Archive

Volume 30, Issue 9, Sep 2009

• SEMICONDUCTOR MATERIALS

  Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

  Duan Huantao, Hao Yue, Zhang Jincheng

  J. Semicond.  2009, 30(9): 093001
  doi: 10.1088/1674-4926/30/9/093001

  Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers

  Zhang Shuai, Zhang Zhengxuan, Bi Dawei, Chen Ming, Tian Hao, Yu Wenjie, Wang Ru, Liu Zhangli

  J. Semicond.  2009, 30(9): 093002
  doi: 10.1088/1674-4926/30/9/093002

  Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications

  Mao Ping, Zhang Zhigang, Pan Liyang, Xu Jun, Chen Peiyi

  J. Semicond.  2009, 30(9): 093003
  doi: 10.1088/1674-4926/30/9/093003

  Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

  Tian Mi, Xiu Xiangqian, Zhang Rong, Hua Xuemei, Liu Zhanhui, Han Ping, Xie Zili, Zheng Youdou

  J. Semicond.  2009, 30(9): 093004
  doi: 10.1088/1674-4926/30/9/093004

  Fabrication of strained Ge film using a thin SiGe virtual substrate

  Guo Lei, Zhao Shuo, Wang Jing, Liu Zhihong, Xu Jun

  J. Semicond.  2009, 30(9): 093005
  doi: 10.1088/1674-4926/30/9/093005

  Epitaxial growth on 4H-SiC by TCS as a silicon precursor

  Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin

  J. Semicond.  2009, 30(9): 093006
  doi: 10.1088/1674-4926/30/9/093006

• SEMICONDUCTOR DEVICES

  Influence of body contact of SOI MOSFETs on the thermal conductance of devices

  Lu Shuojin, Liu Mengxin, Han Zhengsheng

  J. Semicond.  2009, 30(9): 094001
  doi: 10.1088/1674-4926/30/9/094001

  Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer

  Yang Hua, Wang Xiaofeng, Ruan Jun, Li Zhicong, Yi Xiaoyan, Duan Yao, Zeng Yiping, Wang Guohong

  J. Semicond.  2009, 30(9): 094002
  doi: 10.1088/1674-4926/30/9/094002

  Analytical models for the base transit time of a bipolar transistor with double base epilayers

  Zhang Qian, Zhang Yuming, Zhang Yimen

  J. Semicond.  2009, 30(9): 094003
  doi: 10.1088/1674-4926/30/9/094003

  Influence of a tilted cavity on quantum-dot optoelectronic active devices

  Liu Wanglai, Xu Bo, Liang Ping, Hu Ying, Sun Hong, Lu Xueqin, Wang Zhanguo

  J. Semicond.  2009, 30(9): 094004
  doi: 10.1088/1674-4926/30/9/094004

  A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current

  Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Han Zhengsheng

  J. Semicond.  2009, 30(9): 094005
  doi: 10.1088/1674-4926/30/9/094005

  Active layer self-protection process for organic field-effect transistors

  Liu Ge, Liu Ming, Shang Liwei, Tu Deyu, Liu Xinghua, Wang Hong, Liu Jiang

  J. Semicond.  2009, 30(9): 094006
  doi: 10.1088/1674-4926/30/9/094006

  Crosstalk of HgCdTe LWIR n-on-p diode arrays

  Sun Yinghui, Zhang Bo, Yu Meifang, Liao Qingjun, Zhang Yan, Wen Xin, Jiang Peilu, Hu Xiaoning, Dai Ning

  J. Semicond.  2009, 30(9): 094007
  doi: 10.1088/1674-4926/30/9/094007

  High-performance electroabsorption modulator

  Zhang Wei, Pan Jiaoqing, Zhu Hongliang, Wang Huan, Wang Wei

  J. Semicond.  2009, 30(9): 094008
  doi: 10.1088/1674-4926/30/9/094008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  An X-band GaN combined solid-state power amplifier

  Chen Chi, Hao Yue, Feng Hui, Yang Linan, Ma Xiaohua, Duan Huantao, Hu Shigang

  J. Semicond.  2009, 30(9): 095001
  doi: 10.1088/1674-4926/30/9/095001

  A 4.2–5 GHz, low phase noise LC-VCO with constant bandwidth and small tuning gain

  Xu Conghui, Xi Jingtian, Lu Lei, Yang Yuqing, Tan Xi, Yan Na, Min Hao

  J. Semicond.  2009, 30(9): 095002
  doi: 10.1088/1674-4926/30/9/095002

  A high speed direct digital frequency synthesizer realized by a segmented nonlinear DAC

