Journal of Semiconductors

Archive

Volume 32, Issue 3, Mar 2011

SEMICONDUCTOR PHYSICS

Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD

Zuo Zewen, Guan Wentian, Xin Yu, Lü Jin, Wang Junzhuan, Pu Lin, Shi Yi, Zheng Youdou

J. Semicond. 2011, 32(3): 032001
doi: 10.1088/1674-4926/32/3/032001

A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer

Zhang Caizhen, Wang Yongshun, Wang Zaixing

J. Semicond. 2011, 32(3): 032002
doi: 10.1088/1674-4926/32/3/032002
SEMICONDUCTOR MATERIALS

Physical properties of spray deposited CdTe thin films: PEC performance

V. M. Nikale, S. S. Shinde, C. H. Bhosale, K.Y. Rajpure

J. Semicond. 2011, 32(3): 033001
doi: 10.1088/1674-4926/32/3/033001

High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, Xiao Hongling, Li Jing, Li Jinmin

J. Semicond. 2011, 32(3): 033002
doi: 10.1088/1674-4926/32/3/033002

Removal of impurities from metallurgical grade silicon by electron beam melting

Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju

J. Semicond. 2011, 32(3): 033003
doi: 10.1088/1674-4926/32/3/033003

Dark conductivity and photoconductivity of amorphous Hg_0.78Cd_0.22Te thin films

Qiu Feng, Xiang Jinzhong, Kong Jincheng, Yu Lianjie, Kong Lingde, Wang Guanghua, Li Xiongjun, Yang Lili, Li Cong, Ji Rongbin

J. Semicond. 2011, 32(3): 033004
doi: 10.1088/1674-4926/32/3/033004

Evolution of ZnO architecture on a nanoporous TiO₂ film by a hydrothermal method and the photoelectrochemical performance

Jiang Yinhua, Wu Xiaoli, Zhang Wenli, Ni Liang, Sun Yueming

J. Semicond. 2011, 32(3): 033005
doi: 10.1088/1674-4926/32/3/033005

Mass transport analysis of a showerhead MOCVD reactor

Li Hui

J. Semicond. 2011, 32(3): 033006
doi: 10.1088/1674-4926/32/3/033006
SEMICONDUCTOR DEVICES

Numerical analysis of the self-heating effect in SGOI with a double step buried oxide

Li Bin, Liu Hongxia, Li Jin, Yuan Bo, Cao Lei

J. Semicond. 2011, 32(3): 034001
doi: 10.1088/1674-4926/32/3/034001

A millimeter wave large-signal model of GaAs planar Schottky varactor diodes

Dong Junrong, Huang Jie, Tian Chao, Yang Hao, Zhang Haiying

J. Semicond. 2011, 32(3): 034002
doi: 10.1088/1674-4926/32/3/034002

Organic thin film transistors with a SiO₂/SiN_x/SiO₂ composite insulator layer

Liu Xiang, Liu Hui

J. Semicond. 2011, 32(3): 034003
doi: 10.1088/1674-4926/32/3/034003

Effects of contact electrode size on the characteristics of polycrystalline-Si p–i–n solar cells

M. H. Juang, H. Y. Huang, S. L. Jang

J. Semicond. 2011, 32(3): 034004
doi: 10.1088/1674-4926/32/3/034004

GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation

Chen Yiren, Song Hang, Li Dabing, Sun Xiaojuan, Li Zhiming, Jiang Hong, Miao Guoqing

J. Semicond. 2011, 32(3): 034005
doi: 10.1088/1674-4926/32/3/034005

Novel capacitance-type humidity sensor based on multi-wall carbon nanotube/SiO₂ composite films

Liu Xiaowei, Zhao Zhengang, Li Tuo, Wang Xin

J. Semicond. 2011, 32(3): 034006
doi: 10.1088/1674-4926/32/3/034006

The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

Wang Yiyuan, Lu Wu, Ren Diyuan, Guo Qi, Yu Xuefeng, Gao Bo

J. Semicond. 2011, 32(3): 034007
doi: 10.1088/1674-4926/32/3/034007

Design of a photonic crystal microcavity for biosensing

Li Junhua, Kan Qiang, Wang Chunxia, Su Baoqing, Xie Yiyang, Chen Hongda

J. Semicond. 2011, 32(3): 034008
doi: 10.1088/1674-4926/32/3/034008
SEMICONDUCTOR INTEGRATED CIRCUITS

A robust and simple two-mode digital calibration technique for pipelined ADC

Yin Xiumei, Zhao Nan, Sekedi Bomeh Kobenge, Yang Huazhong

J. Semicond. 2011, 32(3): 035001
doi: 10.1088/1674-4926/32/3/035001

A low power 12-bit 200-kS/s SAR ADC with a differential time domain comparator

Yang Siyu, Zhang Hui, Fu Wenhui, Yi Ting, Hong Zhiliang

J. Semicond. 2011, 32(3): 035002
doi: 10.1088/1674-4926/32/3/035002

A 2.5-V 56-mW baseband chain in a multistandard TV tuner for mobile and multimedia applications

Yang Zhou, Wen Guangjun, Feng Xiao

J. Semicond. 2011, 32(3): 035003
doi: 10.1088/1674-4926/32/3/035003

A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

Mei Niansong, Sun Yu, Lu Bo, Pan Yaohua, Huang Yumei, Hong Zhiliang

J. Semicond. 2011, 32(3): 035004
doi: 10.1088/1674-4926/32/3/035004

A speaker driver for a single phase supply class G & I

Feng Yong, Yang Shanshan, Peng Zhenfei, Hong Zhiliang, Liu Yang

J. Semicond. 2011, 32(3): 035005
doi: 10.1088/1674-4926/32/3/035005

A resistorless CMOS current reference with temperature compensation

Yan Wei, Tian Xin, Li Wenhong, Liu Ran

J. Semicond. 2011, 32(3): 035006
doi: 10.1088/1674-4926/32/3/035006

Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend

Li Bing, Zhuang Yiqi, Long Qiang, Jin Zhao, Li Zhenrong, Jin Gang

J. Semicond. 2011, 32(3): 035007
doi: 10.1088/1674-4926/32/3/035007

An InGaAs/InP 40 GHz CML static frequency divider

Su Yongbo, Jin Zhi, Cheng Wei, Ge Ji, Wang Xiantai, Chen Gaopeng, Liu Xinyu, Xu Anhuai, Qi Ming

J. Semicond. 2011, 32(3): 035008
doi: 10.1088/1674-4926/32/3/035008

An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

Li Chengzhan, Chen Zhijian, Huang Jiwei, Wang Yongping, Ma Chuanhui, Yang Hanbing, Liao Yinghao, Zhou Yong, Liu Bin

J. Semicond. 2011, 32(3): 035009
doi: 10.1088/1674-4926/32/3/035009
SEMICONDUCTOR TECHNOLOGY

MOS structure fabrication by thermal oxidation of multilayer metal thin films

Mohammad Orvatinia, Atefeh Chahkoutahi

J. Semicond. 2011, 32(3): 036001
doi: 10.1088/1674-4926/32/3/036001

Model analysis and experimental investigation of the friction torque during the CMP process

Guo Dongming, Xu Chi, Kang Renke, Jin Zhuji

J. Semicond. 2011, 32(3): 036002
doi: 10.1088/1674-4926/32/3/036002