Volume 30, Issue 2, Feb 2009

• INVITED PAPERS

  The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

  Sah Chih-Tang, Jie Bin-bin

  J. Semicond.  2009, 30(2): 021001
  doi: 10.1088/1674-4926/30/2/021001

• SEMICONDUCTOR PHYSICS

  Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

  Gao Yanjun, Duanmu Qingduo, Wang Guozheng, Li Ye, Tian Jingquan

  J. Semicond.  2009, 30(2): 022001
  doi: 10.1088/1674-4926/30/2/022001

• SEMICONDUCTOR MATERIALS

  Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

  Liu Hanfa, Zhang Huafu, Lei Chengxin, Yuan Changkun

  J. Semicond.  2009, 30(2): 023001
  doi: 10.1088/1674-4926/30/2/023001

  Thermal stability of HfTaON films prepared by physical vapor deposition

  Xu Gaobo, Xu Qiuxia

  J. Semicond.  2009, 30(2): 023002
  doi: 10.1088/1674-4926/30/2/023002

  Chemical mechanical polishing of freestanding GaN substrates

  Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi, Zheng Youdou

  J. Semicond.  2009, 30(2): 023003
  doi: 10.1088/1674-4926/30/2/023003

• SEMICONDUCTOR DEVICES

  A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

  He Jin, Zhang Jian, Zhang Lining, Ma Chenyue, Chan Mansun

  J. Semicond.  2009, 30(2): 024001
  doi: 10.1088/1674-4926/30/2/024001

  A novel SOI-DTMOS structure from circuit performance considerations

  Song Wenbin, Bi Jinshun, Han Zhengsheng

  J. Semicond.  2009, 30(2): 024002
  doi: 10.1088/1674-4926/30/2/024002

  Design and performance of a complex-coupled DFB laser with sampled grating

  Wang Huan, Zhu Hongliang, Jia Linghui, Chen Xiangfei, Wang Wei

  J. Semicond.  2009, 30(2): 024003
  doi: 10.1088/1674-4926/30/2/024003

  Accurate and fast table look-up models for leakage current analysis in 65 nm CMOS technology

  Xue Jiying, Li Tao, Yu Zhiping

  J. Semicond.  2009, 30(2): 024004
  doi: 10.1088/1674-4926/30/2/024004

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A high efficiency PWM CMOS class-D audio power amplifier

  Zhu Zhangming, Liu Lianxi, Yang Yintang, Lei Han

  J. Semicond.  2009, 30(2): 025001
  doi: 10.1088/1674-4926/30/2/025001

  A 4–9 GHz 10 W wideband power amplifier

  Chen Zhongzi, Chen Xiaojuan, Yao Xiaojiang, Yuan Tingting, Liu Xinyu, Li Bin

  J. Semicond.  2009, 30(2): 025002
  doi: 10.1088/1674-4926/30/2/025002

  A linear stepping PGA used in CMOS image sensors

  Xu Jiangtao, Li Binqiao, Zhao Shibin, Li Hongle, Yao Suying

  J. Semicond.  2009, 30(2): 025003
  doi: 10.1088/1674-4926/30/2/025003

  Design of a 4.6 GHz high-performance quadrature CMOS VCO using transformer couple

  Wu Xiushan, Wang Zhigong, Li Zhiqun, Li Qing

  J. Semicond.  2009, 30(2): 025004
  doi: 10.1088/1674-4926/30/2/025004

  A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT

  Wang Xiantai, Shen Huajun, Jin Zhi, Chen Yanhu, Liu Xinyu

  J. Semicond.  2009, 30(2): 025005
  doi: 10.1088/1674-4926/30/2/025005

  A 13-bit, 8 MSample/s pipeline A/D converter

  Guo Dandan, Li Fule, Zhang Chun, Wang Zhihua

  J. Semicond.  2009, 30(2): 025006
  doi: 10.1088/1674-4926/30/2/025006

  A current-mode buck DC–DC controller with adaptive on-time control

  Li Yanming, Lai Xinquan, Ye Qiang, Yuan Bing, Jia Xinzhang, Chen Fuji

  J. Semicond.  2009, 30(2): 025007
  doi: 10.1088/1674-4926/30/2/025007

  80 Gb/s 2 : 1 multiplexer in 0.13-µm SiGe BiCMOS technology

  Zhao Yan, Wang Zhigong, Li Wei

  J. Semicond.  2009, 30(2): 025008
  doi: 10.1088/1674-4926/30/2/025008

  A widely tunable continuous-time LPF for a direct conversion DBS tuner

  Chen Bei, Chen Fangxiong, Ma Heping, Shi Yin, Dai F F

  J. Semicond.  2009, 30(2): 025009
  doi: 10.1088/1674-4926/30/2/025009

  Design and implementation of a high dimming ratio LED drive controller

  Xu Xiaoru, Wu Xiaobo, Zhao Menglian, Yan Xiaolang

  J. Semicond.  2009, 30(2): 025010
  doi: 10.1088/1674-4926/30/2/025010

  Ternary logic circuit design based on single electron transistors

  Wu Gang, Cai Li, Li Qin

  J. Semicond.  2009, 30(2): 025011
  doi: 10.1088/1674-4926/30/2/025011

• SEMICONDUCTOR TECHNOLOGY

  NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

  Lin Mengzhe, CaoQing, YanTingjing, ZhangShuming, ChenLianghui

  J. Semicond.  2009, 30(2): 026001
  doi: 10.1088/1674-4926/30/2/026001

• SCIENCE FUND INFORMATION

  Adapting to change, meeting challengesöanalysis of the applied projects in 2008 semiconductor discipline of National Natural Science Foundation of China

  He Jie

  J. Semicond.  2009, 30(2): 027001
  doi: 10.1088/1674-4926/30/2/027001

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