Archive

Volume 31, Issue 8, Aug 2010

• SEMICONDUCTOR PHYSICS

  First-principles of wurtzite ZnO (0001) and (000ī) surface structures

  Zhang Yufei, Guo Zhiyou, Gao Xiaoqi, Cao Dongxing, Dai Yunxiao, Zhao Hongtao

  J. Semicond.  2010, 31(8): 082001
  doi: 10.1088/1674-4926/31/8/082001

  Young's modulus characterization of low-k films of nanoporous Black Diamond^TM by surface acoustic waves

  Shan Xingmeng, Xiao Xia, Liu Yaliang

  J. Semicond.  2010, 31(8): 082002
  doi: 10.1088/1674-4926/31/8/082002

  Theoretical study of the SiO₂/Si interface and its effect on energy band profile and MOSFET gate tunneling current

  Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan, Tang Weihua

  J. Semicond.  2010, 31(8): 082003
  doi: 10.1088/1674-4926/31/8/082003

  Theoretical modeling of the interface recombination effect on the performance of III–V tandem solar cells

  Lin Guijiang, Wu Jyhchiarng, Huang Meichun

  J. Semicond.  2010, 31(8): 082004
  doi: 10.1088/1674-4926/31/8/082004

• SEMICONDUCTOR MATERIALS

  Planar nucleation and crystallization in the annealing processof ion implanted silicon

  Luo Yimin, Chen Zhenhua, Chen Ding

  J. Semicond.  2010, 31(8): 083001
  doi: 10.1088/1674-4926/31/8/083001

  Photoconductive properties of lead iodide films prepared by electron beam evaporation

  Zhu Xinghua, Yang Dingyu, Wei Zhaorong, Sun Hui, Wang Zhiguo, Zu Xiaotao

  J. Semicond.  2010, 31(8): 083002
  doi: 10.1088/1674-4926/31/8/083002

  Effect of bath temperature on the properties of CuIn_xGa_1–x Se₂ thin films grown by the electrodeposition technique

  Cao Jie, Qu Shengchun, Liu Kong, Wang Zhanguo

  J. Semicond.  2010, 31(8): 083003
  doi: 10.1088/1674-4926/31/8/083003

  Growth orientation and superconducting properties of YBa₂Cu₃O_{7 - δ} films prepared by the low-fluorine sol–gel process

  Lei Li, Zhao Gaoyang, Xu Hui, Zhao Juanjuan

  J. Semicond.  2010, 31(8): 083004
  doi: 10.1088/1674-4926/31/8/083004

  Low-temperature deposition of transparent conducting Mn–W co-doped ZnO thin films

  Zhang Huafu, Liu Hanfa, Lei Chengxin, Zhou Aiping, Yuan Changkun

  J. Semicond.  2010, 31(8): 083005
  doi: 10.1088/1674-4926/31/8/083005

• SEMICONDUCTOR DEVICES

  A high-performance enhancement-mode AlGaN/GaN HEMT

  Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, Cai Shujun

  J. Semicond.  2010, 31(8): 084001
  doi: 10.1088/1674-4926/31/8/084001

  Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

  Li Zehong, Ren Min, Zhang Bo, Ma Jun, Hu Tao, Zhang Shuai, Wang Fei, Chen Jian

  J. Semicond.  2010, 31(8): 084002
  doi: 10.1088/1674-4926/31/8/084002

  Diagram representations of charge pumping processes in CMOS transistors

  Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming, Li Mingfu

  J. Semicond.  2010, 31(8): 084003
  doi: 10.1088/1674-4926/31/8/084003

  Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

  Wei Kangliang, Liu Xiaoyan, Du Gang, Han Ruqi

  J. Semicond.  2010, 31(8): 084004
  doi: 10.1088/1674-4926/31/8/084004

  A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I–V characteristics of a barrier-type thyristor

  Li Hairong, Li Siyuan

  J. Semicond.  2010, 31(8): 084005
  doi: 10.1088/1674-4926/31/8/084005

  Design and application of a depletion-mode NJFET in a high-voltage BiCMOS process

  Liu Yong, Tang Zhaohuan, Wang Zhikuan, Yang Yonghui, Yang Weidong, Hu Yonggui

  J. Semicond.  2010, 31(8): 084006
  doi: 10.1088/1674-4926/31/8/084006

  Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al_0.3Ga_0.7N/GaN heterostructures

