J. Semicond. 2011, 32(5): 052001
doi: 10.1088/1674-4926/32/5/052001
Annealing optimization of hydrogenated amorphous silicon suboxide film for solar cell application
J. Semicond. 2011, 32(5): 052002
doi: 10.1088/1674-4926/32/5/052002
Physical properties of sprayed antimony doped tin oxide thin films: Role of thickness
J. Semicond. 2011, 32(5): 053001
doi: 10.1088/1674-4926/32/5/053001
Effects of vacancy structural defects on the thermal conductivity of silicon thin films
J. Semicond. 2011, 32(5): 053002
doi: 10.1088/1674-4926/32/5/053002
Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
J. Semicond. 2011, 32(5): 053003
doi: 10.1088/1674-4926/32/5/053003
Characteristics of CdTe nanocrystals synthesized by a Na2TeO3 source
J. Semicond. 2011, 32(5): 053004
doi: 10.1088/1674-4926/32/5/053004
Material properties and effective work function of reactive sputtered TaN gate electrodes
J. Semicond. 2011, 32(5): 053005
doi: 10.1088/1674-4926/32/5/053005
SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs
J. Semicond. 2011, 32(5): 054001
doi: 10.1088/1674-4926/32/5/054001
Characterization Analysis of UDSM LVTSCR Under TLP Stress
J. Semicond. 2011, 32(5): 054002
doi: 10.1088/1674-4926/32/5/054002
An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings
J. Semicond. 2011, 32(5): 054003
doi: 10.1088/1674-4926/32/5/054003
PDSOI DTMOS for analog and RF application
J. Semicond. 2011, 32(5): 054004
doi: 10.1088/1674-4926/32/5/054004
A physical-based pMOSFETs threshold voltage model including the STI stress effect
J. Semicond. 2011, 32(5): 054005
doi: 10.1088/1674-4926/32/5/054005
A highly linear fully integrated CMOS power amplifier with an analog predistortion technique
J. Semicond. 2011, 32(5): 054006
doi: 10.1088/1674-4926/32/5/054006
A high-power tapered and cascaded active multimode interferometer semiconductor laser diode
J. Semicond. 2011, 32(5): 054007
doi: 10.1088/1674-4926/32/5/054007
Novel closed-form resistance formulae for rectangular interconnects
J. Semicond. 2011, 32(5): 054008
doi: 10.1088/1674-4926/32/5/054008
Design and implementation of an IEEE 802.11 baseband OFDM transceiver in 0.18 μm CMOS
J. Semicond. 2011, 32(5): 055001
doi: 10.1088/1674-4926/32/5/055001
A CMOS Gm–C complex filter with on-chip automatic tuning for wireless sensor network application
J. Semicond. 2011, 32(5): 055002
doi: 10.1088/1674-4926/32/5/055002
A micromachined inline type microwave power sensor with working state transfer switches
J. Semicond. 2011, 32(5): 055003
doi: 10.1088/1674-4926/32/5/055003
A dual-mode 6–9 GHz transmitter for OFDM-UWB
J. Semicond. 2011, 32(5): 055004
doi: 10.1088/1674-4926/32/5/055004
A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design
J. Semicond. 2011, 32(5): 055005
doi: 10.1088/1674-4926/32/5/055005
Analysis and design of a 1.8–2.7 GHz tunable 8-band TDD LTE receiver front-end
J. Semicond. 2011, 32(5): 055006
doi: 10.1088/1674-4926/32/5/055006
High-precision high-sensitivity clock recovery circuit for a mobile payment application
J. Semicond. 2011, 32(5): 055007
doi: 10.1088/1674-4926/32/5/055007
J. Semicond. 2011, 32(5): 055008
doi: 10.1088/1674-4926/32/5/055008
Design of a passive UHF RFID tag for the ISO18000-6C protocol
J. Semicond. 2011, 32(5): 055009
doi: 10.1088/1674-4926/32/5/055009
Effects of pattern characteristics on the copper electroplating process
J. Semicond. 2011, 32(5): 055010
doi: 10.1088/1674-4926/32/5/055010
Finite element simulation of hydrostatic stress in copper interconnects
J. Semicond. 2011, 32(5): 055011
doi: 10.1088/1674-4926/32/5/055011
A new FPGA architecture suitable for DSP applications
J. Semicond. 2011, 32(5): 055012
doi: 10.1088/1674-4926/32/5/055012
J. Semicond. 2011, 32(5): 056001
doi: 10.1088/1674-4926/32/5/056001
J. Semicond. 2011, 32(5): 056002
doi: 10.1088/1674-4926/32/5/056002