Archive

Volume 32, Issue 1, Jan 2011

• SEMICONDUCTOR PHYSICS

  Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

  Mark N. Lockrey, Matthew R. Phillips

  J. Semicond.  2011, 32(1): 012001
  doi: 10.1088/1674-4926/32/1/012001

  Effect of temperature and moisture on the luminescence properties of silicone filled with YAG phosphor

  Zhang Qin, Jiao Feng, Chen Zhaohui, Xu Ling, Wang Simin, Liu Sheng

  J. Semicond.  2011, 32(1): 012002
  doi: 10.1088/1674-4926/32/1/012002

  Effect of strontium nitride on the properties of Sr₂Si₅N₈:Eu²⁺ red phosphor

  Teng Xiaoming, Liang Chao, He Jinhua

  J. Semicond.  2011, 32(1): 012003
  doi: 10.1088/1674-4926/32/1/012003

• SEMICONDUCTOR MATERIALS

  Physical properties of hematite α-Fe₂O₃ thin films: application to photoelectrochemical solar cells

  S. S. Shinde, R. A. Bansode, C. H. Bhosale, K. Y. Rajpure

  J. Semicond.  2011, 32(1): 013001
  doi: 10.1088/1674-4926/32/1/013001

  Photoelectric properties of ITO thin films deposited by DC magnetron sputtering

  Liu Wei, Cheng Shuying

  J. Semicond.  2011, 32(1): 013002
  doi: 10.1088/1674-4926/32/1/013002

  Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth

  Koh Matsumoto, Kazutada Ikenaga, Jun Yamamoto, Kazuki Naito, Yoshiki Yano, Akinori Ubukata, Hiroki Tokunaga, Tadanobu Arimura, Katsuaki Cho, Toshiya Tabuchi, Akira Yamaguchi, Yasuhiro Harada, Yuzaburo Ban, Kousuke Uchiyama

