Electron Raman scattering in a cylindrical quantum dot
J. Semicond. 2012, 33(5): 052001
doi: 10.1088/1674-4926/33/5/052001
J. Semicond. 2012, 33(5): 052002
doi: 10.1088/1674-4926/33/5/052002
J. Semicond. 2012, 33(5): 053001
doi: 10.1088/1674-4926/33/5/053001
J. Semicond. 2012, 33(5): 053002
doi: 10.1088/1674-4926/33/5/053002
Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films
J. Semicond. 2012, 33(5): 053003
doi: 10.1088/1674-4926/33/5/053003
J. Semicond. 2012, 33(5): 053004
doi: 10.1088/1674-4926/33/5/053004
GaN based transfer electron and avalanche transit time devices
J. Semicond. 2012, 33(5): 054001
doi: 10.1088/1674-4926/33/5/054001
Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect
J. Semicond. 2012, 33(5): 054002
doi: 10.1088/1674-4926/33/5/054002
A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
J. Semicond. 2012, 33(5): 054003
doi: 10.1088/1674-4926/33/5/054003
Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure
J. Semicond. 2012, 33(5): 054004
doi: 10.1088/1674-4926/33/5/054004
J. Semicond. 2012, 33(5): 054005
doi: 10.1088/1674-4926/33/5/054005
Novel SOI double-gate MOSFET with a P-type buried layer
J. Semicond. 2012, 33(5): 054006
doi: 10.1088/1674-4926/33/5/054006
J. Semicond. 2012, 33(5): 054007
doi: 10.1088/1674-4926/33/5/054007
Simulation of the sensitive region to SEGR in power MOSFETs
J. Semicond. 2012, 33(5): 054008
doi: 10.1088/1674-4926/33/5/054008
Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters
J. Semicond. 2012, 33(5): 054009
doi: 10.1088/1674-4926/33/5/054009
J. Semicond. 2012, 33(5): 054010
doi: 10.1088/1674-4926/33/5/054010
Resistive switching characteristics of Ni/HfO2/Pt ReRAM
J. Semicond. 2012, 33(5): 054011
doi: 10.1088/1674-4926/33/5/054011
Nano-WO3 film modified macro-porous silicon (MPS) gas sensor
J. Semicond. 2012, 33(5): 054012
doi: 10.1088/1674-4926/33/5/054012
J. Semicond. 2012, 33(5): 055001
doi: 10.1088/1674-4926/33/5/055001
A low-phase-noise LC-VCO with an enhanced-Q varactor for use in a high-sensitivity GNSS receiver
J. Semicond. 2012, 33(5): 055002
doi: 10.1088/1674-4926/33/5/055002
Design of a CMOS multi-mode GNSS receiver VCO
J. Semicond. 2012, 33(5): 055003
doi: 10.1088/1674-4926/33/5/055003
A 12-bit, 40-Ms/s pipelined ADC with an improved operational amplifier
J. Semicond. 2012, 33(5): 055004
doi: 10.1088/1674-4926/33/5/055004
J. Semicond. 2012, 33(5): 055005
doi: 10.1088/1674-4926/33/5/055005
A low power flexible PGA for software defined radio systems
J. Semicond. 2012, 33(5): 055006
doi: 10.1088/1674-4926/33/5/055006
A new equivalent circuit model for on-chip spiral transformers in CMOS RFICs
J. Semicond. 2012, 33(5): 055007
doi: 10.1088/1674-4926/33/5/055007
Failure mechanisms and assembly-process-based solution of FCBGA high lead C4 bump non-wetting
J. Semicond. 2012, 33(5): 056001
doi: 10.1088/1674-4926/33/5/056001