  Yuan Ling, Ni Weining, Hao Zhikun, Shi Yin, Li Wenchang

  J. Semicond.  2009, 30(9): 095003
  doi: 10.1088/1674-4926/30/9/095003

  A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder

  Liu Wei, Li Wei, Ren Peng, Lin Qinglong, Zhang Shengdong, Wang Yangyuan

  J. Semicond.  2009, 30(9): 095004
  doi: 10.1088/1674-4926/30/9/095004

  Low modulation index RF signal detection for a passive UHF RFID transponder

  Liu Zhongqi, Zhang Chun, Li Yongming, Wang Zhihua

  J. Semicond.  2009, 30(9): 095005
  doi: 10.1088/1674-4926/30/9/095005

  A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system

  Zheng Yongzheng, Xia Lingli, Li Weinan, Huang Yumei, Hong Zhiliang

  J. Semicond.  2009, 30(9): 095006
  doi: 10.1088/1674-4926/30/9/095006

  A low cost integrated transceiver for mobile UHF passive RFID reader applications

  Wang Jingchao, Zhang Chun, Chi Baoyong, Wang Ziqiang, Li Fule, Wang Zhihua

  J. Semicond.  2009, 30(9): 095007
  doi: 10.1088/1674-4926/30/9/095007

  A dual-band reconfigurable direct-conversion receiver RF front-end

  Yao Guoqin, Chi Baoyong, Zhang Chun, Wang Zhihua

  J. Semicond.  2009, 30(9): 095008
  doi: 10.1088/1674-4926/30/9/095008

  5-Gb/s 0.18-m CMOS 2 : 1 multiplexer with integrated clock extraction

  Zhang Changchun, Wang Zhigong, Shi Si, Miao Peng, Tian Ling

  J. Semicond.  2009, 30(9): 095009
  doi: 10.1088/1674-4926/30/9/095009

  Security strategy of powered-off SRAM for resisting physical attack to data remanence

  Yu Kai, Zou Xuecheng, Yu Guoyi, Wang Weixu

  J. Semicond.  2009, 30(9): 095010
  doi: 10.1088/1674-4926/30/9/095010

  A multi-standard active-RC filter with accurate tuning system

  Ma Heping, Yuan Fang, Shi Yin, Dai F F

  J. Semicond.  2009, 30(9): 095011
  doi: 10.1088/1674-4926/30/9/095011

  A single-inductor dual-output switching converter with average current mode control

  Xu Weiwei, Zhu Xiaoting, Hong Zhiliang, Killat D

  J. Semicond.  2009, 30(9): 095012
  doi: 10.1088/1674-4926/30/9/095012

  A controllable resistor and its applications in pole–zero tracking frequency compensation methods for LDOs

  Wang Yi, He Lenian, Ning Zhihua, Shao Yali

  J. Semicond.  2009, 30(9): 095013
  doi: 10.1088/1674-4926/30/9/095013

  A 2.8 ppm/℃ high PSRR BiCMOS bandgap voltage reference

  Ming Xin, Lu Yang, Zhang Bo, Zhou Zekun

  J. Semicond.  2009, 30(9): 095014
  doi: 10.1088/1674-4926/30/9/095014

  An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC

  Zheng Ran, Wei Tingcun, Wang Jia, Gao Deyuan

  J. Semicond.  2009, 30(9): 095015
  doi: 10.1088/1674-4926/30/9/095015

• SEMICONDUCTOR TECHNOLOGY

  Design and fabrication of a planar patch-clamp substrate using a silicon-on-insulator wafer

  Zhang Zhenlong, Liu Xiangyang, Mao Yanli

  J. Semicond.  2009, 30(9): 096001
  doi: 10.1088/1674-4926/30/9/096001

  Two-step Ni silicide process and influence of protective N2 gas

  Shang Haiping, Xu Qiuxia

  J. Semicond.  2009, 30(9): 096002
  doi: 10.1088/1674-4926/30/9/096002

  Lithography-independent and large scale fabrication of a metal electrode nanogap

  Li Yan, Wang Xiaofeng, Zhang Jiayong, Wang Xiaodong, Fan Zhongchao, Yang Fuhua

  J. Semicond.  2009, 30(9): 096003
  doi: 10.1088/1674-4926/30/9/096003

  Lithography process for KrF in the sub-0.11 μm node

  Zhao Yuhang, Zhu Jun, Tong Jiarong, Zeng Xuan

  J. Semicond.  2009, 30(9): 096004
  doi: 10.1088/1674-4926/30/9/096004

  Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

  Tang Longjuan, Zhu Yinfang, Yang Jinling, Li Yan, Zhou Wei, Xie Jing, Liu Yunfei, Yang Fuhua

  J. Semicond.  2009, 30(9): 096005
  doi: 10.1088/1674-4926/30/9/096005

Journal of Semiconductors © 2017 All Rights Reserved