J. Semicond. 2009, 30(9): 093001
doi: 10.1088/1674-4926/30/9/093001
Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers
J. Semicond. 2009, 30(9): 093002
doi: 10.1088/1674-4926/30/9/093002
Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications
J. Semicond. 2009, 30(9): 093003
doi: 10.1088/1674-4926/30/9/093003
Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate
J. Semicond. 2009, 30(9): 093004
doi: 10.1088/1674-4926/30/9/093004
Fabrication of strained Ge film using a thin SiGe virtual substrate
J. Semicond. 2009, 30(9): 093005
doi: 10.1088/1674-4926/30/9/093005
Epitaxial growth on 4H-SiC by TCS as a silicon precursor
J. Semicond. 2009, 30(9): 093006
doi: 10.1088/1674-4926/30/9/093006
Influence of body contact of SOI MOSFETs on the thermal conductance of devices
J. Semicond. 2009, 30(9): 094001
doi: 10.1088/1674-4926/30/9/094001
J. Semicond. 2009, 30(9): 094002
doi: 10.1088/1674-4926/30/9/094002
Analytical models for the base transit time of a bipolar transistor with double base epilayers
J. Semicond. 2009, 30(9): 094003
doi: 10.1088/1674-4926/30/9/094003
Influence of a tilted cavity on quantum-dot optoelectronic active devices
J. Semicond. 2009, 30(9): 094004
doi: 10.1088/1674-4926/30/9/094004
J. Semicond. 2009, 30(9): 094005
doi: 10.1088/1674-4926/30/9/094005
Active layer self-protection process for organic field-effect transistors
J. Semicond. 2009, 30(9): 094006
doi: 10.1088/1674-4926/30/9/094006
Crosstalk of HgCdTe LWIR n-on-p diode arrays
J. Semicond. 2009, 30(9): 094007
doi: 10.1088/1674-4926/30/9/094007
High-performance electroabsorption modulator
J. Semicond. 2009, 30(9): 094008
doi: 10.1088/1674-4926/30/9/094008
An X-band GaN combined solid-state power amplifier
J. Semicond. 2009, 30(9): 095001
doi: 10.1088/1674-4926/30/9/095001
A 4.2–5 GHz, low phase noise LC-VCO with constant bandwidth and small tuning gain
J. Semicond. 2009, 30(9): 095002
doi: 10.1088/1674-4926/30/9/095002
A high speed direct digital frequency synthesizer realized by a segmented nonlinear DAC
J. Semicond. 2009, 30(9): 095003
doi: 10.1088/1674-4926/30/9/095003
J. Semicond. 2009, 30(9): 095004
doi: 10.1088/1674-4926/30/9/095004
Low modulation index RF signal detection for a passive UHF RFID transponder
J. Semicond. 2009, 30(9): 095005
doi: 10.1088/1674-4926/30/9/095005
A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system
J. Semicond. 2009, 30(9): 095006
doi: 10.1088/1674-4926/30/9/095006
A low cost integrated transceiver for mobile UHF passive RFID reader applications
J. Semicond. 2009, 30(9): 095007
doi: 10.1088/1674-4926/30/9/095007
A dual-band reconfigurable direct-conversion receiver RF front-end
J. Semicond. 2009, 30(9): 095008
doi: 10.1088/1674-4926/30/9/095008
5-Gb/s 0.18-m CMOS 2 : 1 multiplexer with integrated clock extraction
J. Semicond. 2009, 30(9): 095009
doi: 10.1088/1674-4926/30/9/095009
Security strategy of powered-off SRAM for resisting physical attack to data remanence
J. Semicond. 2009, 30(9): 095010
doi: 10.1088/1674-4926/30/9/095010
A multi-standard active-RC filter with accurate tuning system
J. Semicond. 2009, 30(9): 095011
doi: 10.1088/1674-4926/30/9/095011
A single-inductor dual-output switching converter with average current mode control
J. Semicond. 2009, 30(9): 095012
doi: 10.1088/1674-4926/30/9/095012
J. Semicond. 2009, 30(9): 095013
doi: 10.1088/1674-4926/30/9/095013
A 2.8 ppm/℃ high PSRR BiCMOS bandgap voltage reference
J. Semicond. 2009, 30(9): 095014
doi: 10.1088/1674-4926/30/9/095014
An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC
J. Semicond. 2009, 30(9): 095015
doi: 10.1088/1674-4926/30/9/095015
Design and fabrication of a planar patch-clamp substrate using a silicon-on-insulator wafer
J. Semicond. 2009, 30(9): 096001
doi: 10.1088/1674-4926/30/9/096001
Two-step Ni silicide process and influence of protective N2 gas
J. Semicond. 2009, 30(9): 096002
doi: 10.1088/1674-4926/30/9/096002
Lithography-independent and large scale fabrication of a metal electrode nanogap
J. Semicond. 2009, 30(9): 096003
doi: 10.1088/1674-4926/30/9/096003
Lithography process for KrF in the sub-0.11 μm node
J. Semicond. 2009, 30(9): 096004
doi: 10.1088/1674-4926/30/9/096004
J. Semicond. 2009, 30(9): 096005
doi: 10.1088/1674-4926/30/9/096005