Archive

Volume 32, Issue 12, Dec 2011

• INVITED PAPERS

  MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

  Jie Binbin, Sah Chihtang

  J. Semicond.  2011, 32(12): 121001
  doi: 10.1088/1674-4926/32/12/121001

  MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

  Jie Binbin, Sah Chihtang

  J. Semicond.  2011, 32(12): 121002
  doi: 10.1088/1674-4926/32/12/121002

• SEMICONDUCTOR PHYSICS

  A kind of magnetron cavity used in rubidium atomic frequency standards

  Yang Shiyu, Cui Jingzhong, Tu Jianhui, Liang Yaoting

  J. Semicond.  2011, 32(12): 122001
  doi: 10.1088/1674-4926/32/12/122001

  Neurocomputing van der Pauw function for the measurement of a semiconductor's resistivity without use of the learning rate of weight vector regulation

  Li Hongli, Sun Yicai, Wang Wei, Harry Hutchinson

  J. Semicond.  2011, 32(12): 122002
  doi: 10.1088/1674-4926/32/12/122002

  Peltier effect in doped silicon microchannel plates

  Ci Pengliang, Shi Jing, Wang Fei, Xu Shaohui, Yang Zhenya, Yang Pingxiong, Wang Lianwei, Gao Chen, Paul K. Chu

  J. Semicond.  2011, 32(12): 122003
  doi: 10.1088/1674-4926/32/12/122003

• SEMICONDUCTOR MATERIALS

  Influence of morphologies on the field emission performance of oriented ZnO nano-arrays

  Wang Lingjie, Yang Zunxian, Lin Jinyang, Guo Tailiang

  J. Semicond.  2011, 32(12): 123001
  doi: 10.1088/1674-4926/32/12/123001

  Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength

  Duan Chunyan, Liu Chao, Ai Bin, Lai Jianjun, Deng Youjun, Shen Hui

  J. Semicond.  2011, 32(12): 123002
  doi: 10.1088/1674-4926/32/12/123002

  In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

  Gong Yibin, Dai Pengfei, Gao Anran, Li Tie, Zhou Ping, Wang Yuelin

  J. Semicond.  2011, 32(12): 123003
  doi: 10.1088/1674-4926/32/12/123003

• SEMICONDUCTOR DEVICES

  Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator

  A. Resfa, Bourzig Y Smahi, Brahimi R Menezla

  J. Semicond.  2011, 32(12): 124001
  doi: 10.1088/1674-4926/32/12/124001

  Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing

  Liu Jun, Sun Lingling, Marissa Condon

  J. Semicond.  2011, 32(12): 124002
  doi: 10.1088/1674-4926/32/12/124002

  A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

  Liu Bo, Feng Zhihong, Zhang Sen, Dun Shaobo, Yin Jiayun, Li Jia, Wang Jingjing, Zhang Xiaowei, Fang Yulong, Cai Shujun

  J. Semicond.  2011, 32(12): 124003
  doi: 10.1088/1674-4926/32/12/124003

  Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

  Jiang Huaping, Chen Wanjun, Liu Chuang, Rao Zugang, Dong Bin, Zhang Bo

  J. Semicond.  2011, 32(12): 124004
  doi: 10.1088/1674-4926/32/12/124004

  A novel high-voltage device structure with an N⁺ ring in substrate and the breakdown voltage model

  Li Qi, Zhu Jinluan, Wang Weidong, Yue Hongwei, Jin Liangnian

  J. Semicond.  2011, 32(12): 124005
  doi: 10.1088/1674-4926/32/12/124005

  Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

  Ma Xiangrong, Shi Wei, Ji Weili, Xue Hong

  J. Semicond.  2011, 32(12): 124006
  doi: 10.1088/1674-4926/32/12/124006

  A novel 2-T structure memory device using a Si nanodot for embedded application

  Yang Xiaonan, Wang Yong, Zhang Manhong, Huo Zongliang, Liu Jing, Zhang Bo, Liu Ming

