Compositional dependence of Raman frequencies in SixGe1-x alloys
J. Semicond. 2012, 33(11): 112001
doi: 10.1088/1674-4926/33/11/112001
The chemisorption of Mg on the Si (100)-(2 × 1) surface
J. Semicond. 2012, 33(11): 112002
doi: 10.1088/1674-4926/33/11/112002
Acetic acid gas sensors based on Ni2+ doped ZnO nanorods prepared by using the solvothermal method
J. Semicond. 2012, 33(11): 112003
doi: 10.1088/1674-4926/33/11/112003
J. Semicond. 2012, 33(11): 113001
doi: 10.1088/1674-4926/33/11/113001
Low threading dislocation density in GaN films grown on patterned sapphire substrates
J. Semicond. 2012, 33(11): 113002
doi: 10.1088/1674-4926/33/11/113002
Preparation and properties of polycrystalline silicon seed layers on graphite substrate
J. Semicond. 2012, 33(11): 113003
doi: 10.1088/1674-4926/33/11/113003
Preparation of rare-earth element doped Mg2Si by FAPAS
J. Semicond. 2012, 33(11): 113004
doi: 10.1088/1674-4926/33/11/113004
Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
J. Semicond. 2012, 33(11): 114001
doi: 10.1088/1674-4926/33/11/114001
A simulation study on a novel trench SJ IGBT
J. Semicond. 2012, 33(11): 114002
doi: 10.1088/1674-4926/33/11/114002
A new short-anoded IGBT with high emission efficiency
J. Semicond. 2012, 33(11): 114003
doi: 10.1088/1674-4926/33/11/114003
A SPICE model for a phase-change memory cell based on the analytical conductivity model
J. Semicond. 2012, 33(11): 114004
doi: 10.1088/1674-4926/33/11/114004
12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator
J. Semicond. 2012, 33(11): 114005
doi: 10.1088/1674-4926/33/11/114005
CMOS analog baseband circuitry for an IEEE 802.11 b/g/n WLAN transceiver
J. Semicond. 2012, 33(11): 115001
doi: 10.1088/1674-4926/33/11/115001
Design of low noise class D amplifiers using an integrated filter
J. Semicond. 2012, 33(11): 115002
doi: 10.1088/1674-4926/33/11/115002
J. Semicond. 2012, 33(11): 115003
doi: 10.1088/1674-4926/33/11/115003
Pulse swallowing frequency divider with low power and compact structure
J. Semicond. 2012, 33(11): 115004
doi: 10.1088/1674-4926/33/11/115004
Design of a dual-channel multi-mode GNSS receiver with a ΣΔ fractional-N synthesizer
J. Semicond. 2012, 33(11): 115005
doi: 10.1088/1674-4926/33/11/115005
J. Semicond. 2012, 33(11): 115006
doi: 10.1088/1674-4926/33/11/115006
Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes
J. Semicond. 2012, 33(11): 115007
doi: 10.1088/1674-4926/33/11/115007
Design of ternary low-power Domino JKL flip-flop and its application
J. Semicond. 2012, 33(11): 115008
doi: 10.1088/1674-4926/33/11/115008
An embeddable SOC real-time prediction technology for TDDB
J. Semicond. 2012, 33(11): 115009
doi: 10.1088/1674-4926/33/11/115009
A digital background calibration algorithm of a pipeline ADC based on output code calculation
J. Semicond. 2012, 33(11): 115010
doi: 10.1088/1674-4926/33/11/115010
Design and implementation of an ultra-low power passive UHF RFID tag
J. Semicond. 2012, 33(11): 115011
doi: 10.1088/1674-4926/33/11/115011
A micro-power LDO with piecewise voltage foldback current limit protection
J. Semicond. 2012, 33(11): 115012
doi: 10.1088/1674-4926/33/11/115012
A 1.8 V low-power 14-bit 20 Msps ADC with 11.2 ENOB
J. Semicond. 2012, 33(11): 115013
doi: 10.1088/1674-4926/33/11/115013
Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP
J. Semicond. 2012, 33(11): 116001
doi: 10.1088/1674-4926/33/11/116001