Archive

Volume 32, Issue 5, May 2011

• SEMICONDUCTOR PHYSICS

  First-principles study on transport properties of zigzag graphene nanoribbon with different spin-configurations

  An Liping, Liu Nianhua

  J. Semicond.  2011, 32(5): 052001
  doi: 10.1088/1674-4926/32/5/052001

  Annealing optimization of hydrogenated amorphous silicon suboxide film for solar cell application

  Jia Guangzhi, Liu Honggang, Chang Hudong

  J. Semicond.  2011, 32(5): 052002
  doi: 10.1088/1674-4926/32/5/052002

• SEMICONDUCTOR MATERIALS

  Physical properties of sprayed antimony doped tin oxide thin films: Role of thickness

  A. R. Babar, S. S. Shinde, A.V. Moholkar, C. H. Bhosale, J. H. Kim, K. Y. Rajpure

  J. Semicond.  2011, 32(5): 053001
  doi: 10.1088/1674-4926/32/5/053001

  Effects of vacancy structural defects on the thermal conductivity of silicon thin films

  Zhang Xingli, Sun Zhaowei

  J. Semicond.  2011, 32(5): 053002
  doi: 10.1088/1674-4926/32/5/053002

  Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition

  Li Ran, Huang Hui, Ren Xiaomin, Guo Jingwei, Liu Xiaolong, Huang Yongqing, Cai Shiwei

  J. Semicond.  2011, 32(5): 053003
  doi: 10.1088/1674-4926/32/5/053003

  Characteristics of CdTe nanocrystals synthesized by a Na₂TeO₃ source

  Wang Meiping, Fu Kai, Lin Jinhui

  J. Semicond.  2011, 32(5): 053004
  doi: 10.1088/1674-4926/32/5/053004

  Material properties and effective work function of reactive sputtered TaN gate electrodes

  Zhang Manhong, Huo Zongliang, Wang Qin, Liu Ming

  J. Semicond.  2011, 32(5): 053005
  doi: 10.1088/1674-4926/32/5/053005

• SEMICONDUCTOR DEVICES

  SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

  Amit Chaudhry, J. N. Roy, S. Sangwan

  J. Semicond.  2011, 32(5): 054001
  doi: 10.1088/1674-4926/32/5/054001

  Characterization Analysis of UDSM LVTSCR Under TLP Stress

  Li Li, Liu Hongxia, Dong Cui, Zhou Wen

  J. Semicond.  2011, 32(5): 054002
  doi: 10.1088/1674-4926/32/5/054002

  An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings

  Chen Lei, Du Huan

  J. Semicond.  2011, 32(5): 054003
  doi: 10.1088/1674-4926/32/5/054003

  PDSOI DTMOS for analog and RF application

  Wang Yiqi, Liu Mengxin, Bi Jinshun, Han Zhengsheng

  J. Semicond.  2011, 32(5): 054004
  doi: 10.1088/1674-4926/32/5/054004

  A physical-based pMOSFETs threshold voltage model including the STI stress effect

  Wu Wei, Du Gang, Liu Xiaoyan, Sun Lei, Kang Jinfeng, Han Ruqi

  J. Semicond.  2011, 32(5): 054005
  doi: 10.1088/1674-4926/32/5/054005

  A highly linear fully integrated CMOS power amplifier with an analog predistortion technique

  Jin Boshi, Li Lewei, Wu Qun, Yang Guohui, Zhang Kuang

  J. Semicond.  2011, 32(5): 054006
  doi: 10.1088/1674-4926/32/5/054006

  A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

  Lai Weijiang, Cheng Yuanbing, Yao Chen, Zhou Daibing, Bian Jing, Zhao Lingjuan, Wu Jian

  J. Semicond.  2011, 32(5): 054007
  doi: 10.1088/1674-4926/32/5/054007

  Novel closed-form resistance formulae for rectangular interconnects

  Chen Baojun, Tang Zhen'an, Yu Tiejun

  J. Semicond.  2011, 32(5): 054008
  doi: 10.1088/1674-4926/32/5/054008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Design and implementation of an IEEE 802.11 baseband OFDM transceiver in 0.18 μm CMOS

