Archive

Volume 31, Issue 2, Feb 2010

• SEMICONDUCTOR MATERIALS

  Origin of varistor properties of tungsten trioxide (WO₃) ceramics

  Zhao Hongwang, Hua Zhongqiu, Li Tongye, Wang Yu, Zhao Yong

  J. Semicond.  2010, 31(2): 023001
  doi: 10.1088/1674-4926/31/2/023001

• SEMICONDUCTOR DEVICES

  A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

  Wang Dongfang, Chen Xiaojuan, Liu Xinyu

  J. Semicond.  2010, 31(2): 024001
  doi: 10.1088/1674-4926/31/2/024001

  Double gate lateral IGBT on partial membrane

  Luo Xiaorong, Lei Lei, Zhang Wei, Zhang Bo, Li Zhaoji

  J. Semicond.  2010, 31(2): 024002
  doi: 10.1088/1674-4926/31/2/024002

  Trench gate IGBT structure with floating P region

  Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji

  J. Semicond.  2010, 31(2): 024003
  doi: 10.1088/1674-4926/31/2/024003

  Carrier stored trench-gate bipolar transistor with p-floating layer

  Ma Rongyao, Li Zehong, Hong Xin, Zhang Bo

  J. Semicond.  2010, 31(2): 024004
  doi: 10.1088/1674-4926/31/2/024004

  A micron-sized GMR sensor with a CoCrPt hard bias

  Zheng Yang, Qu Bingjun, Liu Xi, Wei Dan, Wei Fulin, Ren Tianling, Liu Litian

  J. Semicond.  2010, 31(2): 024005
  doi: 10.1088/1674-4926/31/2/024005

  An MWCNT-doped SnO₂ thin film NO₂ gas sensor by RF reactive magnetron sputtering

  Lin Wei, Huang Shizhen, Chen Wenzhe

  J. Semicond.  2010, 31(2): 024006
  doi: 10.1088/1674-4926/31/2/024006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 1.8–2.6 GHz CMOS VCO with switched capacitor array and switched inductor array

  Wang Xiaosong, Huang Shuilong, Chen Pufeng, Zhang Haiying

  J. Semicond.  2010, 31(2): 025001
  doi: 10.1088/1674-4926/31/2/025001

  High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

  Wu Chia-Song, Lin Tah-Yeong, Wu Hsien-Ming

  J. Semicond.  2010, 31(2): 025002
  doi: 10.1088/1674-4926/31/2/025002

  A 0.18 μm CMOS 3–5 GHz broadband flat gain low noise amplifier

  Feng Lisong, Huang Lu, Bai Xuefei, Xi Tianzuo

  J. Semicond.  2010, 31(2): 025003
  doi: 10.1088/1674-4926/31/2/025003

  A circuit scheme to control current surge for RFID-NVM pumps

  Li Ming, Yang Liwu, Kang Jinfeng, Wang Yangyuan

  J. Semicond.  2010, 31(2): 025004
  doi: 10.1088/1674-4926/31/2/025004

  A high-performance low-power CMOS AGC for GPS application

  Lei Qianqian, Xu Qiming, Chen Zhiming, Shi Yin, Lin Min, Jia Hailong

  J. Semicond.  2010, 31(2): 025005
  doi: 10.1088/1674-4926/31/2/025005

  Noise-canceling and IP3 improved CMOS RF front-end for DRM/DAB/DVB-H applications

  Wang Keping, Wang Zhigong, Lei Xuemei

  J. Semicond.  2010, 31(2): 025006
  doi: 10.1088/1674-4926/31/2/025006

  A 12-bit 40 MS/s pipelined ADC with over 80 dB SFDR

  Wei Qi, Yin Xiumei, Han Dandan, Yang Huazhong

  J. Semicond.  2010, 31(2): 025007
  doi: 10.1088/1674-4926/31/2/025007

  An undersampling 14-bit cyclic ADC with over 100-dB SFDR

  Li Weitao, Li Fule, Guo Dandan, Zhang Chun, Wang Zhihua

  J. Semicond.  2010, 31(2): 025008
  doi: 10.1088/1674-4926/31/2/025008

  A 1.4-V 25-mW 600-MS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

  Lin Li, Ren Junyan, Ye Fan

  J. Semicond.  2010, 31(2): 025009
  doi: 10.1088/1674-4926/31/2/025009

  Design and implementation of a high precision and wide range adjustable LED drive controller

  Dai Guoding, Yu Feng, Wang Xuan, Li Weimin

  J. Semicond.  2010, 31(2): 025010
  doi: 10.1088/1674-4926/31/2/025010

  Improved low-distortion sigma–delta ADC with DWA for WLAN standards

  Li Di, Yang Yintang, Zhu Zhangming, Shi Lichun, Wu Xiaofeng, Wang Jiangan

  J. Semicond.  2010, 31(2): 025011
  doi: 10.1088/1674-4926/31/2/025011

  A snap-shot mode cryogenic readout circuit for QWIP IR FPAs

  Ma Wenlong, Shi Yin, Zhang Yaohui, Liu Hongbing, Xie Baojian

  J. Semicond.  2010, 31(2): 025012
  doi: 10.1088/1674-4926/31/2/025012

  Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits

  Sun Yan, Zhang Jiaxing, Zhang Minxuan, Hao Yue

  J. Semicond.  2010, 31(2): 025013
  doi: 10.1088/1674-4926/31/2/025013

• SEMICONDUCTOR TECHNOLOGY

  Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers

  Zheng Zhongshan, Liu Zhongli, Li Ning, Li Guohua, Zhang Enxia

  J. Semicond.  2010, 31(2): 026001
  doi: 10.1088/1674-4926/31/2/026001

• SCIENCE FUND INFORMATION

  Enhancing research skills, focusing on the study of high-performance devices — analysis of the applied projects in 2009 semiconductor discipline of National Natural Science Foundation of China

  He Jie

  J. Semicond.  2010, 31(2): 027001
  doi: 10.1088/1674-4926/31/2/027001

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