  J. Semicond.  2011, 32(1): 013003
  doi: 10.1088/1674-4926/32/1/013003

  Fluorescent SiC and its application to white light-emitting diodes

  Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syvajarvi, Rositza Yakimova

  J. Semicond.  2011, 32(1): 013004
  doi: 10.1088/1674-4926/32/1/013004

• SEMICONDUCTOR DEVICES

  Avalanche behavior of power MOSFETs under different temperature conditions

  Lu Jiang, Wang Lixin, Lu Shuojin, Wang Xuesheng, Han Zhengsheng

  J. Semicond.  2011, 32(1): 014001
  doi: 10.1088/1674-4926/32/1/014001

  A total dose radiation model for deep submicron PDSOI NMOS

  Bu Jianhui, Bi Jinshun, Liu Mengxin, Han Zhengsheng

  J. Semicond.  2011, 32(1): 014002
  doi: 10.1088/1674-4926/32/1/014002

  Complementary charge islands structure for a high voltage device of partial-SOI

  Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji

  J. Semicond.  2011, 32(1): 014003
  doi: 10.1088/1674-4926/32/1/014003

  Degradation of light emitting diodes: a proposed methodology

  Sau Koh, Willem Van Driel, G. Q. Zhang

  J. Semicond.  2011, 32(1): 014004
  doi: 10.1088/1674-4926/32/1/014004

  Spacing optimization of high power LED arrays for solid state lighting

  Y. Sing Chan, S. W. Ricky Lee

  J. Semicond.  2011, 32(1): 014005
  doi: 10.1088/1674-4926/32/1/014005

  Thermal analysis of LED lighting system with different fin heat sinks

  Hou Fengze, Yang Daoguo, Zhang Guoqi

  J. Semicond.  2011, 32(1): 014006
  doi: 10.1088/1674-4926/32/1/014006

  Reliability test and failure analysis of high power LED packages

  Chen Zhaohui, Zhang Qin, Wang Kai, Luo Xiaobing, Liu Sheng

  J. Semicond.  2011, 32(1): 014007
  doi: 10.1088/1674-4926/32/1/014007

  A review of passive thermal management of LED module

  Ye Huaiyu, Sau Koh, Henk van Zeijl, A. W. J. Gielen, Zhang Guoqi

  J. Semicond.  2011, 32(1): 014008
  doi: 10.1088/1674-4926/32/1/014008

  Thermal design for the high-power LED lamp

  Tian Xiaogai, Chen Wei, Zhang Jiyong

  J. Semicond.  2011, 32(1): 014009
  doi: 10.1088/1674-4926/32/1/014009

  ICP dry etching ITO to improve the performance of GaN-based LEDs

  Meng Lili, Chen Yixin, Ma Li, Liu Zike, Shen Guangdi

  J. Semicond.  2011, 32(1): 014010
  doi: 10.1088/1674-4926/32/1/014010

  Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor

  Lu Pengzhi, Yang Hua, Wang Guohong

  J. Semicond.  2011, 32(1): 014011
  doi: 10.1088/1674-4926/32/1/014011

  Absorption of photons in the thin film AlGaInP light emitting diode

  Gao Wei, Guo Weiling, Zou Deshu, Jiang Wenjing, Liu Zike, Shen Guangdi

  J. Semicond.  2011, 32(1): 014012
  doi: 10.1088/1674-4926/32/1/014012

  Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

  Wang Lai, Hao Zhibiao, Han Yanjun, Luo Yi, Wang Lanxi, Chen Xuekang

  J. Semicond.  2011, 32(1): 014013
  doi: 10.1088/1674-4926/32/1/014013

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 455 nW 220 fJ/conversion-step 12 bits 2 kS/s SAR ADC for portable biopotential acquisition systems

  Zhang Hui, Qin Yajie, Yang Siyu, Hong Zhiliang

  J. Semicond.  2011, 32(1): 015001
  doi: 10.1088/1674-4926/32/1/015001

  A 12-bit 40-MS/s SHA-less pipelined ADC using a front-end RC matching technique

  Fan Mingjun, Ren Junyan, Shu Guanghua, Guo Yao, Li Ning, Ye Fan, Xu Jun

  J. Semicond.  2011, 32(1): 015002
  doi: 10.1088/1674-4926/32/1/015002

  A low power 12-bit 30 MSPS CMOS pipeline ADC with on-chip voltage reference buffer

  Chen Qihui, Qin Yajie, Lu Bo, Hong Zhiliang

  J. Semicond.  2011, 32(1): 015003
  doi: 10.1088/1674-4926/32/1/015003

  A continuous-time/discrete-time mixed audio-band sigma delta ADC

  Liu Yan, Hua Siliang, Wang Donghui, Hou Chaohuan

  J. Semicond.  2011, 32(1): 015004
  doi: 10.1088/1674-4926/32/1/015004

  Surface-type humidity sensor based on cellulose-PEPC for telemetry systems

  Kh. S. Karimov, M. Saleem, T. A. Qasuria, M. Farooq

  J. Semicond.  2011, 32(1): 015005
  doi: 10.1088/1674-4926/32/1/015005

  A digital calibration technique for an ultra high-speed wide-bandwidth folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology

  Yu Jinshan, Zhang Ruitao, Zhang Zhengping, Wang Yonglu, Zhu Can, Zhang Lei, Yu Zhou, Han Yong

  J. Semicond.  2011, 32(1): 015006
  doi: 10.1088/1674-4926/32/1/015006

• SEMICONDUCTOR TECHNOLOGY

  A multivariate process capability index model system

  Wang Shaoxi, Wang Danghui

  J. Semicond.  2011, 32(1): 016001
  doi: 10.1088/1674-4926/32/1/016001

• SCIENCE FUND INFORMATION

  During the transformation period for foundation, take the opportunity to restructure—analysis of the applied projects in 2010 semiconductor discipline of National Natural Science Foundation of China

  He Jie, Guo Ruiqian, Pan Qing

  J. Semicond.  2011, 32(1): 017001
  doi: 10.1088/1674-4926/32/1/017001

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