Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD
J. Semicond. 2011, 32(3): 032001
doi: 10.1088/1674-4926/32/3/032001
J. Semicond. 2011, 32(3): 032002
doi: 10.1088/1674-4926/32/3/032002
Physical properties of spray deposited CdTe thin films: PEC performance
J. Semicond. 2011, 32(3): 033001
doi: 10.1088/1674-4926/32/3/033001
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
J. Semicond. 2011, 32(3): 033002
doi: 10.1088/1674-4926/32/3/033002
Removal of impurities from metallurgical grade silicon by electron beam melting
J. Semicond. 2011, 32(3): 033003
doi: 10.1088/1674-4926/32/3/033003
Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films
J. Semicond. 2011, 32(3): 033004
doi: 10.1088/1674-4926/32/3/033004
J. Semicond. 2011, 32(3): 033005
doi: 10.1088/1674-4926/32/3/033005
Mass transport analysis of a showerhead MOCVD reactor
J. Semicond. 2011, 32(3): 033006
doi: 10.1088/1674-4926/32/3/033006
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
J. Semicond. 2011, 32(3): 034001
doi: 10.1088/1674-4926/32/3/034001
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
J. Semicond. 2011, 32(3): 034002
doi: 10.1088/1674-4926/32/3/034002
Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer
J. Semicond. 2011, 32(3): 034003
doi: 10.1088/1674-4926/32/3/034003
Effects of contact electrode size on the characteristics of polycrystalline-Si p–i–n solar cells
J. Semicond. 2011, 32(3): 034004
doi: 10.1088/1674-4926/32/3/034004
GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation
J. Semicond. 2011, 32(3): 034005
doi: 10.1088/1674-4926/32/3/034005
Novel capacitance-type humidity sensor based on multi-wall carbon nanotube/SiO2 composite films
J. Semicond. 2011, 32(3): 034006
doi: 10.1088/1674-4926/32/3/034006
The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
J. Semicond. 2011, 32(3): 034007
doi: 10.1088/1674-4926/32/3/034007
Design of a photonic crystal microcavity for biosensing
J. Semicond. 2011, 32(3): 034008
doi: 10.1088/1674-4926/32/3/034008
A robust and simple two-mode digital calibration technique for pipelined ADC
J. Semicond. 2011, 32(3): 035001
doi: 10.1088/1674-4926/32/3/035001
A low power 12-bit 200-kS/s SAR ADC with a differential time domain comparator
J. Semicond. 2011, 32(3): 035002
doi: 10.1088/1674-4926/32/3/035002
A 2.5-V 56-mW baseband chain in a multistandard TV tuner for mobile and multimedia applications
J. Semicond. 2011, 32(3): 035003
doi: 10.1088/1674-4926/32/3/035003
A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology
J. Semicond. 2011, 32(3): 035004
doi: 10.1088/1674-4926/32/3/035004
A speaker driver for a single phase supply class G & I
J. Semicond. 2011, 32(3): 035005
doi: 10.1088/1674-4926/32/3/035005
A resistorless CMOS current reference with temperature compensation
J. Semicond. 2011, 32(3): 035006
doi: 10.1088/1674-4926/32/3/035006
Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend
J. Semicond. 2011, 32(3): 035007
doi: 10.1088/1674-4926/32/3/035007
An InGaAs/InP 40 GHz CML static frequency divider
J. Semicond. 2011, 32(3): 035008
doi: 10.1088/1674-4926/32/3/035008
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
J. Semicond. 2011, 32(3): 035009
doi: 10.1088/1674-4926/32/3/035009
MOS structure fabrication by thermal oxidation of multilayer metal thin films
J. Semicond. 2011, 32(3): 036001
doi: 10.1088/1674-4926/32/3/036001
Model analysis and experimental investigation of the friction torque during the CMP process
J. Semicond. 2011, 32(3): 036002
doi: 10.1088/1674-4926/32/3/036002