Archive

Volume 33, Issue 5, May 2012

• SEMICONDUCTOR PHYSICS

  Electron Raman scattering in a cylindrical quantum dot

  Zhong Qinghu, Yi Xuehua

  J. Semicond.  2012, 33(5): 052001
  doi: 10.1088/1674-4926/33/5/052001

  Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure

  Zheng Dongmei, Wang Zongchi, Xiao Boqi

  J. Semicond.  2012, 33(5): 052002
  doi: 10.1088/1674-4926/33/5/052002

• SEMICONDUCTOR MATERIALS

  Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency

  Guo Hongying, Sun Yuanping, Yong-Hoon Cho, Eun-Kyung Suh, Hai-Joon Lee, Rak-Jun Choi, Yoon-Bong Hahn

  J. Semicond.  2012, 33(5): 053001
  doi: 10.1088/1674-4926/33/5/053001

  Electrical and γ-ray energy spectrum response properties of PbI₂ crystal grown by physical vapor transport

  Sun Hui, Zhu Xinghua, Yang Dingyu, He Zhiyu, Zhu Shifu, Zhao Beijun

  J. Semicond.  2012, 33(5): 053002
  doi: 10.1088/1674-4926/33/5/053002

  Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

  Huang Kai, Lü Jianguo, Zhang Li, Tang Zhen, Yu Jiangying, Li Ping, Liu Feng

  J. Semicond.  2012, 33(5): 053003
  doi: 10.1088/1674-4926/33/5/053003

  Improved field emission properties of carbon nanotube cathodes by nickel electroplating and corrosion

  Xiao Xiaojing, Ye Yun, Zheng Longwu, Guo Tailiang

  J. Semicond.  2012, 33(5): 053004
  doi: 10.1088/1674-4926/33/5/053004

• SEMICONDUCTOR DEVICES

  GaN based transfer electron and avalanche transit time devices

  R. K. Parida, A. K. Panda

  J. Semicond.  2012, 33(5): 054001
  doi: 10.1088/1674-4926/33/5/054001

  Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect

  Gourab Dutta, Sukla Basu

  J. Semicond.  2012, 33(5): 054002
  doi: 10.1088/1674-4926/33/5/054002

  A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

  Wang Zhongjian, Cheng Xinhong, Xia Chao, Xu Dawei, Cao Duo, Song Zhaorui, Yu Yuehui, Shen Dashen

  J. Semicond.  2012, 33(5): 054003
  doi: 10.1088/1674-4926/33/5/054003

  Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

  Li Qi, Wang Weidong, Zhao Qiuming, Wei Xueming

  J. Semicond.  2012, 33(5): 054004
  doi: 10.1088/1674-4926/33/5/054004

  Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

  Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun, Feng Zhihong

  J. Semicond.  2012, 33(5): 054005
  doi: 10.1088/1674-4926/33/5/054005

  Novel SOI double-gate MOSFET with a P-type buried layer

  Yao Guoliang, Luo Xiaorong, Wang Qi, Jiang Yongheng, Wang Pei, Zhou Kun, Wu Lijuan, Zhang Bo, Li Zhaoji

  J. Semicond.  2012, 33(5): 054006
  doi: 10.1088/1674-4926/33/5/054006

  Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

  Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu

  J. Semicond.  2012, 33(5): 054007
  doi: 10.1088/1674-4926/33/5/054007

  Simulation of the sensitive region to SEGR in power MOSFETs

  Wang Lixin, Lu Jiang, Liu Gang, Wang Chunlin, Teng Rui, Han Zhengsheng, Xia Yang

  J. Semicond.  2012, 33(5): 054008
  doi: 10.1088/1674-4926/33/5/054008

  Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters

  Zheng Huaiwen, Zhang Yiyun, Yang Hua, Xue Bin, Wu Kui, Li Jing, Wang Guohong

  J. Semicond.  2012, 33(5): 054009
  doi: 10.1088/1674-4926/33/5/054009

  Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes

  Chen Bin, Yang Yintang, Chai Changchun, Wang Ning, Ma Zhenyang, Xie Xuanrong

  J. Semicond.  2012, 33(5): 054010
  doi: 10.1088/1674-4926/33/5/054010

  Resistive switching characteristics of Ni/HfO₂/Pt ReRAM

  Zhang Xiao

  J. Semicond.  2012, 33(5): 054011
  doi: 10.1088/1674-4926/33/5/054011

  Nano-WO₃ film modified macro-porous silicon (MPS) gas sensor

  Sun Peng, Hu Ming, Li Mingda, Ma Shuangyun

  J. Semicond.  2012, 33(5): 054012
  doi: 10.1088/1674-4926/33/5/054012

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Gate leakage current reduction in IP3 SRAM cells at 45 nm CMOS technology for multimedia applications

  R. K. Singh, Neeraj Kr. Shukla, Manisha Pattanaik

  J. Semicond.  2012, 33(5): 055001
  doi: 10.1088/1674-4926/33/5/055001

  A low-phase-noise LC-VCO with an enhanced-Q varactor for use in a high-sensitivity GNSS receiver

  Yin Xizhen, Ma Chengyan, Ye Tianchun, Xiao Shimao, Jin Yuhua

  J. Semicond.  2012, 33(5): 055002
  doi: 10.1088/1674-4926/33/5/055002

  Design of a CMOS multi-mode GNSS receiver VCO

  Long Qiang, Zhuang Yiqi, Yin Yue, Li Zhenrong

  J. Semicond.  2012, 33(5): 055003
  doi: 10.1088/1674-4926/33/5/055003

  A 12-bit, 40-Ms/s pipelined ADC with an improved operational amplifier

  Wang Yu, Yang Haigang, Yin Tao, Liu Fei

  J. Semicond.  2012, 33(5): 055004
  doi: 10.1088/1674-4926/33/5/055004

  CMOS implementation of a low-power BPSK demodulator for wireless implantable neural command transmission

  Wu Zhaohui, Zhang Xu, Liang Zhiming, Li Bin

  J. Semicond.  2012, 33(5): 055005
  doi: 10.1088/1674-4926/33/5/055005

  A low power flexible PGA for software defined radio systems

  Li Guofeng, Wu Nanjian

  J. Semicond.  2012, 33(5): 055006
  doi: 10.1088/1674-4926/33/5/055006

  A new equivalent circuit model for on-chip spiral transformers in CMOS RFICs

  Wei Jiaju, Wang Zhigong, Li Zhiqun, Tang Lu

  J. Semicond.  2012, 33(5): 055007
  doi: 10.1088/1674-4926/33/5/055007

• SEMICONDUCTOR TECHNOLOGY

  Failure mechanisms and assembly-process-based solution of FCBGA high lead C4 bump non-wetting

  Li Wenqi, Qiu Yiming, Jin Xing, Wang Lei, Wu Qidi

  J. Semicond.  2012, 33(5): 056001
  doi: 10.1088/1674-4926/33/5/056001

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