Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode
J. Semicond. 2009, 30(8): 081001
doi: 10.1088/1674-4926/30/8/081001
J. Semicond. 2009, 30(8): 082001
doi: 10.1088/1674-4926/30/8/082001
Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
J. Semicond. 2009, 30(8): 082002
doi: 10.1088/1674-4926/30/8/082002
Visible photoluminescence of porous silicon covered with an HfON dielectric layer
J. Semicond. 2009, 30(8): 082003
doi: 10.1088/1674-4926/30/8/082003
J. Semicond. 2009, 30(8): 082004
doi: 10.1088/1674-4926/30/8/082004
Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition
J. Semicond. 2009, 30(8): 083001
doi: 10.1088/1674-4926/30/8/083001
Luminescence spectroscopy of ion implanted AlN bulk single crystal
J. Semicond. 2009, 30(8): 083002
doi: 10.1088/1674-4926/30/8/083002
J. Semicond. 2009, 30(8): 083003
doi: 10.1088/1674-4926/30/8/083003
Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon
J. Semicond. 2009, 30(8): 083004
doi: 10.1088/1674-4926/30/8/083004
Synthesis of ZnS whiskers and their photoluminescence properties
J. Semicond. 2009, 30(8): 083005
doi: 10.1088/1674-4926/30/8/083005
J. Semicond. 2009, 30(8): 083006
doi: 10.1088/1674-4926/30/8/083006
NTC and electrical properties of nickel and gold doped n-type silicon material
J. Semicond. 2009, 30(8): 083007
doi: 10.1088/1674-4926/30/8/083007
(NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights
J. Semicond. 2009, 30(8): 084001
doi: 10.1088/1674-4926/30/8/084001
Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors
J. Semicond. 2009, 30(8): 084002
doi: 10.1088/1674-4926/30/8/084002
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
J. Semicond. 2009, 30(8): 084003
doi: 10.1088/1674-4926/30/8/084003
Noise performance in AlGaN/GaN HEMTs under high drain bias
J. Semicond. 2009, 30(8): 084004
doi: 10.1088/1674-4926/30/8/084004
J. Semicond. 2009, 30(8): 084005
doi: 10.1088/1674-4926/30/8/084005
A new double gate SOI LDMOS with a step doping profile in the drift region
J. Semicond. 2009, 30(8): 084006
doi: 10.1088/1674-4926/30/8/084006
J. Semicond. 2009, 30(8): 084007
doi: 10.1088/1674-4926/30/8/084007
Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide
J. Semicond. 2009, 30(8): 084008
doi: 10.1088/1674-4926/30/8/084008
AlGaInP LEDs with surface anti-reflecting structure
J. Semicond. 2009, 30(8): 084009
doi: 10.1088/1674-4926/30/8/084009
J. Semicond. 2009, 30(8): 084010
doi: 10.1088/1674-4926/30/8/084010
Performance analysis of solar cell arrays in concentrating light intensity
J. Semicond. 2009, 30(8): 084011
doi: 10.1088/1674-4926/30/8/084011
Testing content addressable memories with physical fault models
J. Semicond. 2009, 30(8): 085001
doi: 10.1088/1674-4926/30/8/085001
A novel fully differential telescopic operational transconductance amplifier
J. Semicond. 2009, 30(8): 085002
doi: 10.1088/1674-4926/30/8/085002
Design of a monolithic millimeter-wave doubly-balanced mixer in GaAs
J. Semicond. 2009, 30(8): 085003
doi: 10.1088/1674-4926/30/8/085003
An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process
J. Semicond. 2009, 30(8): 085004
doi: 10.1088/1674-4926/30/8/085004
An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning
J. Semicond. 2009, 30(8): 085005
doi: 10.1088/1674-4926/30/8/085005
An offset-insensitive switched-capacitor bandgap reference with continuous output
J. Semicond. 2009, 30(8): 085006
doi: 10.1088/1674-4926/30/8/085006
A 1.8 V LDO voltage regulator with foldback current limit and thermal protection
J. Semicond. 2009, 30(8): 085007
doi: 10.1088/1674-4926/30/8/085007
Design for an IO block array in a tile-based FPGA
J. Semicond. 2009, 30(8): 085008
doi: 10.1088/1674-4926/30/8/085008
A low power cyclic ADC design for a wireless monitoring system for orthopedic implants
J. Semicond. 2009, 30(8): 085009
doi: 10.1088/1674-4926/30/8/085009
A VCO sub-band selection circuit for fast PLL calibration
J. Semicond. 2009, 30(8): 085010
doi: 10.1088/1674-4926/30/8/085010
A low-noise PLL design achieved by optimizing the loop bandwidth
J. Semicond. 2009, 30(8): 085011
doi: 10.1088/1674-4926/30/8/085011
Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory
J. Semicond. 2009, 30(8): 085012
doi: 10.1088/1674-4926/30/8/085012
Wafer level hermetic packaging based on Cu–Sn isothermal solidification technology
J. Semicond. 2009, 30(8): 086001
doi: 10.1088/1674-4926/30/8/086001