Archive

Volume 31, Issue 10, Oct 2010

• SEMICONDUCTOR PHYSICS

  Dose-rate dependence of optically stimulated luminescence signal

  Wei Pingqiang, Chen Zhaoyang, Fan Yanwei, Sun Yurun, Zhao Yun

  J. Semicond.  2010, 31(10): 102001
  doi: 10.1088/1674-4926/31/10/102001

• SEMICONDUCTOR MATERIALS

  Electrical and optical properties of deep ultraviolet transparent conductive Ga₂O₃/ITO films by magnetron sputtering

  Liu Jianjun, Yan Jinliang, Shi Liang, Li Ting

  J. Semicond.  2010, 31(10): 103001
  doi: 10.1088/1674-4926/31/10/103001

  Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

  Wu Xiaopeng, Chen Xiaoqing, Sun Lijie, Mao Shun, Fu Zhuxi

  J. Semicond.  2010, 31(10): 103002
  doi: 10.1088/1674-4926/31/10/103002

  Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell

  Deng Qingwen, Wang Xiaoliang, Xiao Hongling, Ma Zeyu, Zhang Xiaobin, Hou Qifeng, Li Jinmin, Wang Zhanguo

  J. Semicond.  2010, 31(10): 103003
  doi: 10.1088/1674-4926/31/10/103003

• SEMICONDUCTOR DEVICES

  Nanoscale strained-Si MOSFET physics and modeling approaches: a review

  Amit Chaudhry, J. N. Roy, Garima Joshi

  J. Semicond.  2010, 31(10): 104001
  doi: 10.1088/1674-4926/31/10/104001

  Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

  Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu

  J. Semicond.  2010, 31(10): 104002
  doi: 10.1088/1674-4926/31/10/104002

  Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures

  Chen Yanhu, Shen Huajun, Liu Xinyu, Xu Hui, Li Ling, Li Huijun

  J. Semicond.  2010, 31(10): 104003
  doi: 10.1088/1674-4926/31/10/104003

  MEXTRAM model based SiGe HBT large-signal modeling

  Han Bo, Li Shoulin, Cheng Jiali, Yin Qiuyan, Gao Jianjun

  J. Semicond.  2010, 31(10): 104004
  doi: 10.1088/1674-4926/31/10/104004

  Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

  Li Guoyu, Zhang Yejin, Li Xiaojian, Tian Lilin

  J. Semicond.  2010, 31(10): 104005
  doi: 10.1088/1674-4926/31/10/104005

  Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

  Wen Feng, Liu Deming, Huang Lirong

  J. Semicond.  2010, 31(10): 104006
  doi: 10.1088/1674-4926/31/10/104006

  Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

  Rao Lan, Song Guofeng, Chen Lianghui

  J. Semicond.  2010, 31(10): 104007
  doi: 10.1088/1674-4926/31/10/104007

  A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

  Zhu Peng, Pan Liyang, Gu Haiming, Qiao Fengying, Deng Ning, Xu Jun

  J. Semicond.  2010, 31(10): 104008
  doi: 10.1088/1674-4926/31/10/104008

  Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

  Gu Haiming, Pan Liyang, Zhu Peng, Wu Dong, Zhang Zhigang, Xu Jun

  J. Semicond.  2010, 31(10): 104009
  doi: 10.1088/1674-4926/31/10/104009

  A compressed wide period-tunable grating working at low voltage

  Liu Xiang, Li Tie, Ming Anjie, Wang Yuelin

  J. Semicond.  2010, 31(10): 104010
  doi: 10.1088/1674-4926/31/10/104010

  MEMS magnetic field sensor based on silicon bridge structure

  Du Guangtao, Chen Xiangdong, Lin Qibin, Li Hui, Guo Huihui

  J. Semicond.  2010, 31(10): 104011
  doi: 10.1088/1674-4926/31/10/104011

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A low-voltage sense amplifier for high-performance embedded flash memory

  Liu Jiang, Wang Xueqiang, Wang Qin, Wu Dong, Zhang Zhigang, Pan Liyang, Liu Ming

  J. Semicond.  2010, 31(10): 105001
  doi: 10.1088/1674-4926/31/10/105001

  Short locking time and low jitter phase-locked loop based on slope charge pump control

  Guo Zhongjie, Liu Youbao, Wu Longsheng, Wang Xihu, Tang Wei

  J. Semicond.  2010, 31(10): 105002
  doi: 10.1088/1674-4926/31/10/105002

  A direct-conversion WLAN transceiver baseband with DC offset compensation and carrier leakage reduction

  Yuan Fang, Yan Jun, Ma Heping, Shi Yin, Dai Fa Foster

  J. Semicond.  2010, 31(10): 105003
  doi: 10.1088/1674-4926/31/10/105003

  Design of an analog front-end for ambulatory biopotential measurement systems

  Wang Jiazhen, Xu Jun, Zheng Lirong, Ren Junyan

  J. Semicond.  2010, 31(10): 105004
  doi: 10.1088/1674-4926/31/10/105004

  8.64–11.62 GHz CMOS VCO and divider in a zero-IF 802.11a/b/g WLAN and Bluetooth application

  Sun Yu, Mei Niansong, Lu Bo, Huang Yumei, Hong Zhiliang

  J. Semicond.  2010, 31(10): 105005
  doi: 10.1088/1674-4926/31/10/105005

  A 12-bit current steering DAC with 2-dimensional gradient-error tolerant switching scheme

  Chen Hao, Liu Liyuan, Li Dongmei, Zhang Chun, Wang Zhihua

  J. Semicond.  2010, 31(10): 105006
  doi: 10.1088/1674-4926/31/10/105006

  A novel 2.2 Gbps LVDS driver circuit design based on 0.35 μm CMOS

  Cai Hua, Li Ping

  J. Semicond.  2010, 31(10): 105007
  doi: 10.1088/1674-4926/31/10/105007

  A design method for process design kit based on an SMIC 65 nm process

  Luo Haiyan, Chen Lan, Yin Minghui

  J. Semicond.  2010, 31(10): 105008
  doi: 10.1088/1674-4926/31/10/105008

  A 10-bit 200-kS/s SAR ADC IP core for a touch screen SoC

  Tong Xingyuan, Yang Yintang, Zhu Zhangming, Sheng Wenfang

  J. Semicond.  2010, 31(10): 105009
  doi: 10.1088/1674-4926/31/10/105009

• SEMICONDUCTOR TECHNOLOGY

  Supercritical carbon dioxide process for releasing stuck cantilever beams

  Hui Yu, Gao Chaoqun, Wang Lei, Jing Yupeng

  J. Semicond.  2010, 31(10): 106001
  doi: 10.1088/1674-4926/31/10/106001

  Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

  Ou Weiying, Zhang Yao, Li Hailing, Zhao Lei, Zhou Chunlan, Diao Hongwei, Liu Min, Lu Weiming, Zhang Jun, Wang Wenjing

  J. Semicond.  2010, 31(10): 106002
  doi: 10.1088/1674-4926/31/10/106002

  Dummy fill effect on CMP planarity

  Zhou Junxiong, Chen Lan, Ruan Wenbiao, Li Zhigang, Shen Weixiang, Ye Tianchun

  J. Semicond.  2010, 31(10): 106003
  doi: 10.1088/1674-4926/31/10/106003

  A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

  Gao Baohong, Liu Yuling, Wang Chenwei, Zhu Yadong, Wang Shengli, Zhou Qiang, Tan Baimei

  J. Semicond.  2010, 31(10): 106004
  doi: 10.1088/1674-4926/31/10/106004

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