Archive

Volume 30, Issue 8, Aug 2009

• INVITED PAPERS

  Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode

  Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, Lü Bin, Lü Jianguo, Wang Lei, Jin Yizheng, Jiang Jie, Xue Ya, Zhang Jun, Lin Shisheng, Yang Dan

  J. Semicond.  2009, 30(8): 081001
  doi: 10.1088/1674-4926/30/8/081001

• SEMICONDUCTOR PHYSICS

  Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure

  Zhou Xiaojuan, Ban Shiliang

  J. Semicond.  2009, 30(8): 082001
  doi: 10.1088/1674-4926/30/8/082001

  Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

  Xu Yadong, Xu Lingyan, Wang Tao, Zha Gangqiang, Fu Li, Jie Wanqi, Sellin P

  J. Semicond.  2009, 30(8): 082002
  doi: 10.1088/1674-4926/30/8/082002

  Visible photoluminescence of porous silicon covered with an HfON dielectric layer

  Jiang Ran, Zhang Yan

  J. Semicond.  2009, 30(8): 082003
  doi: 10.1088/1674-4926/30/8/082003

  Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film

  Zhang Yan, Jiang Ran

  J. Semicond.  2009, 30(8): 082004
  doi: 10.1088/1674-4926/30/8/082004

  TDDB improvement by optimized processes on metal–insulator–silicon capacitors with atomic layer deposition of Al2O3 and multi layers of TiN film structure

  Peng Kun, Wang Biao, Xiao Deyuan, Qiu Shengfen, Lin D C, Wu Ping, Yang S F

  J. Semicond.  2009, 30(8): 082005
  doi: 10.1088/1674-4926/30/8/082005

• SEMICONDUCTOR MATERIALS

  Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition

  Liang Ting, Li Junhong, Du Wenlong, Xue Chenyang, Zhang Wendong

  J. Semicond.  2009, 30(8): 083001
  doi: 10.1088/1674-4926/30/8/083001

  Luminescence spectroscopy of ion implanted AlN bulk single crystal

  Li Weiwei, Zhao Youwen, Dong Zhiyuan, Yang Jun, Hu Weijie, Ke Jianhong, Huang Yan, Gao Zhenhua

