Origin of varistor properties of tungsten trioxide (WO3) ceramics
J. Semicond. 2010, 31(2): 023001
doi: 10.1088/1674-4926/31/2/023001
A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
J. Semicond. 2010, 31(2): 024001
doi: 10.1088/1674-4926/31/2/024001
Double gate lateral IGBT on partial membrane
J. Semicond. 2010, 31(2): 024002
doi: 10.1088/1674-4926/31/2/024002
Trench gate IGBT structure with floating P region
J. Semicond. 2010, 31(2): 024003
doi: 10.1088/1674-4926/31/2/024003
Carrier stored trench-gate bipolar transistor with p-floating layer
J. Semicond. 2010, 31(2): 024004
doi: 10.1088/1674-4926/31/2/024004
A micron-sized GMR sensor with a CoCrPt hard bias
J. Semicond. 2010, 31(2): 024005
doi: 10.1088/1674-4926/31/2/024005
An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering
J. Semicond. 2010, 31(2): 024006
doi: 10.1088/1674-4926/31/2/024006
A 1.8–2.6 GHz CMOS VCO with switched capacitor array and switched inductor array
J. Semicond. 2010, 31(2): 025001
doi: 10.1088/1674-4926/31/2/025001
High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit
J. Semicond. 2010, 31(2): 025002
doi: 10.1088/1674-4926/31/2/025002
A 0.18 μm CMOS 3–5 GHz broadband flat gain low noise amplifier
J. Semicond. 2010, 31(2): 025003
doi: 10.1088/1674-4926/31/2/025003
A circuit scheme to control current surge for RFID-NVM pumps
J. Semicond. 2010, 31(2): 025004
doi: 10.1088/1674-4926/31/2/025004
A high-performance low-power CMOS AGC for GPS application
J. Semicond. 2010, 31(2): 025005
doi: 10.1088/1674-4926/31/2/025005
Noise-canceling and IP3 improved CMOS RF front-end for DRM/DAB/DVB-H applications
J. Semicond. 2010, 31(2): 025006
doi: 10.1088/1674-4926/31/2/025006
A 12-bit 40 MS/s pipelined ADC with over 80 dB SFDR
J. Semicond. 2010, 31(2): 025007
doi: 10.1088/1674-4926/31/2/025007
An undersampling 14-bit cyclic ADC with over 100-dB SFDR
J. Semicond. 2010, 31(2): 025008
doi: 10.1088/1674-4926/31/2/025008
A 1.4-V 25-mW 600-MS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS
J. Semicond. 2010, 31(2): 025009
doi: 10.1088/1674-4926/31/2/025009
Design and implementation of a high precision and wide range adjustable LED drive controller
J. Semicond. 2010, 31(2): 025010
doi: 10.1088/1674-4926/31/2/025010
Improved low-distortion sigma–delta ADC with DWA for WLAN standards
J. Semicond. 2010, 31(2): 025011
doi: 10.1088/1674-4926/31/2/025011
A snap-shot mode cryogenic readout circuit for QWIP IR FPAs
J. Semicond. 2010, 31(2): 025012
doi: 10.1088/1674-4926/31/2/025012
Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits
J. Semicond. 2010, 31(2): 025013
doi: 10.1088/1674-4926/31/2/025013
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers
J. Semicond. 2010, 31(2): 026001
doi: 10.1088/1674-4926/31/2/026001