  Wu Bin, Zhou Yumei, Zhu Yongxu, Zhang Zhengdong, Cai Jingjing

  J. Semicond.  2011, 32(5): 055001
  doi: 10.1088/1674-4926/32/5/055001

  A CMOS G_m–C complex filter with on-chip automatic tuning for wireless sensor network application

  Wan Chuanchuan, Li Zhiqun, Hou Ningbing

  J. Semicond.  2011, 32(5): 055002
  doi: 10.1088/1674-4926/32/5/055002

  A micromachined inline type microwave power sensor with working state transfer switches

  Han Lei

  J. Semicond.  2011, 32(5): 055003
  doi: 10.1088/1674-4926/32/5/055003

  A dual-mode 6–9 GHz transmitter for OFDM-UWB

  Chen Yunfeng, Gao Ting, Li Wei, Li Ning, Ren Junyan

  J. Semicond.  2011, 32(5): 055004
  doi: 10.1088/1674-4926/32/5/055004

  A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

  Chen Lei, Ruan Ying, Su Jie, Zhang Shulin, Shi Chunqi, Lai Zongsheng

  J. Semicond.  2011, 32(5): 055005
  doi: 10.1088/1674-4926/32/5/055005

  Analysis and design of a 1.8–2.7 GHz tunable 8-band TDD LTE receiver front-end

  Wang Xiao, Wang Yuji, Wang Weiwei, Chang Xuegui, Yan Na, Tan Xi, Min Hao

  J. Semicond.  2011, 32(5): 055006
  doi: 10.1088/1674-4926/32/5/055006

  High-precision high-sensitivity clock recovery circuit for a mobile payment application

  Sun Lichong, Ren Wenliang, Yan Na, Min Hao

  J. Semicond.  2011, 32(5): 055007
  doi: 10.1088/1674-4926/32/5/055007

  A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs

  Wang Zhongming, Yao Zhibin, Guo Hongxia, Lü Min

  J. Semicond.  2011, 32(5): 055008
  doi: 10.1088/1674-4926/32/5/055008

  Design of a passive UHF RFID tag for the ISO18000-6C protocol

  Wang Yao, Wen Guangjun, Mao Wei, He Yanli, Zhu Xueyong

  J. Semicond.  2011, 32(5): 055009
  doi: 10.1088/1674-4926/32/5/055009

  Effects of pattern characteristics on the copper electroplating process

  Ruan Wenbiao, Chen Lan, Li Zhigang, Ye Tianchun, Ma Tianyu, Wang Qiang

  J. Semicond.  2011, 32(5): 055010
  doi: 10.1088/1674-4926/32/5/055010

  Finite element simulation of hydrostatic stress in copper interconnects

  Yuan Guangjie, Chen Leng

  J. Semicond.  2011, 32(5): 055011
  doi: 10.1088/1674-4926/32/5/055011

  A new FPGA architecture suitable for DSP applications

  Wang Liyun, Lai Jinmei, Tong Jiarong, Tang Pushan, Chen Xing, Duan Xueyan, Chen Liguang, Wang Jian, Wang Yuan

  J. Semicond.  2011, 32(5): 055012
  doi: 10.1088/1674-4926/32/5/055012

• SEMICONDUCTOR TECHNOLOGY

  Cleaning method of InSb [-1-1-1] B of n-InSb [111] A/B for growth of epitaxial layers by liquid phase epitaxy

  Gh. Sareminia, F. Zahedi, Sh. Eminov, Ar. Karamian

  J. Semicond.  2011, 32(5): 056001
  doi: 10.1088/1674-4926/32/5/056001

  Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

  Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun, Wang Wenjing

  J. Semicond.  2011, 32(5): 056002
  doi: 10.1088/1674-4926/32/5/056002

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