  J. Semicond.  2009, 30(8): 083002
  doi: 10.1088/1674-4926/30/8/083002

  Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

  Xie Jing, Liu Yunfei, Yang Jinling, Tang Longjuan, Yang Fuhua

  J. Semicond.  2009, 30(8): 083003
  doi: 10.1088/1674-4926/30/8/083003

  Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

  Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun, Wang Shuangqing

  J. Semicond.  2009, 30(8): 083004
  doi: 10.1088/1674-4926/30/8/083004

  Synthesis of ZnS whiskers and their photoluminescence properties

  Du Yuanyuan, Jie Wanqi, Li Huanyong

  J. Semicond.  2009, 30(8): 083005
  doi: 10.1088/1674-4926/30/8/083005

  Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

  Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin, Yu Yude

  J. Semicond.  2009, 30(8): 083006
  doi: 10.1088/1674-4926/30/8/083006

  NTC and electrical properties of nickel and gold doped n-type silicon material

  Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, Cong Xiuyun

  J. Semicond.  2009, 30(8): 083007
  doi: 10.1088/1674-4926/30/8/083007

• SEMICONDUCTOR DEVICES

  (NH₄)₂S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights

  Hu Aibin, Wang Wenwu, Xu Qiuxia

  J. Semicond.  2009, 30(8): 084001
  doi: 10.1088/1674-4926/30/8/084001

  Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

  Fu Xiaojun, Zhang Haiying, Guo Changxin, Xu Jingbo, Li Ming

  J. Semicond.  2009, 30(8): 084002
  doi: 10.1088/1674-4926/30/8/084002

  A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks

  He Jin, Ma Chenyue, Zhang Lining, Zhang Jian, Zhang Xing

  J. Semicond.  2009, 30(8): 084003
  doi: 10.1088/1674-4926/30/8/084003

  Noise performance in AlGaN/GaN HEMTs under high drain bias

  Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Liu Jian

  J. Semicond.  2009, 30(8): 084004
  doi: 10.1088/1674-4926/30/8/084004

  Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization

  Fu Jun

  J. Semicond.  2009, 30(8): 084005
  doi: 10.1088/1674-4926/30/8/084005

  A new double gate SOI LDMOS with a step doping profile in the drift region

  Luo Xiaorong, Zhang Wei, Gu Jingjing, Liao Hong, Zhang Bo, Li Zhaoji

  J. Semicond.  2009, 30(8): 084006
  doi: 10.1088/1674-4926/30/8/084006

  Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology

  Jiang Yuxi, Li Jiao, Ran Feng, Cao Jialin, Yang Dianxiong

  J. Semicond.  2009, 30(8): 084007
  doi: 10.1088/1674-4926/30/8/084007

  Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

  Feng Song, Gao Yong, Yang Yuan, Feng Yuchun

  J. Semicond.  2009, 30(8): 084008
  doi: 10.1088/1674-4926/30/8/084008

  AlGaInP LEDs with surface anti-reflecting structure

  Chen Yixin, Shen Guangdi, Li Jianjun, Han Jinru, Xu Chen

  J. Semicond.  2009, 30(8): 084009
  doi: 10.1088/1674-4926/30/8/084009

  Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells

  Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, Zhu Meifang

  J. Semicond.  2009, 30(8): 084010
  doi: 10.1088/1674-4926/30/8/084010

  Performance analysis of solar cell arrays in concentrating light intensity

  Xu Yongfeng, Li Ming, Wang Liuling, Lin Wenxian, Xiang Ming, Zhang Xinghua, Wang Yunfeng, Wei Shengxian

  J. Semicond.  2009, 30(8): 084011
  doi: 10.1088/1674-4926/30/8/084011

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Testing content addressable memories with physical fault models

  Ma Lin, Yang Xu, Zhong Shiqiang, Chen Yunji

  J. Semicond.  2009, 30(8): 085001
  doi: 10.1088/1674-4926/30/8/085001

  A novel fully differential telescopic operational transconductance amplifier

  Li Tianwang, Ye Bo, Jiang Jinguang

  J. Semicond.  2009, 30(8): 085002
  doi: 10.1088/1674-4926/30/8/085002

  Design of a monolithic millimeter-wave doubly-balanced mixer in GaAs

  Xu Leijun, Wang Zhigong, Li Qin

  J. Semicond.  2009, 30(8): 085003
  doi: 10.1088/1674-4926/30/8/085003

  An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

  Gao Peijun, Oh N J, Min Hao

  J. Semicond.  2009, 30(8): 085004
  doi: 10.1088/1674-4926/30/8/085004

  An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

  Chen Fangxiong, Lin Min, Ma Heping, Jia Hailong, Shi Yin, Dai Forster

  J. Semicond.  2009, 30(8): 085005
  doi: 10.1088/1674-4926/30/8/085005

  An offset-insensitive switched-capacitor bandgap reference with continuous output

  Zheng Peng, Yan Wei, Zhang Ke, Li Wenhong

  J. Semicond.  2009, 30(8): 085006
  doi: 10.1088/1674-4926/30/8/085006

  A 1.8 V LDO voltage regulator with foldback current limit and thermal protection

  Liu Zhiming, Fu Zhongqian, Huang Lu, Xi Tianzuo

  J. Semicond.  2009, 30(8): 085007
  doi: 10.1088/1674-4926/30/8/085007

  Design for an IO block array in a tile-based FPGA

  Ding Guangxin, Chen Lingdou, Liu Zhongli

  J. Semicond.  2009, 30(8): 085008
  doi: 10.1088/1674-4926/30/8/085008

  A low power cyclic ADC design for a wireless monitoring system for orthopedic implants

  Chen Yi, Li Fule, Chen Hong, Zhang Chun, Wang Zhihua

  J. Semicond.  2009, 30(8): 085009
  doi: 10.1088/1674-4926/30/8/085009

  A VCO sub-band selection circuit for fast PLL calibration

  Song Ying, Wang Yuan, Jia Song, Zhao Baoying

  J. Semicond.  2009, 30(8): 085010
  doi: 10.1088/1674-4926/30/8/085010

  A low-noise PLL design achieved by optimizing the loop bandwidth

  Bai Chuang, Zhao Zhenyu, Zhang Minxuan

  J. Semicond.  2009, 30(8): 085011
  doi: 10.1088/1674-4926/30/8/085011

  Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory

  Shi Weihua, Hong Zhiliang, Hu Chaohong, Kang Yong

  J. Semicond.  2009, 30(8): 085012
  doi: 10.1088/1674-4926/30/8/085012

• SEMICONDUCTOR TECHNOLOGY

  Wafer level hermetic packaging based on Cu–Sn isothermal solidification technology

  Cao Yuhan, Luo Le

  J. Semicond.  2009, 30(8): 086001
  doi: 10.1088/1674-4926/30/8/086001

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