The Complete Semiconductor Transistor and Its Incomplete Forms
J. Semicond. 2009, 30(6): 061001
doi: 10.1088/1674-4926/30/6/061001
Effect of a step quantum well structure and an electric-field on the Rashba spin splitting
J. Semicond. 2009, 30(6): 062001
doi: 10.1088/1674-4926/30/6/062001
J. Semicond. 2009, 30(6): 062002
doi: 10.1088/1674-4926/30/6/062002
Atomistic simulations of the tensile and melting behavior of silicon nanowires
J. Semicond. 2009, 30(6): 062003
doi: 10.1088/1674-4926/30/6/062003
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
J. Semicond. 2009, 30(6): 063001
doi: 10.1088/1674-4926/30/6/063001
Temperature: a critical parameter affecting the optical properties of porous silicon
J. Semicond. 2009, 30(6): 063002
doi: 10.1088/1674-4926/30/6/063002
Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip
J. Semicond. 2009, 30(6): 063003
doi: 10.1088/1674-4926/30/6/063003
Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes
J. Semicond. 2009, 30(6): 063004
doi: 10.1088/1674-4926/30/6/063004
Tricolor microcavity OLEDs based on P-nc-Si:H films as the complex anodes
J. Semicond. 2009, 30(6): 063005
doi: 10.1088/1674-4926/30/6/063005
InP-base resonant tunneling diodes
J. Semicond. 2009, 30(6): 064001
doi: 10.1088/1674-4926/30/6/064001
Characteristics of vertical double-gate dual-strained-channel MOSFETs
J. Semicond. 2009, 30(6): 064002
doi: 10.1088/1674-4926/30/6/064002
Large-signal modeling method for power FETs and diodes
J. Semicond. 2009, 30(6): 064003
doi: 10.1088/1674-4926/30/6/064003
Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
J. Semicond. 2009, 30(6): 064004
doi: 10.1088/1674-4926/30/6/064004
An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
J. Semicond. 2009, 30(6): 064005
doi: 10.1088/1674-4926/30/6/064005
J. Semicond. 2009, 30(6): 064006
doi: 10.1088/1674-4926/30/6/064006
A novel method using SiNW to measure stress in cantilevers
J. Semicond. 2009, 30(6): 064007
doi: 10.1088/1674-4926/30/6/064007
Influence of electron irradiation on the switching speed in insulated gate bipolar transistors
J. Semicond. 2009, 30(6): 064008
doi: 10.1088/1674-4926/30/6/064008
Experimental study on the single event latchup simulated by a pulse laser
J. Semicond. 2009, 30(6): 064009
doi: 10.1088/1674-4926/30/6/064009
J. Semicond. 2009, 30(6): 065001
doi: 10.1088/1674-4926/30/6/065001
Current mode ADC design in a 0.5-μm CMOS process
J. Semicond. 2009, 30(6): 065002
doi: 10.1088/1674-4926/30/6/065002
A CMOS image-rejection mixer with 58-dB IRR for DTV receivers
J. Semicond. 2009, 30(6): 065003
doi: 10.1088/1674-4926/30/6/065003
Adaptive digital calibration techniques for narrow band low-IF receivers with on-chip PLL
J. Semicond. 2009, 30(6): 065004
doi: 10.1088/1674-4926/30/6/065004
Robustness aware high performance high fan-in domino OR logic design
J. Semicond. 2009, 30(6): 065005
doi: 10.1088/1674-4926/30/6/065005
A 60-dB linear VGA with novel exponential gain approximation
J. Semicond. 2009, 30(6): 065006
doi: 10.1088/1674-4926/30/6/065006
A low power high linearity baseband for a direct conversation CMMB tuner
J. Semicond. 2009, 30(6): 065007
doi: 10.1088/1674-4926/30/6/065007
Design and analysis of a highly-integrated CMOS power amplifier for RFID readers
J. Semicond. 2009, 30(6): 065008
doi: 10.1088/1674-4926/30/6/065008
A cascaded charge-sharing technique for an EDP-efficient match-line design in CAMs
J. Semicond. 2009, 30(6): 065009
doi: 10.1088/1674-4926/30/6/065009
Designand implementation of a delay-optimized universal programmable routing circuit for FPGAs
J. Semicond. 2009, 30(6): 065010
doi: 10.1088/1674-4926/30/6/065010
Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates
J. Semicond. 2009, 30(6): 066001
doi: 10.1088/1674-4926/30/6/066001
Overlay mark optimization for thick-film resist overlay metrology
J. Semicond. 2009, 30(6): 066002
doi: 10.1088/1674-4926/30/6/066002