Archive

Volume 30, Issue 6, Jun 2009

• INVITED PAPERS

  The Complete Semiconductor Transistor and Its Incomplete Forms

  Jie Binbin, Sah Chih-Tang

  J. Semicond.  2009, 30(6): 061001
  doi: 10.1088/1674-4926/30/6/061001

• SEMICONDUCTOR PHYSICS

  Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

  Hao Yafei, Chen Yonghai, Hao Guodong, Wang Zhanguo

  J. Semicond.  2009, 30(6): 062001
  doi: 10.1088/1674-4926/30/6/062001

  Effects of electron– and impurity-ion–LO phonon couples on the impurity states in cylindrical quantum wires

  Zhao Zengru, Liang Xixia

  J. Semicond.  2009, 30(6): 062002
  doi: 10.1088/1674-4926/30/6/062002

  Atomistic simulations of the tensile and melting behavior of silicon nanowires

  Jing Yuhang, Meng Qingyuan, Zhao Wei

  J. Semicond.  2009, 30(6): 062003
  doi: 10.1088/1674-4926/30/6/062003

• SEMICONDUCTOR MATERIALS

  Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

  Shi Mingji, Wang Zhanguo, Liu Shiyong, Peng Wenbo, Xiao Haibo, Zhang Changsha, Zeng Xiangbo

  J. Semicond.  2009, 30(6): 063001
  doi: 10.1088/1674-4926/30/6/063001

  Temperature: a critical parameter affecting the optical properties of porous silicon

  Long Yongfu, Ge Jin, Ding Xunmin, Hou Xiaoyuan

  J. Semicond.  2009, 30(6): 063002
  doi: 10.1088/1674-4926/30/6/063002

  Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip

  Liu Yanbo, Zhang Ting, Niu Xiaoming, Song Zhitang, Min Guoquan, Zhang Jing, Zhou Weimin, Wan Yongzhong, Zhang Jianping, Li Xiaoli, Feng Songlin

  J. Semicond.  2009, 30(6): 063003
  doi: 10.1088/1674-4926/30/6/063003

  Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes

  Li Yingying, Cheng Chuanwei, Dong Xiang, Gao Junshan, Zhang Haiqian

  J. Semicond.  2009, 30(6): 063004
  doi: 10.1088/1674-4926/30/6/063004

  Tricolor microcavity OLEDs based on P-nc-Si:H films as the complex anodes

  Li Yang, Liu Xingyuan, Wu Chunya, Meng Zhiguo, Wang Yi, Xiong Shaozhen

  J. Semicond.  2009, 30(6): 063005
  doi: 10.1088/1674-4926/30/6/063005

• SEMICONDUCTOR DEVICES

  InP-base resonant tunneling diodes

  Han Chunlin, Chen Chen, Zou Penghui, Zhang Yang, Zeng Yiping, Xue Fangshi, Gao Jianfeng, Zhang Zheng, Geng Tao

  J. Semicond.  2009, 30(6): 064001
  doi: 10.1088/1674-4926/30/6/064001

  Characteristics of vertical double-gate dual-strained-channel MOSFETs

  Gao Yong, Yang Jing, Yang Yuan, Liu Jing

  J. Semicond.  2009, 30(6): 064002
  doi: 10.1088/1674-4926/30/6/064002

  Large-signal modeling method for power FETs and diodes

  Sun Lu, Wang Jiali, Wang Shan, Li Xuezheng, Shi Hui, Wang Na, Guo Shengping

  J. Semicond.  2009, 30(6): 064003
  doi: 10.1088/1674-4926/30/6/064003

  Reliability of AlGaInP light emitting diodes with an ITO current spreading layer

  Gao Wei, Guo Weiling, Zhu Yanxu, Jiang Wenjing, Shen Guangdi

  J. Semicond.  2009, 30(6): 064004
  doi: 10.1088/1674-4926/30/6/064004

  An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

  Chong Feng, Wang Jun, Xiong Cong, Wang Cuiluan, Han Lin, Wu Peng, Wang Guan, Ma Xiaoyu

