Dose-rate dependence of optically stimulated luminescence signal
J. Semicond. 2010, 31(10): 102001
doi: 10.1088/1674-4926/31/10/102001
J. Semicond. 2010, 31(10): 103001
doi: 10.1088/1674-4926/31/10/103001
Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions
J. Semicond. 2010, 31(10): 103002
doi: 10.1088/1674-4926/31/10/103002
Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell
J. Semicond. 2010, 31(10): 103003
doi: 10.1088/1674-4926/31/10/103003
Nanoscale strained-Si MOSFET physics and modeling approaches: a review
J. Semicond. 2010, 31(10): 104001
doi: 10.1088/1674-4926/31/10/104001
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
J. Semicond. 2010, 31(10): 104002
doi: 10.1088/1674-4926/31/10/104002
J. Semicond. 2010, 31(10): 104003
doi: 10.1088/1674-4926/31/10/104003
MEXTRAM model based SiGe HBT large-signal modeling
J. Semicond. 2010, 31(10): 104004
doi: 10.1088/1674-4926/31/10/104004
J. Semicond. 2010, 31(10): 104005
doi: 10.1088/1674-4926/31/10/104005
J. Semicond. 2010, 31(10): 104006
doi: 10.1088/1674-4926/31/10/104006
J. Semicond. 2010, 31(10): 104007
doi: 10.1088/1674-4926/31/10/104007
J. Semicond. 2010, 31(10): 104008
doi: 10.1088/1674-4926/31/10/104008
J. Semicond. 2010, 31(10): 104009
doi: 10.1088/1674-4926/31/10/104009
A compressed wide period-tunable grating working at low voltage
J. Semicond. 2010, 31(10): 104010
doi: 10.1088/1674-4926/31/10/104010
MEMS magnetic field sensor based on silicon bridge structure
J. Semicond. 2010, 31(10): 104011
doi: 10.1088/1674-4926/31/10/104011
A low-voltage sense amplifier for high-performance embedded flash memory
J. Semicond. 2010, 31(10): 105001
doi: 10.1088/1674-4926/31/10/105001
Short locking time and low jitter phase-locked loop based on slope charge pump control
J. Semicond. 2010, 31(10): 105002
doi: 10.1088/1674-4926/31/10/105002
J. Semicond. 2010, 31(10): 105003
doi: 10.1088/1674-4926/31/10/105003
Design of an analog front-end for ambulatory biopotential measurement systems
J. Semicond. 2010, 31(10): 105004
doi: 10.1088/1674-4926/31/10/105004
8.64–11.62 GHz CMOS VCO and divider in a zero-IF 802.11a/b/g WLAN and Bluetooth application
J. Semicond. 2010, 31(10): 105005
doi: 10.1088/1674-4926/31/10/105005
A 12-bit current steering DAC with 2-dimensional gradient-error tolerant switching scheme
J. Semicond. 2010, 31(10): 105006
doi: 10.1088/1674-4926/31/10/105006
A novel 2.2 Gbps LVDS driver circuit design based on 0.35 μm CMOS
J. Semicond. 2010, 31(10): 105007
doi: 10.1088/1674-4926/31/10/105007
A design method for process design kit based on an SMIC 65 nm process
J. Semicond. 2010, 31(10): 105008
doi: 10.1088/1674-4926/31/10/105008
A 10-bit 200-kS/s SAR ADC IP core for a touch screen SoC
J. Semicond. 2010, 31(10): 105009
doi: 10.1088/1674-4926/31/10/105009
Supercritical carbon dioxide process for releasing stuck cantilever beams
J. Semicond. 2010, 31(10): 106001
doi: 10.1088/1674-4926/31/10/106001
Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant
J. Semicond. 2010, 31(10): 106002
doi: 10.1088/1674-4926/31/10/106002
Dummy fill effect on CMP planarity
J. Semicond. 2010, 31(10): 106003
doi: 10.1088/1674-4926/31/10/106003
A new cleaning process for the metallic contaminants on a post-CMP wafer's surface
J. Semicond. 2010, 31(10): 106004
doi: 10.1088/1674-4926/31/10/106004