  Zhao Jianzhi, Lin Zhaojun, Lü Yuanjie, Corrigan Timothy D, Meng Lingguo, Zhang Yu, Wang Zhanguo, Chen Hong

  J. Semicond.  2010, 31(8): 084007
  doi: 10.1088/1674-4926/31/8/084007

  Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

  Li Jin, Liu Hongxia, Li Bin, Cao Lei, Yuan Bo

  J. Semicond.  2010, 31(8): 084008
  doi: 10.1088/1674-4926/31/8/084008

  Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

  Zhang Han, Chen Nuofu, Wang Yu, Yin Zhigang, Zhang Xingwang, Shi Huiwei, Wang Yanshuo, Huang Tianmao

  J. Semicond.  2010, 31(8): 084009
  doi: 10.1088/1674-4926/31/8/084009

  Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl₁₆

  Lei Tingping, Shi Yunbo, Lü Wenlong, Liu Yang, Tao Wei, Yuan Pengliang, Lin Liwei, Sun Daoheng, Wang Liquan

  J. Semicond.  2010, 31(8): 084010
  doi: 10.1088/1674-4926/31/8/084010

  A novel closed-form resistance model for trapezoidal interconnects

  Chen Baojun, Tang Zhen'an, Yu Tiejun

  J. Semicond.  2010, 31(8): 084011
  doi: 10.1088/1674-4926/31/8/084011

  A new integrated SOI power device based on self-isolation technology

  Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei

  J. Semicond.  2010, 31(8): 084012
  doi: 10.1088/1674-4926/31/8/084012

• SEMICONDUCTOR INTEGRATED CIRCUITS

  4 GHz bit-stream adder based on Σ Δ modulation

  Liang Yong, Wang Zhigong, Meng Qiao, Guo Xiaodan

  J. Semicond.  2010, 31(8): 085001
  doi: 10.1088/1674-4926/31/8/085001

  A low power fast-settling frequency-presetting PLL frequency synthesizer

  Geng Zhiqing, Yan Xiaozhou, Lou Wenfeng, Feng Peng, Wu Nanjian

  J. Semicond.  2010, 31(8): 085002
  doi: 10.1088/1674-4926/31/8/085002

  DCM, FSM, dead time and width controllers for a high frequency high efficiency buck DC–DC converter over a wide load range

  Pi Changming, Yan Wei, Zhang Ke, Li Wenhong

  J. Semicond.  2010, 31(8): 085003
  doi: 10.1088/1674-4926/31/8/085003

  A low jitter, low spur multiphase phase-locked loop for an IR-UWB receiver

  Shao Ke, Chen Hu, Pan Yaohua, Hong Zhiliang

  J. Semicond.  2010, 31(8): 085004
  doi: 10.1088/1674-4926/31/8/085004

  A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process

  Wang Jingchao, Zhang Chun, Wang Zhihua

  J. Semicond.  2010, 31(8): 085005
  doi: 10.1088/1674-4926/31/8/085005

  A full on-chip CMOS low-dropout voltage regulator with VCCS compensation

  Gao Leisheng, Zhou Yumei, Wu Bin, Jiang Jianhua

  J. Semicond.  2010, 31(8): 085006
  doi: 10.1088/1674-4926/31/8/085006

  Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO

  Wu Xiushan, Wang Zhigong, Li Zhiqun, Xia Jun, Li Qing

  J. Semicond.  2010, 31(8): 085007
  doi: 10.1088/1674-4926/31/8/085007

  A self-adaptive full asynchronous bi-directional transmission channel for network-on-chips

  Guan Xuguang, Yang Yintang, Zhu Zhangming, Zhou Duan

  J. Semicond.  2010, 31(8): 085008
  doi: 10.1088/1674-4926/31/8/085008

  A 0.8 V low power low phase-noise PLL

  Han Yan, Liang Xiao, Zhou Haifeng, Xie Yinfang, Wong Waisum

  J. Semicond.  2010, 31(8): 085009
  doi: 10.1088/1674-4926/31/8/085009

• SEMICONDUCTOR TECHNOLOGY

  An efficient dose-compensation method for proximity effect correction

  Wang Ying, Han Weihua, Yang Xiang, Zhang Renping, Zhang Yang, Yang Fuhua

  J. Semicond.  2010, 31(8): 086001
  doi: 10.1088/1674-4926/31/8/086001

Journal of Semiconductors © 2017 All Rights Reserved