  J. Semicond.  2009, 30(6): 064005
  doi: 10.1088/1674-4926/30/6/064005

  Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

  Hu Yuehui, Zhang Xiangwen, Qu Minghao, Wang Lifu, Zeng Tao, Xie Yaojiang

  J. Semicond.  2009, 30(6): 064006
  doi: 10.1088/1674-4926/30/6/064006

  A novel method using SiNW to measure stress in cantilevers

  Jiang Yanfeng, Wang Jianping

  J. Semicond.  2009, 30(6): 064007
  doi: 10.1088/1674-4926/30/6/064007

  Influence of electron irradiation on the switching speed in insulated gate bipolar transistors

  Lu Shuojin, Wang Lixin, Lu Jiang, Liu Gang, Han Zhengsheng

  J. Semicond.  2009, 30(6): 064008
  doi: 10.1088/1674-4926/30/6/064008

  Experimental study on the single event latchup simulated by a pulse laser

  Yang Shiyu, Cao Zhou, Li Danming, Xue Yuxiong, Tian Kai

  J. Semicond.  2009, 30(6): 064009
  doi: 10.1088/1674-4926/30/6/064009

• SEMICONDUCTOR INTEGRATED CIRCUITS

  An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

  Feng Xiaoxing, Zhang Xing, Ge Binjie, Wang Xin'an

  J. Semicond.  2009, 30(6): 065001
  doi: 10.1088/1674-4926/30/6/065001

  Current mode ADC design in a 0.5-μm CMOS process

  Sun Yong, Lai Fengchang, Ye Yizheng

  J. Semicond.  2009, 30(6): 065002
  doi: 10.1088/1674-4926/30/6/065002

  A CMOS image-rejection mixer with 58-dB IRR for DTV receivers

  Yuan Shuai, Li Zhiqun, Huang Jing, Wang Zhigong

  J. Semicond.  2009, 30(6): 065003
  doi: 10.1088/1674-4926/30/6/065003

  Adaptive digital calibration techniques for narrow band low-IF receivers with on-chip PLL

  Li Juan, Zhang Huajiang, Zhao Feng, Hong Zhiliang

  J. Semicond.  2009, 30(6): 065004
  doi: 10.1088/1674-4926/30/6/065004

  Robustness aware high performance high fan-in domino OR logic design

  Gong Na, Wang Jinhui, Guo Baozeng, Wang Yongqing, Cao Xiaobing, Tian Xiuli

  J. Semicond.  2009, 30(6): 065005
  doi: 10.1088/1674-4926/30/6/065005

  A 60-dB linear VGA with novel exponential gain approximation

  Zhou Jiaye, Tan Xi, Wang Junyu, Tang Zhangwen, Min Hao

  J. Semicond.  2009, 30(6): 065006
  doi: 10.1088/1674-4926/30/6/065006

  A low power high linearity baseband for a direct conversation CMMB tuner

  Ma Heping, Yuan Fang, Shi Yin, Lan Xiaoming, Dai Fa Foster

  J. Semicond.  2009, 30(6): 065007
  doi: 10.1088/1674-4926/30/6/065007

  Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

  Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua

  J. Semicond.  2009, 30(6): 065008
  doi: 10.1088/1674-4926/30/6/065008

  A cascaded charge-sharing technique for an EDP-efficient match-line design in CAMs

  Zhang Jianwei, Ye Yizheng, Liu Binda, Lan Jinbao

  J. Semicond.  2009, 30(6): 065009
  doi: 10.1088/1674-4926/30/6/065009

  Designand implementation of a delay-optimized universal programmable routing circuit for FPGAs

  Wu Fang, Zhang Huowen, Lai Jinmei, Wang Yuan, Chen Liguang, Duan Lei, Tong Jiarong

  J. Semicond.  2009, 30(6): 065010
  doi: 10.1088/1674-4926/30/6/065010

• SEMICONDUCTOR TECHNOLOGY

  Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates

  Shu Zhen, Wan Jing, Lu Bingrui, Xie Shenqi, Chen Yifang, Qu Xinping, Liu Ran

  J. Semicond.  2009, 30(6): 066001
  doi: 10.1088/1674-4926/30/6/066001

  Overlay mark optimization for thick-film resist overlay metrology

  Zhu Liang, Li Jie, Zhou Congshu, Gu Yili, Yang Huayue

  J. Semicond.  2009, 30(6): 066002
  doi: 10.1088/1674-4926/30/6/066002

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