J. Semicond. 2011, 32(12): 121001
doi: 10.1088/1674-4926/32/12/121001
MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities
J. Semicond. 2011, 32(12): 121002
doi: 10.1088/1674-4926/32/12/121002
A kind of magnetron cavity used in rubidium atomic frequency standards
J. Semicond. 2011, 32(12): 122001
doi: 10.1088/1674-4926/32/12/122001
J. Semicond. 2011, 32(12): 122002
doi: 10.1088/1674-4926/32/12/122002
Peltier effect in doped silicon microchannel plates
J. Semicond. 2011, 32(12): 122003
doi: 10.1088/1674-4926/32/12/122003
Influence of morphologies on the field emission performance of oriented ZnO nano-arrays
J. Semicond. 2011, 32(12): 123001
doi: 10.1088/1674-4926/32/12/123001
J. Semicond. 2011, 32(12): 123002
doi: 10.1088/1674-4926/32/12/123002
J. Semicond. 2011, 32(12): 124001
doi: 10.1088/1674-4926/32/12/124001
Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing
J. Semicond. 2011, 32(12): 124002
doi: 10.1088/1674-4926/32/12/124002
A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
J. Semicond. 2011, 32(12): 124003
doi: 10.1088/1674-4926/32/12/124003
J. Semicond. 2011, 32(12): 124004
doi: 10.1088/1674-4926/32/12/124004
A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model
J. Semicond. 2011, 32(12): 124005
doi: 10.1088/1674-4926/32/12/124005
Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
J. Semicond. 2011, 32(12): 124006
doi: 10.1088/1674-4926/32/12/124006
A novel 2-T structure memory device using a Si nanodot for embedded application
J. Semicond. 2011, 32(12): 124007
doi: 10.1088/1674-4926/32/12/124007
Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
J. Semicond. 2011, 32(12): 124008
doi: 10.1088/1674-4926/32/12/124008
A dual-mode analog baseband with digital-assisted DC-offset calibration for WCDMA/GSM receivers
J. Semicond. 2011, 32(12): 125001
doi: 10.1088/1674-4926/32/12/125001
A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13 μm CMOS technology
J. Semicond. 2011, 32(12): 125002
doi: 10.1088/1674-4926/32/12/125002
A new low-voltage and high-speed sense amplifier for flash memory
J. Semicond. 2011, 32(12): 125003
doi: 10.1088/1674-4926/32/12/125003
A novel power amplifier structure for RFID tag applications
J. Semicond. 2011, 32(12): 125004
doi: 10.1088/1674-4926/32/12/125004
Harmonic-suppressed quadrature-input frequency divider for OFDM systems
J. Semicond. 2011, 32(12): 125005
doi: 10.1088/1674-4926/32/12/125005
A 5 GHz 7.2 dB NF low power direct conversion receiver front-end with balun LNA
J. Semicond. 2011, 32(12): 125006
doi: 10.1088/1674-4926/32/12/125006
Continuous time sigma delta ADC design and non-idealities analysis
J. Semicond. 2011, 32(12): 125007
doi: 10.1088/1674-4926/32/12/125007
A low power mixed signal DC offset calibration circuit for direct conversion receiver applications
J. Semicond. 2011, 32(12): 125008
doi: 10.1088/1674-4926/32/12/125008
A 750 MHz semi-digital clock and data recovery circuit with 10-12
J. Semicond. 2011, 32(12): 125009
doi: 10.1088/1674-4926/32/12/125009
12.5 Gbps 1 : 16 DEMUX IC with high speed synchronizing circuits
J. Semicond. 2011, 32(12): 125010
doi: 10.1088/1674-4926/32/12/125010
J. Semicond. 2011, 32(12): 126001
doi: 10.1088/1674-4926/32/12/126001
Wafer back pressure control and optimization in the CMP process
J. Semicond. 2011, 32(12): 126002
doi: 10.1088/1674-4926/32/12/126002