  J. Semicond.  2011, 32(12): 124007
  doi: 10.1088/1674-4926/32/12/124007

  Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants

  Li Weiping, Xu Jiangtao?, Xu Chao, Li Binqiao, Yao Suying

  J. Semicond.  2011, 32(12): 124008
  doi: 10.1088/1674-4926/32/12/124008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A dual-mode analog baseband with digital-assisted DC-offset calibration for WCDMA/GSM receivers

  Xie Renzhong, Jiang Chen, Li Weinan, Huang Yumei, Hong Zhiliang

  J. Semicond.  2011, 32(12): 125001
  doi: 10.1088/1674-4926/32/12/125001

  A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13 μm CMOS technology

  Peng Miao, Lin Min, Shi Yin, Fa Foster Dai

  J. Semicond.  2011, 32(12): 125002
  doi: 10.1088/1674-4926/32/12/125002

  A new low-voltage and high-speed sense amplifier for flash memory

  Guo Jiarong, Ran Feng

  J. Semicond.  2011, 32(12): 125003
  doi: 10.1088/1674-4926/32/12/125003

  A novel power amplifier structure for RFID tag applications

  Deng Jianbao, Zhang Shilin, Li De, Zhang Yanzheng, Mao Luhong, Xie Sheng

  J. Semicond.  2011, 32(12): 125004
  doi: 10.1088/1674-4926/32/12/125004

  Harmonic-suppressed quadrature-input frequency divider for OFDM systems

  Fu Haipeng, Ren Junyan, Li Wei, Li Ning

  J. Semicond.  2011, 32(12): 125005
  doi: 10.1088/1674-4926/32/12/125005

  A 5 GHz 7.2 dB NF low power direct conversion receiver front-end with balun LNA

  Hao Shilei, Mei Niansong, Huang Yumei, Hong Zhiliang

  J. Semicond.  2011, 32(12): 125006
  doi: 10.1088/1674-4926/32/12/125006

  Continuous time sigma delta ADC design and non-idealities analysis

  Yuan Jun, Zhang Zhaofeng, Wu Jun, Wang Chao, Chen Zhenhai, Qian Wenrong, Yang Yintang

  J. Semicond.  2011, 32(12): 125007
  doi: 10.1088/1674-4926/32/12/125007

  A low power mixed signal DC offset calibration circuit for direct conversion receiver applications

  Yang Lijun, Yuan Fang, Gong Zheng, Shi Yin, Chen Zhiming

  J. Semicond.  2011, 32(12): 125008
  doi: 10.1088/1674-4926/32/12/125008

  A 750 MHz semi-digital clock and data recovery circuit with 10^-12

  Wei Xueming, Wang Yiweng, Li Ping, Luo Heping

  J. Semicond.  2011, 32(12): 125009
  doi: 10.1088/1674-4926/32/12/125009

  12.5 Gbps 1 : 16 DEMUX IC with high speed synchronizing circuits

  Zhou Lei, Wu Danyu, Chen Jianwu, Jin Zhi, Liu Xinyu

  J. Semicond.  2011, 32(12): 125010
  doi: 10.1088/1674-4926/32/12/125010

• SEMICONDUCTOR TECHNOLOGY

  Improvement of the field emission properties of carbon nanotubes by CNT/Fe₃O₄ composite electrophoretic deposition

  Zheng Longwu, Hu Liqin, Yang Fan, Guo Tailiang

  J. Semicond.  2011, 32(12): 126001
  doi: 10.1088/1674-4926/32/12/126001

  Wafer back pressure control and optimization in the CMP process

  Men Yanwu, Zhang Hui, Zhou Kai, Ye Peiqing

  J. Semicond.  2011, 32(12): 126002
  doi: 10.1088/1674-4926/32/12/126002

Journal of Semiconductors © 2017 All Rights Reserved