First-principles of wurtzite ZnO (0001) and (000ī) surface structures
J. Semicond. 2010, 31(8): 082001
doi: 10.1088/1674-4926/31/8/082001
J. Semicond. 2010, 31(8): 082002
doi: 10.1088/1674-4926/31/8/082002
J. Semicond. 2010, 31(8): 082003
doi: 10.1088/1674-4926/31/8/082003
J. Semicond. 2010, 31(8): 082004
doi: 10.1088/1674-4926/31/8/082004
Planar nucleation and crystallization in the annealing processof ion implanted silicon
J. Semicond. 2010, 31(8): 083001
doi: 10.1088/1674-4926/31/8/083001
Photoconductive properties of lead iodide films prepared by electron beam evaporation
J. Semicond. 2010, 31(8): 083002
doi: 10.1088/1674-4926/31/8/083002
J. Semicond. 2010, 31(8): 083003
doi: 10.1088/1674-4926/31/8/083003
J. Semicond. 2010, 31(8): 083004
doi: 10.1088/1674-4926/31/8/083004
Low-temperature deposition of transparent conducting Mn–W co-doped ZnO thin films
J. Semicond. 2010, 31(8): 083005
doi: 10.1088/1674-4926/31/8/083005
A high-performance enhancement-mode AlGaN/GaN HEMT
J. Semicond. 2010, 31(8): 084001
doi: 10.1088/1674-4926/31/8/084001
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
J. Semicond. 2010, 31(8): 084002
doi: 10.1088/1674-4926/31/8/084002
Diagram representations of charge pumping processes in CMOS transistors
J. Semicond. 2010, 31(8): 084003
doi: 10.1088/1674-4926/31/8/084003
J. Semicond. 2010, 31(8): 084004
doi: 10.1088/1674-4926/31/8/084004
J. Semicond. 2010, 31(8): 084005
doi: 10.1088/1674-4926/31/8/084005
Design and application of a depletion-mode NJFET in a high-voltage BiCMOS process
J. Semicond. 2010, 31(8): 084006
doi: 10.1088/1674-4926/31/8/084006
J. Semicond. 2010, 31(8): 084007
doi: 10.1088/1674-4926/31/8/084007
Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
J. Semicond. 2010, 31(8): 084008
doi: 10.1088/1674-4926/31/8/084008
Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
J. Semicond. 2010, 31(8): 084009
doi: 10.1088/1674-4926/31/8/084009
Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl16
J. Semicond. 2010, 31(8): 084010
doi: 10.1088/1674-4926/31/8/084010
A novel closed-form resistance model for trapezoidal interconnects
J. Semicond. 2010, 31(8): 084011
doi: 10.1088/1674-4926/31/8/084011
A new integrated SOI power device based on self-isolation technology
J. Semicond. 2010, 31(8): 084012
doi: 10.1088/1674-4926/31/8/084012
4 GHz bit-stream adder based on Σ Δ modulation
J. Semicond. 2010, 31(8): 085001
doi: 10.1088/1674-4926/31/8/085001
A low power fast-settling frequency-presetting PLL frequency synthesizer
J. Semicond. 2010, 31(8): 085002
doi: 10.1088/1674-4926/31/8/085002
J. Semicond. 2010, 31(8): 085003
doi: 10.1088/1674-4926/31/8/085003
A low jitter, low spur multiphase phase-locked loop for an IR-UWB receiver
J. Semicond. 2010, 31(8): 085004
doi: 10.1088/1674-4926/31/8/085004
A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process
J. Semicond. 2010, 31(8): 085005
doi: 10.1088/1674-4926/31/8/085005
A full on-chip CMOS low-dropout voltage regulator with VCCS compensation
J. Semicond. 2010, 31(8): 085006
doi: 10.1088/1674-4926/31/8/085006
Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO
J. Semicond. 2010, 31(8): 085007
doi: 10.1088/1674-4926/31/8/085007
A self-adaptive full asynchronous bi-directional transmission channel for network-on-chips
J. Semicond. 2010, 31(8): 085008
doi: 10.1088/1674-4926/31/8/085008
A 0.8 V low power low phase-noise PLL
J. Semicond. 2010, 31(8): 085009
doi: 10.1088/1674-4926/31/8/085009
An efficient dose-compensation method for proximity effect correction
J. Semicond. 2010, 31(8): 086001
doi: 10.1088/1674-4926/31/8/086001