Archive

Volume 33, Issue 11, Nov 2012

• SEMICONDUCTOR PHYSICS

  Compositional dependence of Raman frequencies in Si_xGe_1-x alloys

  Zheng Wenli, Li Tinghui

  J. Semicond.  2012, 33(11): 112001
  doi: 10.1088/1674-4926/33/11/112001

  The chemisorption of Mg on the Si (100)-(2 × 1) surface

  Zhang Fang, Li Wei, Wei Shuyi

  J. Semicond.  2012, 33(11): 112002
  doi: 10.1088/1674-4926/33/11/112002

  Acetic acid gas sensors based on Ni²⁺ doped ZnO nanorods prepared by using the solvothermal method

  Cheng Zhiming, Zhou Sumei, Chen Tongyun, Dong Yongping, Zhang Wangbing, Chu Xiangfeng

  J. Semicond.  2012, 33(11): 112003
  doi: 10.1088/1674-4926/33/11/112003

• SEMICONDUCTOR MATERIALS

  Characterization of electrical properties of AlGaN/GaN interface using coupled Schrödinger and Poisson equation

  S. Das, A. K. Panda, G. N. Dash

  J. Semicond.  2012, 33(11): 113001
  doi: 10.1088/1674-4926/33/11/113001

  Low threading dislocation density in GaN films grown on patterned sapphire substrates

  Liang Meng, Wang Guohong, Li Hongjan, Li Zhicong, Yao Ran, Wang Bing, Li Panpan, Li Jing, Yi Xiaoyan, Wang Junxi, Li Jinmin

  J. Semicond.  2012, 33(11): 113002
  doi: 10.1088/1674-4926/33/11/113002

  Preparation and properties of polycrystalline silicon seed layers on graphite substrate

  Li Ning, Chen Nuofu, Bai Yiming, He Haiyang

  J. Semicond.  2012, 33(11): 113003
  doi: 10.1088/1674-4926/33/11/113003

  Preparation of rare-earth element doped Mg₂Si by FAPAS

  Wang Liqi, Meng Qingsen, Fan Wenhao

  J. Semicond.  2012, 33(11): 113004
  doi: 10.1088/1674-4926/33/11/113004

• SEMICONDUCTOR DEVICES

  Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

  Dai Zhenqing, Zhang Liying, Chen Changxin, Qian Bingjian, Xu Dong, Chen Haiyan, Wei Liangming, Zhang Yafei

  J. Semicond.  2012, 33(11): 114001
  doi: 10.1088/1674-4926/33/11/114001

  A simulation study on a novel trench SJ IGBT

  Wang Bo, Tan Jingfei, Zhang Wenliang, Chu Weili, Zhu Yangjun

  J. Semicond.  2012, 33(11): 114002
  doi: 10.1088/1674-4926/33/11/114002

  A new short-anoded IGBT with high emission efficiency

  Chen Weizhong, Zhang Bo, Li Zehong, Ren Min, Li Zhaoji

  J. Semicond.  2012, 33(11): 114003
  doi: 10.1088/1674-4926/33/11/114003

  A SPICE model for a phase-change memory cell based on the analytical conductivity model

  Wei Yiqun, Lin Xinnan, Jia Yuchao, Cui Xiaole, He Jin, Zhang Xing

  J. Semicond.  2012, 33(11): 114004
  doi: 10.1088/1674-4926/33/11/114004

  12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator

  Chen Hongtao, Ding Jianfeng, Yang Lin

  J. Semicond.  2012, 33(11): 114005
  doi: 10.1088/1674-4926/33/11/114005

• SEMICONDUCTOR INTEGRATED CIRCUITS

  CMOS analog baseband circuitry for an IEEE 802.11 b/g/n WLAN transceiver

  Gong Zheng, Chu Xiaojie, Lei Qianqian, Lin Min, Shi Yin

  J. Semicond.  2012, 33(11): 115001
  doi: 10.1088/1674-4926/33/11/115001

  Design of low noise class D amplifiers using an integrated filter

  Wang Haishi, Zhang Bo

  J. Semicond.  2012, 33(11): 115002
  doi: 10.1088/1674-4926/33/11/115002

  Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

  Xu Xinnan, Yao Suying, Xu Jiangtao, Nie Kaiming

  J. Semicond.  2012, 33(11): 115003
  doi: 10.1088/1674-4926/33/11/115003

  Pulse swallowing frequency divider with low power and compact structure

  Gao Haijun, Sun Lingling, Cai Chaobo, Zhan Haiting

  J. Semicond.  2012, 33(11): 115004
  doi: 10.1088/1674-4926/33/11/115004

  Design of a dual-channel multi-mode GNSS receiver with a ΣΔ fractional-N synthesizer

  Long Qiang, Zhuang Yiqi, Yin Yue, Li Le, Wang Jin, Li Zhenrong, Liu Qiankun, Wang Lei

  J. Semicond.  2012, 33(11): 115005
  doi: 10.1088/1674-4926/33/11/115005

  A programmable gain amplifier with digitally assisted DC offset calibration for a direct-conversion WLAN receiver

  Yao Xiaocheng, Gong Zheng, Shi Yin

  J. Semicond.  2012, 33(11): 115006
  doi: 10.1088/1674-4926/33/11/115006

  Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes

  Yao Changfei, Zhou Ming, Luo Yunsheng, Wang Yigang, Xu Conghai

  J. Semicond.  2012, 33(11): 115007
  doi: 10.1088/1674-4926/33/11/115007

  Design of ternary low-power Domino JKL flip-flop and its application

  Wang Pengjun, Yang Qiankun, Zheng Xuesong

  J. Semicond.  2012, 33(11): 115008
  doi: 10.1088/1674-4926/33/11/115008

  An embeddable SOC real-time prediction technology for TDDB

  Xin Weiping, Zhuang Yiqi, Li Xiaoming

  J. Semicond.  2012, 33(11): 115009
  doi: 10.1088/1674-4926/33/11/115009

  A digital background calibration algorithm of a pipeline ADC based on output code calculation

  Shao Jianjian, Li Weitao, Sun Cao, Li Fule, Zhang Chun, Wang Zhihua

  J. Semicond.  2012, 33(11): 115010
  doi: 10.1088/1674-4926/33/11/115010

  Design and implementation of an ultra-low power passive UHF RFID tag

  Shen Jinpeng, Wang Xin’an, Liu Shan, Zong Hongqiang, Huang Jinfeng, Yang Xin, Feng Xiaoxing, Ge Binjie

  J. Semicond.  2012, 33(11): 115011
  doi: 10.1088/1674-4926/33/11/115011

  A micro-power LDO with piecewise voltage foldback current limit protection

  Wei Hailong, Liu Youbao, Guo Zhongjie, Liao Xue

  J. Semicond.  2012, 33(11): 115012
  doi: 10.1088/1674-4926/33/11/115012

  A 1.8 V low-power 14-bit 20 Msps ADC with 11.2 ENOB

  Cai Hua

  J. Semicond.  2012, 33(11): 115013
  doi: 10.1088/1674-4926/33/11/115013

• SEMICONDUCTOR TECHNOLOGY

  Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP

  Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan, Yue Hongwei

  J. Semicond.  2012, 33(11): 116001
  doi: 10.1088/1674-4926/33/11/116001

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