J. Semicond. 2011, 32(1): 012001
doi: 10.1088/1674-4926/32/1/012001
J. Semicond. 2011, 32(1): 012002
doi: 10.1088/1674-4926/32/1/012002
Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor
J. Semicond. 2011, 32(1): 012003
doi: 10.1088/1674-4926/32/1/012003
Physical properties of hematite α-Fe2O3 thin films: application to photoelectrochemical solar cells
J. Semicond. 2011, 32(1): 013001
doi: 10.1088/1674-4926/32/1/013001
Photoelectric properties of ITO thin films deposited by DC magnetron sputtering
J. Semicond. 2011, 32(1): 013002
doi: 10.1088/1674-4926/32/1/013002
Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth
J. Semicond. 2011, 32(1): 013003
doi: 10.1088/1674-4926/32/1/013003
Fluorescent SiC and its application to white light-emitting diodes
J. Semicond. 2011, 32(1): 013004
doi: 10.1088/1674-4926/32/1/013004
Avalanche behavior of power MOSFETs under different temperature conditions
J. Semicond. 2011, 32(1): 014001
doi: 10.1088/1674-4926/32/1/014001
A total dose radiation model for deep submicron PDSOI NMOS
J. Semicond. 2011, 32(1): 014002
doi: 10.1088/1674-4926/32/1/014002
Complementary charge islands structure for a high voltage device of partial-SOI
J. Semicond. 2011, 32(1): 014003
doi: 10.1088/1674-4926/32/1/014003
Degradation of light emitting diodes: a proposed methodology
J. Semicond. 2011, 32(1): 014004
doi: 10.1088/1674-4926/32/1/014004
Spacing optimization of high power LED arrays for solid state lighting
J. Semicond. 2011, 32(1): 014005
doi: 10.1088/1674-4926/32/1/014005
Thermal analysis of LED lighting system with different fin heat sinks
J. Semicond. 2011, 32(1): 014006
doi: 10.1088/1674-4926/32/1/014006
Reliability test and failure analysis of high power LED packages
J. Semicond. 2011, 32(1): 014007
doi: 10.1088/1674-4926/32/1/014007
A review of passive thermal management of LED module
J. Semicond. 2011, 32(1): 014008
doi: 10.1088/1674-4926/32/1/014008
Thermal design for the high-power LED lamp
J. Semicond. 2011, 32(1): 014009
doi: 10.1088/1674-4926/32/1/014009
ICP dry etching ITO to improve the performance of GaN-based LEDs
J. Semicond. 2011, 32(1): 014010
doi: 10.1088/1674-4926/32/1/014010
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor
J. Semicond. 2011, 32(1): 014011
doi: 10.1088/1674-4926/32/1/014011
Absorption of photons in the thin film AlGaInP light emitting diode
J. Semicond. 2011, 32(1): 014012
doi: 10.1088/1674-4926/32/1/014012
A 455 nW 220 fJ/conversion-step 12 bits 2 kS/s SAR ADC for portable biopotential acquisition systems
J. Semicond. 2011, 32(1): 015001
doi: 10.1088/1674-4926/32/1/015001
A 12-bit 40-MS/s SHA-less pipelined ADC using a front-end RC matching technique
J. Semicond. 2011, 32(1): 015002
doi: 10.1088/1674-4926/32/1/015002
A low power 12-bit 30 MSPS CMOS pipeline ADC with on-chip voltage reference buffer
J. Semicond. 2011, 32(1): 015003
doi: 10.1088/1674-4926/32/1/015003
A continuous-time/discrete-time mixed audio-band sigma delta ADC
J. Semicond. 2011, 32(1): 015004
doi: 10.1088/1674-4926/32/1/015004
Surface-type humidity sensor based on cellulose-PEPC for telemetry systems
J. Semicond. 2011, 32(1): 015005
doi: 10.1088/1674-4926/32/1/015005
A multivariate process capability index model system
J. Semicond. 2011, 32(1): 016001
doi: 10.1088/1674-4926/32/1/016001